High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

Toshiki Makimoto; Kazuhide Kumakura; Naoki Kobayashi

doi:10.1063/1.1597989

High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

Applied Physics Letters ◽

10.1063/1.1597989 ◽

2003 ◽

Vol 83 (5) ◽

pp. 1035-1037 ◽

Cited By ~ 35

Author(s):

Toshiki Makimoto ◽

Kazuhide Kumakura ◽

Naoki Kobayashi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Double Heterojunction

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High current gain (<2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226854 ◽

2004 ◽

Author(s):

T. Makimoto ◽

K. Kumakura ◽

N. Kobayashi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Offset Voltage ◽

Double Heterojunction

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High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2064316 ◽

2010 ◽

Vol 57 (11) ◽

pp. 2964-2969 ◽

Cited By ~ 20

Author(s):

Yi-Che Lee ◽

Yun Zhang ◽

Hee-Jin Kim ◽

Suk Choi ◽

Zachary Lochner ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Double Heterojunction ◽

Direct Growth

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InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with high current gain and low base sheet resistance

2009 IEEE International Conference on Indium Phosphide & Related Materials ◽

10.1109/iciprm.2009.5012505 ◽

2009 ◽

Author(s):

Shu-Han Chen ◽

Chao-Min Chang ◽

Pei-Yi Chiang ◽

Sheng-Yu Wang ◽

Jen-Inn Chyi

Keyword(s):

Sheet Resistance ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Double Heterojunction

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High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

IEEE Electron Device Letters ◽

10.1109/55.707 ◽

1988 ◽

Vol 9 (5) ◽

pp. 253-255 ◽

Cited By ~ 32

Author(s):

O. Sugiura ◽

A.G. Dentai ◽

C.H. Joyner ◽

S. Chandrasekhar ◽

J.C. Campbell

Keyword(s):

Vapor Phase ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Vapor Phase Epitaxy ◽

Current Gain ◽

High Current ◽

Organic Vapor ◽

Double Heterojunction ◽

Metal Organic

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Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

MRS Proceedings ◽

10.1557/proc-833-g3.7 ◽

2004 ◽

Vol 833 ◽

Author(s):

Byoung-Gue Min ◽

Jong-Min Lee ◽

Seong-Il Kim ◽

Chul-Won Ju ◽

Kyung-Ho Lee

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Oxide ◽

Surface Recombination ◽

Surface States ◽

Bipolar Transistors ◽

Base Layer ◽

Current Gain ◽

Device Structure ◽

Double Heterojunction ◽

Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

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A New Application of a-SiC Films for Realizing High Current Gain Si Heterojunction Bipolar Transistors

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_46 ◽

1992 ◽

pp. 322-325

Author(s):

K. Sasaki ◽

T. Miyajima ◽

S. Furukawa

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Sic Films

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Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/3/017 ◽

2006 ◽

Vol 21 (3) ◽

pp. 303-305 ◽

Cited By ~ 14

Author(s):

Y S Lin ◽

D H Huang ◽

W C Hsu ◽

K H Su ◽

T B Wang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

Double Heterojunction

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High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.10.231 ◽

2007 ◽

Vol 298 ◽

pp. 852-856 ◽

Cited By ~ 6

Author(s):

T. Chung ◽

D.M. Keogh ◽

J.-H. Ryou ◽

D. Yoo ◽

J. Limb ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Metalorganic Chemical

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High-speed, high-current-gain p-n-p InP/InGaAs heterojunction bipolar transistors

IEEE Electron Device Letters ◽

10.1109/55.215087 ◽

1993 ◽

Vol 14 (1) ◽

pp. 19-21 ◽

Cited By ~ 27

Author(s):

L.M. Lunardi ◽

S. Chandrasekhar ◽

R.A. Hamm

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Speed ◽

Bipolar Transistors ◽

Current Gain ◽

High Current

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High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Heavily Doped Base

10.7567/ssdm.1984.c-4-3 ◽

1984 ◽

Author(s):

Hiroshi ITO ◽

Tadao ISHIBASHI ◽

Takayuki SUGETA

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Heavily Doped

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