2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification

Geonyeop Lee; Stephen J. Pearton; Fan Ren; Jihyun Kim

doi:10.1002/aelm.201800745

2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification

Advanced Electronic Materials ◽

10.1002/aelm.201800745 ◽

2018 ◽

Vol 5 (3) ◽

pp. 1800745 ◽

Cited By ~ 10

Author(s):

Geonyeop Lee ◽

Stephen J. Pearton ◽

Fan Ren ◽

Jihyun Kim

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

High Current ◽

2D Material ◽

Double Heterojunction ◽

Current Amplification

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Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019)

Advanced Electronic Materials ◽

10.1002/aelm.201970015 ◽

2019 ◽

Vol 5 (3) ◽

pp. 1970015

Author(s):

Geonyeop Lee ◽

Stephen J. Pearton ◽

Fan Ren ◽

Jihyun Kim

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

High Current ◽

2D Material ◽

Double Heterojunction ◽

Current Amplification

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High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

Applied Physics Letters ◽

10.1063/1.1597989 ◽

2003 ◽

Vol 83 (5) ◽

pp. 1035-1037 ◽

Cited By ~ 35

Author(s):

Toshiki Makimoto ◽

Kazuhide Kumakura ◽

Naoki Kobayashi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Double Heterojunction

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Molecular beam epitaxial double heterojunction bipolar transistors with high current gains

Electronics Letters ◽

10.1049/el:19830090 ◽

1983 ◽

Vol 19 (4) ◽

pp. 128 ◽

Cited By ~ 4

Author(s):

S.L. Su ◽

W.G. Lyons ◽

O. Tejayadi ◽

R. Fischer ◽

W. Kopp ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

High Current ◽

Molecular Beam Epitaxial ◽

Double Heterojunction

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High current gain (<2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226854 ◽

2004 ◽

Author(s):

T. Makimoto ◽

K. Kumakura ◽

N. Kobayashi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Offset Voltage ◽

Double Heterojunction

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High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2064316 ◽

2010 ◽

Vol 57 (11) ◽

pp. 2964-2969 ◽

Cited By ~ 20

Author(s):

Yi-Che Lee ◽

Yun Zhang ◽

Hee-Jin Kim ◽

Suk Choi ◽

Zachary Lochner ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Double Heterojunction ◽

Direct Growth

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High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors

phys stat sol (a) ◽

10.1002/1521-396x(200111)188:1<183::aid-pssa183>3.0.co;2-l ◽

2001 ◽

Vol 188 (1) ◽

pp. 183-186 ◽

Cited By ~ 8

Author(s):

T. Makimoto ◽

K. Kumakura ◽

N. Kobayashi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

High Current ◽

Double Heterojunction

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Low Turn-On Voltage and High-Current $\hbox{InP}/ \hbox{In}_{0.37}\hbox{Ga}_{0.63}\hbox{As}_{0.89}\hbox{Sb}_{0.11}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Double Heterojunction Bipolar Transistors

IEEE Electron Device Letters ◽

10.1109/led.2008.923207 ◽

2008 ◽

Vol 29 (7) ◽

pp. 655-657 ◽

Cited By ~ 16

Author(s):

Shu-Han Chen ◽

Kuo-Hung Teng ◽

Hsin-Yuan Chen ◽

Sheng-Yu Wang ◽

Jen-Inn Chyi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

High Current ◽

Turn On ◽

Double Heterojunction

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High current effects in double heterojunction bipolar transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/20/5/015 ◽

2005 ◽

Vol 20 (5) ◽

pp. 412-417 ◽

Cited By ~ 6

Author(s):

Marcus Yee ◽

Peter A Houston

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

High Current ◽

Double Heterojunction

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InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with high current gain and low base sheet resistance

2009 IEEE International Conference on Indium Phosphide & Related Materials ◽

10.1109/iciprm.2009.5012505 ◽

2009 ◽

Author(s):

Shu-Han Chen ◽

Chao-Min Chang ◽

Pei-Yi Chiang ◽

Sheng-Yu Wang ◽

Jen-Inn Chyi

Keyword(s):

Sheet Resistance ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Double Heterojunction

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High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

IEEE Electron Device Letters ◽

10.1109/55.707 ◽

1988 ◽

Vol 9 (5) ◽

pp. 253-255 ◽

Cited By ~ 32

Author(s):

O. Sugiura ◽

A.G. Dentai ◽

C.H. Joyner ◽

S. Chandrasekhar ◽

J.C. Campbell

Keyword(s):

Vapor Phase ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Vapor Phase Epitaxy ◽

Current Gain ◽

High Current ◽

Organic Vapor ◽

Double Heterojunction ◽

Metal Organic

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