scholarly journals Atomic Layer Engineering of Epsilon‐Near‐Zero Ultrathin Films with Controllable Field Enhancement

2020 ◽  
Vol 7 (17) ◽  
pp. 2000844
Author(s):  
Sudip Gurung ◽  
Aleksei Anopchenko ◽  
Subhajit Bej ◽  
Jay Joyner ◽  
Jason D. Myers ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Field Enhancement ◽  
Atomic Layer ◽  
Epsilon Near Zero

scholarly journals Modeling and observation of mid-infrared nonlocality in effective epsilon-near-zero ultranarrow coaxial apertures

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Daehan Yoo ◽  
Ferran Vidal-Codina ◽  
Cristian Ciracì ◽  
Ngoc-Cuong Nguyen ◽  
David R. Smith ◽  
...  
Keyword(s):  
Field Enhancement ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Large Area ◽  
Infrared Sensors ◽  
Mid Infrared ◽  
Critical Gap ◽  
Nanophotonic Devices ◽  
Extreme Scale ◽  
Epsilon Near Zero

Abstract With advances in nanofabrication techniques, extreme-scale nanophotonic devices with critical gap dimensions of just 1–2 nm have been realized. Plasmons in such ultranarrow gaps can exhibit nonlocal response, which was previously shown to limit the field enhancement and cause optical properties to deviate from the local description. Using atomic layer lithography, we create mid-infrared-resonant coaxial apertures with gap sizes as small as 1 nm and observe strong evidence of nonlocality, including spectral shifts and boosted transmittance of the cutoff epsilon-near-zero mode. Experiments are supported by full-wave 3-D nonlocal simulations performed with the hybridizable discontinuous Galerkin method. This numerical method captures atomic-scale variations of the electromagnetic fields while efficiently handling extreme-scale size mismatch. Combining atomic-layer-based fabrication techniques with fast and accurate numerical simulations provides practical routes to design and fabricate highly-efficient large-area mid-infrared sensors, antennas, and metasurfaces.

Field Enhancement of Epsilon-Near-Zero Modes in Atomic-Layer-Deposited ZnO:Al Nanolayers

2019 ◽  
Author(s):  
Aleksei Anopchenko ◽  
Sudip Gurung ◽  
Subhajit Bej ◽  
Jay Joyner ◽  
Ho Wai Howard Lee
Keyword(s):  
Field Enhancement ◽  
Atomic Layer ◽  
Zero Modes ◽  
Epsilon Near Zero

Low Temperature Epitaxial Oxide Ultrathin Films and Nanostructures by Atomic Layer Deposition

2012 ◽  
Vol 24 (19) ◽  
pp. 3732-3737 ◽  
Author(s):  
Mariona Coll ◽  
Jaume Gazquez ◽  
Anna Palau ◽  
Maria Varela ◽  
Xavier Obradors ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Ultrathin Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Epitaxial Oxide

scholarly journals Quantum plasmonic epsilon near zero: field enhancement and cloaking

2018 ◽  
Vol 26 (12) ◽  
pp. 15656 ◽  
Author(s):  
Ali Khademi ◽  
Timothy Dewolf ◽  
Reuven Gordon
Keyword(s):  
Field Enhancement ◽  
Zero Field ◽  
Epsilon Near Zero

scholarly journals Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1058
Author(s):  
Katherine Hansen ◽  
Melissa Cardona ◽  
Amartya Dutta ◽  
Chen Yang
Keyword(s):  
Atomic Layer Deposition ◽  
Ultrathin Films ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Blue Shift ◽  
Transition Metal Nitrides ◽  
Temperature Plasma ◽  
Promising Alternative ◽  
Layer Deposition ◽  
Post Deposition

Transition metal nitrides, like titanium nitride (TiN), are promising alternative plasmonic materials. Here we demonstrate a low temperature plasma-enhanced atomic layer deposition (PE-ALD) of non-stoichiometric TiN0.71 on lattice-matched and -mismatched substrates. The TiN was found to be optically metallic for both thick (42 nm) and thin (11 nm) films on MgO and Si <100> substrates, with visible light plasmon resonances in the range of 550–650 nm. We also demonstrate that a hydrogen plasma post-deposition treatment improves the metallic quality of the ultrathin films on both substrates, increasing the ε1 slope by 1.3 times on MgO and by 2 times on Si (100), to be similar to that of thicker, more metallic films. In addition, this post-deposition was found to tune the plasmonic properties of the films, resulting in a blue-shift in the plasmon resonance of 44 nm on a silicon substrate and 59 nm on MgO.

scholarly journals Infrared Absorption Study of Zn–S Hybrid and ZnS Ultrathin Films Deposited on Porous AAO Ceramic Support

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 459 ◽  
Author(s):  
Maksymilian Włodarski ◽  
Matti Putkonen ◽  
Małgorzata Norek
Keyword(s):  
Ir Spectroscopy ◽  
Ir Spectra ◽  
Ultrathin Films ◽  
Signal To Noise Ratio ◽  
Porous Ceramic ◽  
Reference Sample ◽  
Atomic Layer ◽  
Porous Support ◽  
Ceramic Support ◽  
Developed Surface

Infrared (IR) spectroscopy is a powerful technique to characterize the chemical structure and dynamics of various types of samples. However, the signal-to-noise-ratio drops rapidly when the sample thickness gets much smaller than penetration depth, which is proportional to wavelength. This poses serious problems in analysis of thin films. In this work, an approach is demonstrated to overcome these problems. It is shown that a standard IR spectroscopy can be successfully employed to study the structure and composition of films as thin as 20 nm, when the layers were grown on porous substrates with a well-developed surface area. In contrast to IR spectra of the films deposited on flat Si substrates, the IR spectra of the same films but deposited on porous ceramic support show distinct bands that enabled reliable chemical analysis. The analysis of Zn-S ultrathin films synthesized by atomic layer deposition (ALD) from diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as precursors of Zn and S, respectively, served as proof of concept. However, the approach presented in this study can be applied to analysis of any ultrathin film deposited on target substrate and simultaneously on porous support, where the latter sample would be a reference sample dedicated for IR analysis of this film.

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