Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

2019 ◽  
Vol 5 (5) ◽  
pp. 1800832 ◽  
Author(s):  
Meiyong Liao ◽  
Liwen Sang ◽  
Takehiro Shimaoka ◽  
Masataka Imura ◽  
Satoshi Koizumi ◽  
...  
Keyword(s):  
Energy Efficient ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Carrier Gases

scholarly journals A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Dominique Drouin ◽  
Gabriel Droulers ◽  
Marina Labalette ◽  
Bruno Lee Sang ◽  
Patrick Harvey-Collard ◽  
...  
Keyword(s):  
Field Effect ◽  
Tunnel Junctions ◽  
Field Effect Transistors ◽  
3D Integration ◽  
Single Electron Transistors ◽  
Metal Insulator ◽  
Nanoelectronic Devices ◽  
Metal Insulator Metal ◽  
Oxide Tunnel ◽  
Electron Transistors

We present a versatile nanodamascene process for the realization of low-power nanoelectronic devices with different oxide junctions. With this process we have fabricated metal/insulator/metal junctions, metallic single electron transistors, silicon tunnel field effect transistors, and planar resistive memories. These devices do exploit one or two nanometric-scale tunnel oxide junctions based on TiO2, SiO2, HfO2, Al2O3, or a combination of those. Because the nanodamascene technology involves processing temperatures lower than 300°C, this technology is fully compatible with CMOS back-end-of-line and is used for monolithic 3D integration.

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

2010 ◽  
Vol 97 (25) ◽  
pp. 253502 ◽  
Author(s):  
Yuji Urabe ◽  
Masafumi Yokoyama ◽  
Hideki Takagi ◽  
Tetsuji Yasuda ◽  
Noriyuki Miyata ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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