Understanding the Reaction Kinetics to Optimize Graphene Growth on Cu by Chemical Vapor Deposition

2017 ◽  
Vol 529 (11) ◽  
pp. 1700029 ◽  
Author(s):  
Jürgen Kraus ◽  
Lena Böbel ◽  
Gregor Zwaschka ◽  
Sebastian Günther
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Graphene Growth

Effect of Cu surface treatment in graphene growth by chemical vapor deposition

2019 ◽  
Vol 236 ◽  
pp. 403-407 ◽  
Author(s):  
Seong-Yong Cho ◽  
Minsu Kim ◽  
Min-Sik Kim ◽  
Min-Hyun Lee ◽  
Ki-Bum Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Treatment ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Graphene Growth

Effects of Process Parameters on Graphene Growth Via Low-Pressure Chemical Vapor Deposition

2020 ◽  
Vol 8 (3) ◽  
Author(s):  
Byoungdo Lee ◽  
Weishen Chu ◽  
Wei Li
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
Low Pressure ◽  
Large Set ◽  
Graphene Growth ◽  
Pressure Chemical

Abstract Graphene has attracted enormous research interest due to its extraordinary material properties. Process control to achieve high-quality graphene is indispensable for graphene-based applications. This research investigates the effects of process parameters on graphene quality in a low-pressure chemical vapor deposition (LPCVD) graphene growth process. A fractional factorial design of experiment is conducted to provide understanding on not only the main effect of process parameters, but also the interaction effect among them. Graphene quality including the number of layers and grain size is analyzed. To achieve monolayer graphene with large grain size, a condition with low CH4–H2 ratio, short growth time, high growth pressure, high growth temperature, and slow cooling rate is recommended. This study considers a large set of process parameters with their interaction effects and provides guidelines to optimize graphene growth via LPCVD focusing on the number of graphene layers and the grain size.

The growth modes of graphene in the initial stage of a chemical vapor-deposition process

RSC Advances ◽  
2016 ◽  
Vol 6 (94) ◽  
pp. 91157-91162 ◽  
Author(s):  
Zhaoming Fu ◽  
Yipeng An
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Graphene Growth ◽  
Carbon Chains ◽  
Growth Modes ◽  
Initial Stage ◽  
Vapor Deposition Process

The different growth modes of carbon chains and carbon islands in the initial stage of graphene growth.

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

2013 ◽  
Vol 113 (20) ◽  
pp. 203501 ◽  
Author(s):  
A. Michon ◽  
S. Vézian ◽  
E. Roudon ◽  
D. Lefebvre ◽  
M. Zielinski ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Graphene Growth

Reaction Kinetics of Epitaxial Silicon Deposition at 220-400°C Using Remote Plasma-Enhanced Chemical Vapor Deposition

1989 ◽  
Vol 165 ◽  
Author(s):  
B. Anthony ◽  
T. Hsu ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Inert Carrier ◽  
Substrate Temperatures ◽  
Kinetics Of

AbstractIn this paper the reaction kinetics of Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) are investigated. Growth rate characterization has been performed for substrate temperatures of 220 – 400°C, r-f powers from 4 – 8 W, and silane flow rates of 10 – 30 sccm. Growth rate has been found to increase exponentially with r-f power, which is, as yet, unexplained. An approximate square root dependence of growth rate on silane partial pressure agrees with the theory of Claasen et. Al for Chemical Vapor Deposition (CVD) of silicon from silane with an inert carrier gas. From an Arrhenius plot of the temperature dependence of growth rate, we note a change of slope at ∼300°C which we have attributed to the behavior of hydrogen at the silicon surface.

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