Mixed-Ionic-Electronic-Conduction (MIEC)-Based Access Devices for 3D Multilayer Crosspoint Memory

2015 ◽  
Vol 1729 ◽  
pp. 3-14
Author(s):  
Kumar Virwani ◽  
Geoffrey W. Burr ◽  
Pritish Narayanan ◽  
Bülent Kurdi
Keyword(s):  
High Performance ◽  
Memory Device ◽  
Electronic Conduction ◽  
Critical Dimensions ◽  
Access Device ◽  
Long Term Stability ◽  
Low Leakage ◽  
Hole Conduction ◽  
Non Volatile Memory ◽  
In Series

ABSTRACTA number of applications call for the organization of resistive non-volatile memory (NVM) into large, densely-packed crossbar arrays. While resistive-NVM devices often possess some degree of inherent nonlinearity (typically 3-30× contrast), the operation of large (>1000×1000 device) arrays at low power tends to require large (> 1e7) ON-to-OFF ratios between the currents passed at high and at low voltages. Such large nonlinearities can be implemented by including a distinct access device together with each of the state-bearing resistive-NVM elements. While such an access device need not store data, its list of requirements is almost as challenging as the specifications demanded of the memory device.We review our work on high-performance access devices based on Cu-containing Mixed-Ionic-Electronic Conduction (MIEC) materials [1–7]. (This version focuses only on the MIEC-based access device itself; previously-published longer versions of this work [8–10] also include more extensive surveys of competing devices as well.) These devices require only the low processing temperatures of the Back-End-Of-the-Line (BEOL), making them highly suitable for implementing multi-layer crossbar arrays. MIEC-based access devices offer large ON/OFF ratios (>1e7), a significant voltage margin Vm (over which current < 10nA), and ultra-low leakage (<10pA), while also offering the high current densities needed for PCM and the fully bipolar operation needed for high-performance RRAM. Scalability to critical dimensions (CD) <30nm and thicknesses <15nm, tight distributions and 100% yield in large (512kBit) arrays, long-term stability of the ultra-low leakage states, and sub-50ns turn-ON times have all been demonstrated. Numerical modeling of these MIEC-based access devices shows that their operation depends on Cu+ mediated hole conduction. Circuit simulations reveal that while scaled MIEC devices are suitable for large crossbar arrays of resistive-NVM devices with low (<1.2V) switching voltages, a compact vertical stack of two MIEC devices in series could support large crossbar arrays for switching voltages up to 2.5V.

Fabrication of Nanostructure and Formation of Nanocrystal for Non-Volatile Memory

2006 ◽  
Vol 6 (11) ◽  
pp. 3652-3656 ◽  
Author(s):  
Sungwook Jung ◽  
I. O. Parm ◽  
Kyung Soo Jang ◽  
Dae-Ho Park ◽  
Byeong-Hyeok Sohn ◽  
...  
Keyword(s):  
Thin Film ◽  
Block Copolymer ◽  
Memory Device ◽  
Critical Dimensions ◽  
Planar Structures ◽  
Non Volatile Memory ◽  
Needle Structure ◽  
Volatile Memory ◽  
Self Assembled ◽  
Surface Morphologies

In this work, we have demonstrated that the nanocrystal created by combining the self-assembled block copolymer thin film with regular semiconductor processing can be applicable to non-volatile memory device with increased charge storage capacity over planar structures. Self-assembled block copolymer thin film for nanostructures with critical dimensions below photolithographic resolution limits has been used during all experiments. Nanoporous thin film from PS-b-PMMA diblock copolymer thin film with selective removal of PMMA domains was used to fabricate nanostructure and nanocrystal. We have also reported about surface morphologies and electrical properties of the nano-needle structure formed by RIE technique. The details of nanoscale pattern of the very uniform arrays using RIE are presented. We fabricated different surface structure of nanoscale using block copolymer. We also deposited Si-rich SiNx layer using ICP-CVD on the silicon surface of nanostructure. The deposited films were studied after annealing. PL studies demonstrated nanocrystal in Si-rich SiNx film on nanostructure of silicon.

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

scholarly journals Recent Advances in ZnO-Based Carbon Monoxide Sensors: Role of Doping

Sensors ◽  
2021 ◽  
Vol 21 (13) ◽  
pp. 4425
Author(s):  
Ana María Pineda-Reyes ◽  
María R. Herrera-Rivera ◽  
Hugo Rojas-Chávez ◽  
Heriberto Cruz-Martínez ◽  
Dora I. Medina
Keyword(s):  
Carbon Monoxide ◽  
High Performance ◽  
Gas Sensing ◽  
Experimental Studies ◽  
Electrical Performance ◽  
Long Term Stability ◽  
Sensing Applications ◽  
Recent Advances ◽  
Sensitivity And Selectivity ◽  
Doped Zno

Monitoring and detecting carbon monoxide (CO) are critical because this gas is toxic and harmful to the ecosystem. In this respect, designing high-performance gas sensors for CO detection is necessary. Zinc oxide-based materials are promising for use as CO sensors, owing to their good sensing response, electrical performance, cost-effectiveness, long-term stability, low power consumption, ease of manufacturing, chemical stability, and non-toxicity. Nevertheless, further progress in gas sensing requires improving the selectivity and sensitivity, and lowering the operating temperature. Recently, different strategies have been implemented to improve the sensitivity and selectivity of ZnO to CO, highlighting the doping of ZnO. Many studies concluded that doped ZnO demonstrates better sensing properties than those of undoped ZnO in detecting CO. Therefore, in this review, we analyze and discuss, in detail, the recent advances in doped ZnO for CO sensing applications. First, experimental studies on ZnO doped with transition metals, boron group elements, and alkaline earth metals as CO sensors are comprehensively reviewed. We then focused on analyzing theoretical and combined experimental–theoretical studies. Finally, we present the conclusions and some perspectives for future investigations in the context of advancements in CO sensing using doped ZnO, which include room-temperature gas sensing.

scholarly journals Using MoS2/Fe3O4 as Ion-Electron Transduction Layer to Manufacture All-Solid-State Ion-Selective Electrode for Determination of Serum Potassium

Chemosensors ◽  
2021 ◽  
Vol 9 (7) ◽  
pp. 155
Author(s):  
Yan Su ◽  
Ting Liu ◽  
Caiqiao Song ◽  
Aiqiao Fan ◽  
Nan Zhu ◽  
...  
Keyword(s):  
High Performance ◽  
Accurate Determination ◽  
Water Layer ◽  
Ion Selective Electrode ◽  
Potential Response ◽  
Selective Electrode ◽  
Response Measurement ◽  
Long Term Stability

As an essential electrolyte for the human body, the potassium ion (K+) plays many physiological roles in living cells, so the rapid and accurate determination of serum K+ is of great significance. In this work, we developed a solid-contact ion-selective electrode (SC-ISE) using MoS2/Fe3O4 composites as the ion-to-electron transducer to determine serum K+. The potential response measurement of MoS2/Fe3O4/K+-ISE shows a Nernst response by a slope of 55.2 ± 0.1 mV/decade and a low detection limit of 6.3 × 10−6 M. The proposed electrode exhibits outstanding resistance to the interference of O2, CO2, light, and water layer formation. Remarkably, it also presents a high performance in potential reproducibility and long-term stability.

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Octopus + : An RDMA-Enabled Distributed Persistent Memory File System

2021 ◽  
Vol 17 (3) ◽  
pp. 1-25
Author(s):  
Bohong Zhu ◽  
Youmin Chen ◽  
Qing Wang ◽  
Youyou Lu ◽  
Jiwu Shu
Keyword(s):  
High Speed ◽  
High Performance ◽  
File System ◽  
Direct Memory Access ◽  
File Systems ◽  
Distributed File Systems ◽  
Persistent Memory ◽  
Memory Modules ◽  
Non Volatile Memory ◽  
Volatile Memory

Non-volatile memory and remote direct memory access (RDMA) provide extremely high performance in storage and network hardware. However, existing distributed file systems strictly isolate file system and network layers, and the heavy layered software designs leave high-speed hardware under-exploited. In this article, we propose an RDMA-enabled distributed persistent memory file system, Octopus + , to redesign file system internal mechanisms by closely coupling non-volatile memory and RDMA features. For data operations, Octopus + directly accesses a shared persistent memory pool to reduce memory copying overhead, and actively fetches and pushes data all in clients to rebalance the load between the server and network. For metadata operations, Octopus + introduces self-identified remote procedure calls for immediate notification between file systems and networking, and an efficient distributed transaction mechanism for consistency. Octopus + is enabled with replication feature to provide better availability. Evaluations on Intel Optane DC Persistent Memory Modules show that Octopus + achieves nearly the raw bandwidth for large I/Os and orders of magnitude better performance than existing distributed file systems.

Hydrothermal Synthesis of Lead Titanate Epitaxial Film for Non-Volatile Memory Device Application

2013 ◽  
Vol 652-654 ◽  
pp. 1846-1850
Author(s):  
Thin Thin Thwe ◽  
Than Than Win ◽  
Yin Maung Maung ◽  
Ko Ko Kyaw Soe
Keyword(s):  
Electron Microscopy ◽  
Silicon Dioxide ◽  
Lead Titanate ◽  
Conduction Mechanism ◽  
Epitaxial Film ◽  
Memory Device ◽  
X Ray Diffraction ◽  
X Ray ◽  
Non Volatile Memory ◽  
Scanning Electron

Hydrothermal synthesized lead titanate (PbTiO3¬) powder was prepared in a Teflon-lined stainless steel bomb at different bath temperatures. X-ray diffraction was performed to examine the phase assignment and crystallographic properties of hydrothermal synthesized lead titanate powder. Silicon dioxide (SiO2) was thermally deposited and adapted as intermediate layer on p-Si (100) substrates for MFIS (Metal/Ferroelectric/ Insulator/Semi-conductor) design. The microstructures of PbTiO3 film for both MFS and MFIS designs were observed by scanning electron microscopy (SEM). Charge conduction mechanism was also interpreted by C-2-V relationship. Polarization and electric field characteristics were measured by Sawyer-Tower circuit and good hysteresis nature was formed for both structures of the films. The loop of MFIS was wider than that of MFS cell. Also, the higher value of polarization (Ps=3.21E-03µC/cm2) for MFIS could be explained on the basis of higher dipole moment in this SiO2 buffer layer.

High-performance humidity sensors from Ni(SO4)0.3(OH)1.4 nanobelts

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 6521-6525 ◽  
Author(s):  
Ming Zhuo ◽  
Yuejiao Chen ◽  
Tao Fu ◽  
Haonan Zhang ◽  
Zhi Xu ◽  
...  
Keyword(s):  
High Performance ◽  
Humidity Sensor ◽  
High Sensitivity ◽  
Fast Response ◽  
Humidity Sensors ◽  
Term Stability ◽  
Long Term Stability

Ni(SO4)0.3(OH)1.4 nanobelts are utilized in a humidity sensor by a facile method. The nanobelt based sensor shows a high sensitivity, fast response and long-term stability in the sensing process.

scholarly journals High-performance hole conductor-free perovskite solar cell using a carbon nanotube counter electrode

RSC Advances ◽  
2020 ◽  
Vol 10 (59) ◽  
pp. 35831-35839 ◽  
Author(s):  
Mustafa K. A. Mohammed
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Carbon Nanotube ◽  
High Performance ◽  
Counter Electrode ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Manufacturing Cost ◽  
Long Term Stability

Carbon-based perovskite solar cells (C-PSCs) are the most promising photovoltaic (PV) due to their low material and manufacturing cost and superior long-term stability.

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