Polymer thin film transistor without surface pretreatment on silicon nitride gate dielectric

2008 ◽  
Vol 93 (7) ◽  
pp. 073305 ◽  
Author(s):  
Flora M. Li ◽  
Parul Dhagat ◽  
Hanna M. Haverinen ◽  
Iain McCulloch ◽  
Martin Heeney ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Polymer Thin Film ◽  
Surface Pretreatment

Organic thin-film transistor integration using silicon nitride gate dielectric

2007 ◽  
Vol 90 (13) ◽  
pp. 133514 ◽  
Author(s):  
Flora M. Li ◽  
Arokia Nathan ◽  
Yiliang Wu ◽  
Beng S. Ong
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

scholarly journals Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

Membranes ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 902
Author(s):  
Yiming Liu ◽  
Chang Liu ◽  
Houyun Qin ◽  
Chong Peng ◽  
Mingxin Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Oxygen Vacancy ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Subthreshold Swing ◽  
Interface Trap ◽  
Plasma Oxidation ◽  
Conductance Method

In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiNx) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. The mechanism of the high-performance InGaZnO TFT with plasma-oxidized SiNx gate dielectric was also explored. The X-ray photoelectron spectroscopy (XPS) results confirmed that an oxygen-rich layer formed on the surface of the SiNx layer and the amount of oxygen vacancy near the interface between SiNx and InGaZnO layer was suppressed via pre-implanted oxygen on SiNx gate dielectric before deposition of the InGaZnO channel layer. Moreover, the conductance method was employed to directly extract the density of the interface trap (Dit) in InGaZnO TFT to verify the reduction in oxygen vacancy after plasma oxidation. The proposed InGaZnO TFT with plasma oxidation exhibited a field-effect mobility of 16.46 cm2/V·s, threshold voltage (Vth) of −0.10 V, Ion/Ioff over 108, SS of 97 mV/decade, and Vth shift of −0.37 V after NBIS. The plasma oxidation on SiNx gate dielectric provides a novel approach for suppressing the interface trap for high-performance InGaZnO TFT.

Effect of UV/ozone treatment on hysteresis of pentacene thin-film transistor with polymer gate dielectric

2009 ◽  
Vol 53 (6) ◽  
pp. 621-625 ◽  
Author(s):  
Jae Bon Koo ◽  
Seong Yeol Kang ◽  
In Kyu You ◽  
Kyung Soo Suh
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Ozone Treatment ◽  
Uv Ozone
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