Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

2015 ◽  
Vol 1 (6) ◽  
pp. 1500045 ◽  
Author(s):  
Mohamed T. Ghoneim ◽  
Mohammed A. Zidan ◽  
Mohammed Y. Alnassar ◽  
Amir N. Hanna ◽  
Jurgen Kosel ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Applications ◽  
Ferroelectric Capacitors

Flexible Electronics: Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications (Adv. Electron. Mater. 6/2015)

2015 ◽  
Vol 1 (6) ◽  
pp. n/a-n/a
Author(s):  
Mohamed T. Ghoneim ◽  
Mohammed A. Zidan ◽  
Mohammed Y. Alnassar ◽  
Amir N. Hanna ◽  
Jurgen Kosel ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Nonvolatile Memory ◽  
Memory Applications ◽  
Ferroelectric Capacitors

Epitaxial LaNiO3Interlayers for Ferroelectric Memory Structures

1994 ◽  
Vol 341 ◽  
Author(s):  
J. D. Klein ◽  
A. Yen ◽  
S. L. Clauson
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Remanent Polarization ◽  
Long Term Memory ◽  
Metallic Contact ◽  
Ferroelectric Capacitor ◽  
Wide Range ◽  
Memory Applications ◽  
Ferroelectric Capacitors

AbstractLaNiO3 thin films were utilized as metallic contact layers in ferroelectric capacitors. The LaNiO3 films were probably epitaxial when deposited atop (100) LaAlO3 substrates. They exhibited metallic resistivity over a wide range of temperature and oxygen partial pressure. Subsequent deposition of PZT and LaNiO3 thin films atop LaNiO3/LaAlO3 allowed realization of parallel-plate ferroelectric capacitor structures. The suitability of such devices for nonvolatile memory applications was surveyed through pulsed voltage testing. The observed 1-second remanent polarization exceeded 18 μC/cm2. Long-term memory was demonstrated for up to sixteen hours. No decrease in remanent polarization was apparent after more than 109 switching cycles.

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

scholarly journals A 1T2C FeCAP-Based In-Situ Bitwise X(N)OR Logic Operation with Two-Step Write-Back Circuit for Accelerating Compute-In-Memory

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 385
Author(s):  
Qiao Wang ◽  
Donglin Zhang ◽  
Yulin Zhao ◽  
Chao Liu ◽  
Qiao Hu ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Reliability ◽  
Charge Sharing ◽  
Operation Speed ◽  
Sharing Function ◽  
Logic Operations ◽  
A Charge ◽  
Process Compatibility ◽  
Ferroelectric Capacitors

Ferroelectric capacitors (FeCAPs) with high process compatibility, high reliability, ultra-low programming current and fast operation speed are promising candidates to traditional volatile and nonvolatile memory. In addition, they have great potential in the fields of storage, computing, and memory logic. Nevertheless, effective methods to realize logic and memory in FeCAP devices are still lacking. This study proposes a 1T2C FeCAP-based in situ bitwise X(N)OR logic based on a charge-sharing function. First, using the 1T2C structure and a two-step write-back circuit, the nondestructive reading is realized with less complexity than the previous work. Second, a method of two-line activation is used during the operation of X(N)OR. The verification results show that the speed, area and power consumption of the proposed 1T2C FeCAP-based bitwise logic operations are significantly improved.

Gadolinium-based metal oxide for nonvolatile memory applications

2012 ◽  
Vol 52 (4) ◽  
pp. 635-641 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Chih-Ting Lin ◽  
Pai-Chi Chou ◽  
Chao-Sung Lai
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Memory Applications

The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

2015 ◽  
Vol 138 ◽  
pp. 86-90 ◽  
Author(s):  
Pi-Chun Juan ◽  
Jyh-Liang Wang ◽  
Tsang-Yen Hsieh ◽  
Cheng-Li Lin ◽  
Chia-Ming Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Ferroelectric Thin Films ◽  
Memory Applications ◽  
Electrical Characterizations

Lead based ferroelectric capacitors for low voltage non-volatile memory applications

1998 ◽  
Vol 19 (1-4) ◽  
pp. 159-177 ◽  
Author(s):  
S. Aggarwal ◽  
A. S. Prakash ◽  
T. K. Song ◽  
S. Sadashivan ◽  
A. M. Dhote ◽  
...  
Keyword(s):  
Low Voltage ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications ◽  
Ferroelectric Capacitors
Sign in / Sign up

Export Citation Format

Share Document