Polymer Thin-Film Transistor Arrays Patterned by Stamping

2005 ◽  
Vol 15 (7) ◽  
pp. 1105-1110 ◽  
Author(s):  
A. Salleo ◽  
W. S. Wong ◽  
M. L. Chabinyc ◽  
K. E. Paul ◽  
R. A. Street
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Polymer Thin Film

Fast Development of Self‐Assembled, Highly Oriented Polymer Thin Film and Observation of Dual Sensing Behavior of Thin Film Transistor for Ammonia Vapor

2019 ◽  
Vol 220 (11) ◽  
pp. 1900010
Author(s):  
Praveen Kumar Sahu ◽  
Lalit Chandra ◽  
Rajiv K. Pandey ◽  
Niraj Singh Mehta ◽  
R. Dwivedi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Ammonia Vapor ◽  
Oriented Polymer ◽  
Polymer Thin Film ◽  
Fast Development ◽  
Self Assembled ◽  
Dual Sensing

All jet-printed polymer thin-film transistor active-matrix backplanes

2004 ◽  
Vol 85 (15) ◽  
pp. 3304-3306 ◽  
Author(s):  
A. C. Arias ◽  
S. E. Ready ◽  
R. Lujan ◽  
W. S. Wong ◽  
K. E. Paul ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Polymer Thin Film ◽  
Active Matrix

scholarly journals P3HT Nanofibrils Thin-Film Transistors by Adsorbing Deposition in Suspension

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3643 ◽  
Author(s):  
Shuichi Nagamatsu ◽  
Masataka Ishida ◽  
Shougo Miyajima ◽  
Shyam S. Pandey
Keyword(s):  
Thin Film ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Preparation Method ◽  
Substrate Surface ◽  
Thin Film Transistor ◽  
Current Ratio ◽  
P3ht Film ◽  
Polymer Thin Film ◽  
Film Preparation

A novel film preparation method utilizing polymer suspension, entitled adsorbing deposition in suspensions (ADS), has been proposed. The poly(3-hexylthiophene) (P3HT) toluene solution forms P3HT nanofibrils dispersed suspension by aging. P3HT nanofibrils are highly crystallized with sharp vibronic absorption spectra. By the ADS method, only P3HT nanofibrils in suspension can be deposited on the substrate surface without any disordered fraction from the dissolved P3HT in suspension. Formed ADS film contains only the nanostructured conjugated polymer. Fabricated polymer thin-film transistor (TFT) utilizing ADS P3HT film shows good TFT performances with low off current, narrow subthreshold swing and large on/off current ratio.

Control of Charge Trap Density in Polymer Thin Film Transistor Using Self-assembled Monolayer with Different Alkyl Chain Length

Polymer Korea ◽  
2019 ◽  
Vol 43 (4) ◽  
pp. 553-558
Author(s):  
Jun Hwa Park ◽  
Yu Ra Choi ◽  
Bo Yeon Min ◽  
Jun Young Moon ◽  
Jae Won Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chain Length ◽  
Alkyl Chain ◽  
Thin Film Transistor ◽  
Alkyl Chain Length ◽  
Trap Density ◽  
Self Assembled Monolayer ◽  
Polymer Thin Film ◽  
Charge Trap ◽  
Self Assembled

Polymer thin film transistor without surface pretreatment on silicon nitride gate dielectric

2008 ◽  
Vol 93 (7) ◽  
pp. 073305 ◽  
Author(s):  
Flora M. Li ◽  
Parul Dhagat ◽  
Hanna M. Haverinen ◽  
Iain McCulloch ◽  
Martin Heeney ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Polymer Thin Film ◽  
Surface Pretreatment

Inkjet Printing of Polymer Thin-Film Transistor Circuits

MRS Bulletin ◽  
2003 ◽  
Vol 28 (11) ◽  
pp. 829-834 ◽  
Author(s):  
Seamus E. Burns ◽  
Paul Cain ◽  
John Mills ◽  
Jizheng Wang ◽  
Henning Sirringhaus
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Thin Film Transistor ◽  
Polymer Thin Film ◽  
Active Matrix ◽  
Polymer Dispersed Liquid Crystal ◽  
Polymer Semiconductors ◽  
Polymer Dispersed ◽  
Placement Accuracy ◽  
Inkjet Printing Technology

AbstractWe present a process for manufacturing printable thin-film transistors (TFTs) that is based on solution processing and direct inkjet printing of polymer semiconductors, dielectrics, and conductors, as well as inorganic nanoparticle conductors. We show that the high device yield, uniformity, and resolution required for thin-film electronic applications can be achieved by using a substrate that contains a surface energy pattern to control the flow and spreading of inkjet droplets. This technique overcomes many of the limitations of current inkjet printing technology related to its limited droplet placement accuracy. We demonstrate the potential of this printing-based TFT manufacturing process with the fabrication of 50 dpi active-matrix, polymer dispersed liquid-crystal and Gyricon Smartpaper electronic paper displays.

Air-stable vapor phase sensing of ammonia in sub-threshold regime of poly(2,5-bis(3-tetradecylthiophen-2yl)thieno(3,2-b)thiophene) based polymer thin-film transistor

2017 ◽  
Vol 246 ◽  
pp. 243-251 ◽  
Author(s):  
Praveen Kumar Sahu ◽  
Manish Pandey ◽  
Chandan Kumar ◽  
Shyam S. Pandey ◽  
Wataru Takashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Vapor Phase ◽  
Thin Film Transistor ◽  
Polymer Thin Film ◽  
Threshold Regime

Critical Considerations in Polymer Thin-Film Transistor (TFT) Dielectrics

2002 ◽  
Vol 725 ◽  
Author(s):  
Munira Raja ◽  
Giles Lloyd ◽  
Naser Sedghi ◽  
Simon J. Higgins ◽  
William Eccleston
Keyword(s):  
Thin Film ◽  
Polymer Film ◽  
Thin Film Transistor ◽  
Polymer Thin Film ◽  
Mos Capacitors ◽  
Ion Motion ◽  
Mobile Species ◽  
Displacement Currents ◽  
Anodised Aluminium ◽  
Voltage Axis

AbstractWe present a study of aqueous and plasma anodised aluminium oxide (Al2O3) and its performance in thin film transistors (TFTs). The current through the oxide was measured with aluminium electrodes and with one of the electrode replaced by poly(3-hexylthiophene)(P3HT). The current increased by up to 2 orders of magnitude with P3HT. The current increased further when the polymer was doped with different percentages of 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ). It was also found to be dependent on the thickness of the polymer film. Surprisingly, the oxide current fell to its initial value when the polymer film was removed. Two mechanisms may explain the behaviour in these devices: charge injection and/or displacement. C-V plots were obtained from the MOS capacitors and were frequency dependent. They also showed substantial hysteresis, with a lateral shift along the voltage axis. This indicates the presence of a mobile species that increases with the concentration of dopant. We deduce that much of the increased gate current is associated with displacement currents induced by ion motion.

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