Van Der Waals Hybrid Perovskite of High Optical Quality by Chemical Vapor Deposition

2017 ◽  
Vol 5 (21) ◽  
pp. 1700373 ◽  
Author(s):  
Zhizhong Chen ◽  
Yiping Wang ◽  
Xin Sun ◽  
Yuwei Guo ◽  
Yang Hu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
Optical Quality ◽  
High Optical Quality ◽  
Hybrid Perovskite

High optical quality multicarat single crystal diamond produced by chemical vapor deposition

2011 ◽  
Vol 209 (1) ◽  
pp. 101-104 ◽  
Author(s):  
Yu-fei Meng ◽  
Chih-shiue Yan ◽  
Szczesny Krasnicki ◽  
Qi Liang ◽  
Joseph Lai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
High Optical Quality ◽  
Single Crystal Diamond

scholarly journals High optical quality of MoS 2 monolayers grown by chemical vapor deposition

2D Materials ◽  
2019 ◽  
Vol 7 (1) ◽  
pp. 015011 ◽  
Author(s):  
Shivangi Shree ◽  
Antony George ◽  
Tibor Lehnert ◽  
Christof Neumann ◽  
Meryem Benelajla ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
High Optical Quality

Self-Assembled Growth of Tail-Like Cluster Composed of Flower-Shaped ZnO Microwires by Chemical Vapor Deposition Method

2018 ◽  
Vol 279 ◽  
pp. 202-207
Author(s):  
De Chao Yang ◽  
Yu Qiu ◽  
Bo Wu ◽  
Jing Qian Luo ◽  
Zhi Yu Huang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Green Emission ◽  
Optical Quality ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
High Optical Quality ◽  
Self Assembled

A self-assembled ZnO tail-like cluster (TC) had been successfully synthesized by a simple chemical vapor deposition method. Scanning electron microscopy observations show that ZnO TC is composed of bushy ZnO microwires with flower-shaped cross sections. Long and narrow furrows can be clearly observed on the surface of the ZnO TC. A possible growth model is proposed to discuss the formation mechanism. The analytical result indicates that the flower-shaped ZnO microwires are formed by the lateral coalescence of ZnO wires at high temperature. The room temperature PL spectrum shows a prominent UV emission band around 380 nm, and no green emission is found, implying that the unique flower-shaped ZnO microwires have high optical quality. This controlled growth of ZnO TC may have implication for potential applications in novel optoelectronic micro/nanodevices in the near future.

scholarly journals Microscopic evidence of strong interactions between chemical vapor deposited 2D MoS2 film and SiO2 growth template

2021 ◽  
Vol 8 (1) ◽  
Author(s):  
Woonbae Sohn ◽  
Ki Chang Kwon ◽  
Jun Min Suh ◽  
Tae Hyung Lee ◽  
Kwang Chul Roh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Spherical Aberration ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
Interface Layer ◽  
Van Der Waals Interactions ◽  
Strong Interactions ◽  
Transition Electron Microscopy ◽  
Oxide Substrates

AbstractTwo-dimensional MoS2 film can grow on oxide substrates including Al2O3 and SiO2. However, it cannot grow usually on non-oxide substrates such as a bare Si wafer using chemical vapor deposition. To address this issue, we prepared as-synthesized and transferred MoS2 (AS-MoS2 and TR-MoS2) films on SiO2/Si substrates and studied the effect of the SiO2 layer on the atomic and electronic structure of the MoS2 films using spherical aberration-corrected scanning transition electron microscopy (STEM) and electron energy loss spectroscopy (EELS). The interlayer distance between MoS2 layers film showed a change at the AS-MoS2/SiO2 interface, which is attributed to the formation of S–O chemical bonding at the interface, whereas the TR-MoS2/SiO2 interface showed only van der Waals interactions. Through STEM and EELS studies, we confirmed that there exists a bonding state in addition to the van der Waals force, which is the dominant interaction between MoS2 and SiO2. The formation of S–O bonding at the AS-MoS2/SiO2 interface layer suggests that the sulfur atoms at the termination layer in the MoS2 films are bonded to the oxygen atoms of the SiO2 layer during chemical vapor deposition. Our results indicate that the S–O bonding feature promotes the growth of MoS2 thin films on oxide growth templates.

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