Development of the field-effect mobility in thin films of F16PcCu characterized by electrical in situ measurements during device preparation

2011 ◽  
Vol 12 (8) ◽  
pp. 1376-1382 ◽  
Author(s):  
C. Keil ◽  
D. Schlettwein
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
In Situ Measurements ◽  
Field Effect Mobility

scholarly journals Use of diffusive gradient in thin films for in situ measurements: A review on the progress in chemical fractionation, speciation and bioavailability of metals in waters

2017 ◽  
Vol 983 ◽  
pp. 54-66 ◽  
Author(s):  
Amauri Antonio Menegário ◽  
Lauren N. Marques Yabuki ◽  
Karen S. Luko ◽  
Paul N. Williams ◽  
Daniel M. Blackburn
Keyword(s):  
Thin Films ◽  
In Situ Measurements ◽  
Chemical Fractionation

Systematic Study on the Morphological Development of Blade-Coated Conjugated Polymer Thin Films via In Situ Measurements

2020 ◽  
Vol 12 (32) ◽  
pp. 36417-36427
Author(s):  
Yeon-Ju Kim ◽  
Sehyun Lee ◽  
Muhammad. R. Niazi ◽  
Kyoungtae Hwang ◽  
Ming-Chun Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Systematic Study ◽  
Conjugated Polymer ◽  
Polymer Thin Films ◽  
In Situ Measurements ◽  
Morphological Development

Electrical and Optical Properties of Nano-Crystalline GaN and Nano-Crystalline GaN:H thin Films

1997 ◽  
Vol 467 ◽  
Author(s):  
S. Kobayashi ◽  
S. Nonomura ◽  
K. Abe ◽  
T. Gotoh ◽  
S. Hirata ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Field Effect ◽  
Annealing Treatment ◽  
Drain Current ◽  
Localized States ◽  
Field Effect Mobility ◽  
Hydrogen Incorporation ◽  
Nano Crystalline ◽  
Gan Film

ABSTRACTNano-crystalline GaN (nc-GaN) and hydrogenated nc-GaN (nc-GaN:H) thin films and thin film transistors (TFT) prepared by a reactive sputtering method have been studied. Hydrogen incorporation in nc-GaN film induces localized states at mid-gap energy. Thermal annealing at 400 °C and 600 °C creates mid-gap states which is detectable by electron spin resonance. Further thermal annealing treatment at 800 °C reduces the deep states in nc-GaN and nc-GaN:H. Photoluminescence spectra of the nc-GaN film have two broad peaks at 2.4 eV and 3.2 eV. The source-drain current voltage characteristics of the nc-GaN TFT is demonstrated for the first time. The obtained field effect mobility is 10−4 cm2/V-s. Thermal annealing at 800 °C improves the field effect mobility to 10−2 cm2/V-s.

The Effect of Morphology on Electron Field-Effect Mobility in Disordered C60 Thin Films

Nano Letters ◽  
2009 ◽  
Vol 9 (3) ◽  
pp. 1085-1090 ◽  
Author(s):  
Joe J. Kwiatkowski ◽  
Jarvist M. Frost ◽  
Jenny Nelson
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Electron Field

Automated apparatus for evaporation and in situ measurements of multiple thin films

1978 ◽  
Vol 49 (1) ◽  
pp. 24-30 ◽  
Author(s):  
William H. Clark ◽  
S. John Brient ◽  
R. L. Longbrake ◽  
J. Elon Graves
Keyword(s):  
Thin Films ◽  
In Situ Measurements

Hall mobility and field effect mobility studies on PbTe HWE thin films

1985 ◽  
Vol 22-23 ◽  
pp. 731-736 ◽  
Author(s):  
P.R. Vaya ◽  
J. Majhi ◽  
B.S.V. Gopalam ◽  
C. Dattatreyan
Keyword(s):  
Thin Films ◽  
Hall Mobility ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Mobility Studies

Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H2Ambient

2008 ◽  
Vol 1 ◽  
pp. 041801 ◽  
Author(s):  
Takamichi Yokoyama ◽  
Chang Bum Park ◽  
Kosuke Nagashio ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Field Effect ◽  
Low Pressure ◽  
Size Increase ◽  
Field Effect Mobility
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