Molecular beam epitaxial double heterojunction bipolar transistors with high current gains

S.L. Su; W.G. Lyons; O. Tejayadi; R. Fischer; W. Kopp; H. Morkoç; W. McLevige; H.T. Yuan

doi:10.1049/el:19830090

Molecular beam epitaxial double heterojunction bipolar transistors with high current gains

Electronics Letters ◽

10.1049/el:19830090 ◽

1983 ◽

Vol 19 (4) ◽

pp. 128 ◽

Cited By ~ 4

Author(s):

S.L. Su ◽

W.G. Lyons ◽

O. Tejayadi ◽

R. Fischer ◽

W. Kopp ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

High Current ◽

Molecular Beam Epitaxial ◽

Double Heterojunction

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Effect of junction and band‐gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double‐heterojunction bipolar transistors

Journal of Applied Physics ◽

10.1063/1.347373 ◽

1991 ◽

Vol 69 (2) ◽

pp. 1067-1070 ◽

Cited By ~ 4

Author(s):

S. Noor Mohammad ◽

J. Chen ◽

J.‐I. Chyi ◽

H. Morkoç

Keyword(s):

Band Gap ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Electrical Performance ◽

Molecular Beam Epitaxial ◽

Double Heterojunction

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Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistors

International Conference on Molecular Bean Epitaxy ◽

10.1109/mbe.2002.1037777 ◽

2003 ◽

Author(s):

R.D. Rajavel ◽

T. Hussain ◽

M.C. Montes ◽

D.H. Chow

Keyword(s):

Epitaxial Growth ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Molecular Beam Epitaxial ◽

Double Heterojunction ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistors

Journal of Crystal Growth ◽

10.1016/s0022-0248(02)02363-1 ◽

2003 ◽

Vol 251 (1-4) ◽

pp. 848-851 ◽

Cited By ~ 12

Author(s):

R.D. Rajavel ◽

T. Hussain ◽

M.C. Montes ◽

M.W. Sawins ◽

S. Thomas ◽

...

Keyword(s):

Epitaxial Growth ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Molecular Beam Epitaxial ◽

Double Heterojunction ◽

Molecular Beam Epitaxial Growth

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High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2190678 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1564 ◽

Cited By ~ 2

Author(s):

Bing-Ruey Wu ◽

Benjamin F. Chu-Kung ◽

Milton Feng ◽

K. Y. Cheng

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Performance ◽

Molecular Beam ◽

Bipolar Transistors ◽

Gas Source ◽

Double Heterojunction

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Molecular-beam epitaxial growth of heavily acceptor doped GaAs layers for GaAlAs/GaAs heterojunction bipolar transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586135 ◽

1992 ◽

Vol 10 (2) ◽

pp. 856 ◽

Cited By ~ 14

Author(s):

W. E. Hoke

Keyword(s):

Epitaxial Growth ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588905 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2225 ◽

Cited By ~ 3

Author(s):

T. P. Chin

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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Asymmetric characteristics of InGaP/GaAs double-heterojunction bipolar transistors grown by solid source molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/7/3/026 ◽

1992 ◽

Vol 7 (3) ◽

pp. 425-428 ◽

Cited By ~ 7

Author(s):

T W Lee ◽

P A Houston ◽

R Kumar ◽

G Hill ◽

M Hopkinson

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1306657 ◽

2000 ◽

Vol 77 (6) ◽

pp. 869-871 ◽

Cited By ~ 43

Author(s):

H. Q. Zheng ◽

K. Radhakrishnan ◽

H. Wang ◽

K. H. Yuan ◽

S. F. Yoon ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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InGaAsSb/InP Double Heterojunction Bipolar Transistors Grown by Solid-Source Molecular Beam Epitaxy

IEEE Electron Device Letters ◽

10.1109/led.2007.901874 ◽

2007 ◽

Vol 28 (8) ◽

pp. 679-681 ◽

Cited By ~ 12

Author(s):

Shu-Han Chen ◽

Sheng-Yu Wang ◽

Rei-Jay Hsieh ◽

Jen-Inn Chyi

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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A comparative study of metamorphic InP/InGaAs double heterojunction bipolar transistors with InP and InAIP buffer layers grown by molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/bf02692445 ◽

2006 ◽

Vol 35 (2) ◽

pp. 266-272 ◽

Cited By ~ 1

Author(s):

Yongkun Sin ◽

Nathan Presser ◽

Paul Adams

Keyword(s):

Molecular Beam Epitaxy ◽

Comparative Study ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Buffer Layers ◽

Double Heterojunction

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