Field Enhancement of Epsilon-Near-Zero Modes in Atomic-Layer-Deposited ZnO:Al Nanolayers

2019 ◽  
Author(s):  
Aleksei Anopchenko ◽  
Sudip Gurung ◽  
Subhajit Bej ◽  
Jay Joyner ◽  
Ho Wai Howard Lee
Keyword(s):  
Field Enhancement ◽  
Atomic Layer ◽  
Zero Modes ◽  
Epsilon Near Zero

scholarly journals Modeling and observation of mid-infrared nonlocality in effective epsilon-near-zero ultranarrow coaxial apertures

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Daehan Yoo ◽  
Ferran Vidal-Codina ◽  
Cristian Ciracì ◽  
Ngoc-Cuong Nguyen ◽  
David R. Smith ◽  
...  
Keyword(s):  
Field Enhancement ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Large Area ◽  
Infrared Sensors ◽  
Mid Infrared ◽  
Critical Gap ◽  
Nanophotonic Devices ◽  
Extreme Scale ◽  
Epsilon Near Zero

Abstract With advances in nanofabrication techniques, extreme-scale nanophotonic devices with critical gap dimensions of just 1–2 nm have been realized. Plasmons in such ultranarrow gaps can exhibit nonlocal response, which was previously shown to limit the field enhancement and cause optical properties to deviate from the local description. Using atomic layer lithography, we create mid-infrared-resonant coaxial apertures with gap sizes as small as 1 nm and observe strong evidence of nonlocality, including spectral shifts and boosted transmittance of the cutoff epsilon-near-zero mode. Experiments are supported by full-wave 3-D nonlocal simulations performed with the hybridizable discontinuous Galerkin method. This numerical method captures atomic-scale variations of the electromagnetic fields while efficiently handling extreme-scale size mismatch. Combining atomic-layer-based fabrication techniques with fast and accurate numerical simulations provides practical routes to design and fabricate highly-efficient large-area mid-infrared sensors, antennas, and metasurfaces.

scholarly journals Atomic Layer Engineering of Epsilon‐Near‐Zero Ultrathin Films with Controllable Field Enhancement

2020 ◽  
Vol 7 (17) ◽  
pp. 2000844
Author(s):  
Sudip Gurung ◽  
Aleksei Anopchenko ◽  
Subhajit Bej ◽  
Jay Joyner ◽  
Jason D. Myers ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Field Enhancement ◽  
Atomic Layer ◽  
Epsilon Near Zero

Epsilon-near-Zero Modes and Surface Plasmon Resonance in Fluorine-Doped Cadmium Oxide Thin Films

ACS Photonics ◽  
2017 ◽  
Vol 4 (8) ◽  
pp. 1885-1892 ◽  
Author(s):  
Evan L. Runnerstrom ◽  
Kyle P. Kelley ◽  
Edward Sachet ◽  
Christopher T. Shelton ◽  
Jon-Paul Maria
Keyword(s):  
Thin Films ◽  
Surface Plasmon Resonance ◽  
Surface Plasmon ◽  
Plasmon Resonance ◽  
Cadmium Oxide ◽  
Oxide Thin Films ◽  
Zero Modes ◽  
Epsilon Near Zero

scholarly journals Quantum plasmonic epsilon near zero: field enhancement and cloaking

2018 ◽  
Vol 26 (12) ◽  
pp. 15656 ◽  
Author(s):  
Ali Khademi ◽  
Timothy Dewolf ◽  
Reuven Gordon
Keyword(s):  
Field Enhancement ◽  
Zero Field ◽  
Epsilon Near Zero

Photonically Tunable MIR Epsilon-Near Zero Modes in CdO Thin Films

2018 ◽  
Author(s):  
Elizabeth Radue ◽  
Evan Runnerstrom ◽  
Kyle Kelley ◽  
J. P. Maria ◽  
Patrick Hopkins
Keyword(s):  
Thin Films ◽  
Zero Modes ◽  
Cdo Thin Films ◽  
Epsilon Near Zero

scholarly journals Epsilon-Near-Zero Modes for Tailored Light-Matter Interaction

2015 ◽  
Vol 4 (4) ◽  
Author(s):  
Salvatore Campione ◽  
Sheng Liu ◽  
Alexander Benz ◽  
John F. Klem ◽  
Michael B. Sinclair ◽  
...  
Keyword(s):  
Zero Modes ◽  
Matter Interaction ◽  
Light Matter Interaction ◽  
Epsilon Near Zero

Polaritonic Hybrid-Epsilon-near-Zero Modes: Beating the Plasmonic Confinement vs Propagation-Length Trade-Off with Doped Cadmium Oxide Bilayers

Nano Letters ◽  
2018 ◽  
Vol 19 (2) ◽  
pp. 948-957 ◽  
Author(s):  
Evan L. Runnerstrom ◽  
Kyle P. Kelley ◽  
Thomas G. Folland ◽  
J. Ryan Nolen ◽  
Nader Engheta ◽  
...  
Keyword(s):  
Cadmium Oxide ◽  
Propagation Length ◽  
Trade Off ◽  
Zero Modes ◽  
Epsilon Near Zero

Ultrafast Dynamics of Epsilon-Near-Zero Modes in GaAs at Terahertz Frequencies

2016 ◽  
Author(s):  
Yuanmu Yang ◽  
Kamaraju Natarajan ◽  
Salvatore Campione ◽  
Sheng Liu ◽  
John Reno ◽  
...  
Keyword(s):  
Ultrafast Dynamics ◽  
Zero Modes ◽  
Terahertz Frequencies ◽  
Epsilon Near Zero

scholarly journals Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 922 ◽  
Author(s):  
Jiqing Lian ◽  
Dawei Zhang ◽  
Ruijin Hong ◽  
Peizhen Qiu ◽  
Taiguo Lv ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Plasma Oscillation ◽  
Field Enhancement ◽  
Fdtd Simulation ◽  
Structural Defects ◽  
Defect States ◽  
Vacancy Defects ◽  
Epsilon Near Zero

Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulation of permittivity is dominated by the transformation of plasma oscillation frequency and carrier concentration depending on Drude model, which was produced by the formation of structural defects and the reduction of oxygen vacancy defects during annealing. The evolution of defects can be inferred by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The optical bandgaps (Eg) were investigated to explain the existence of defect states. And the formation of structure defects and the electric field enhancement were further verified by finite-difference time domain (FDTD) simulation.

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