Structural Characterization of Sputtered Fe70Pd30 Thin Films During Ex Situ and In Situ TEM Heating

2012 ◽  
Vol 14 (8) ◽  
pp. 716-723 ◽  
Author(s):  
Christoph Bechtold ◽  
Andriy Lotnyk ◽  
Burak Erkartal ◽  
Lorenz Kienle ◽  
Eckhard Quandt
2012 ◽  
Vol 544 ◽  
pp. 34-38 ◽  
Author(s):  
T. Hosokai ◽  
A. Hinderhofer ◽  
A. Vorobiev ◽  
C. Lorch ◽  
T. Watanabe ◽  
...  

Author(s):  
H. Khatri ◽  
J.D. Walker ◽  
J. Li ◽  
V. Ranjan ◽  
R.R. Khanal ◽  
...  
Keyword(s):  

2012 ◽  
Vol 111 (6) ◽  
pp. 064320 ◽  
Author(s):  
Paul R. Ohodnicki ◽  
Congjun Wang ◽  
Sittichai Natesakhawat ◽  
John P. Baltrus ◽  
Thomas D. Brown

Author(s):  
F.K. LeGoues

In recent papers, we have described a novel mechanism for strain relaxation of thin films. Because of its strong resemblance to the well known Frank-Read sources of dislocations, it was called the “Modified-Frank-Read” (MFR) mechanism. This process was first observed during the growth of compositionally graded SiGe/Si(001) thin films, where it results in dislocations pile-ups being injected deep into an initially perfect substrate, leaving the topmost part of the film relaxed and nominally defect free. This last observation opens the door to a wide range of electronic applications since it makes it possible to grow electronic grade buffer layers of arbitrary composition and lattice parameter.The exact mechanism of the reproduction of dislocations was identified through tilting experiment and analysis of several compositionally graded SiGe/Si(001) structures. These also provided the important parameters controlling this mode of strain relaxation. We thus demonstrated that the MFR mechanism corresponds to the multiplication of “corner dislocations” (dislocations whose line forms a 90° angle) by simultaneous glide on two (111) planes.


1990 ◽  
Vol 10 (3) ◽  
pp. 126-132 ◽  
Author(s):  
M. Guilloux-Viry ◽  
M.G. Karkut ◽  
A. Perrin ◽  
M. Sergent

1992 ◽  
Vol 264 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Pradnya V. Nagarkar ◽  
David Volfson ◽  
Klavs F. Jensen ◽  
Stephen D. Senturia

AbstractWe describe an approach using thin films on metals as models to study interfacial interactions. Thin films of biphenyl-tetracarboxylic dianhydride (BPDA) - p-phenylene diamine (PPD) based polyimide on Cr and Au surfaces have been investigated using infrared reflection absorption spectroscopy (IRRAS) and x-ray photoelectron spectroscopy (XPS). IRRAS was used for in-situ monitoring of polymer curing processes. Cured polyimide thin films on metals were characterized ex-situ by both XPS and IRRAS. Anhydride was observed to be an intermediate during chemical transformation of polyamic acid to polyimide. Imidization processes were found to be completed after curing at 250°C for thin films. Strong chemical modification of polyimide thin films resulting from interaction with Cr substrates were observed by infrared spectroscopy. These observations were consistent with angle-resolved XPS data showing a different C 1s emission spectrum of polyimide-Cr interfacial region, compared to the polyimide spectrum.


1999 ◽  
Vol 14 (2) ◽  
pp. 436-441 ◽  
Author(s):  
S. Logothetidis ◽  
E. I. Meletis ◽  
G. Kourouklis

In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) have been used to study the stoichiometry and characterize TiNx thin films deposited by magnetron sputtering at various stoichiometries. In situ SE can provide parameters, such as the plasma energy, that can be utilized for monitoring of the film stoichiometry. Besides plasma energy, optical phonon position in RS was also found to be a sensitive probe of TiNx stoichiometry as detected by RS, XPS, and ex situ SE. Under these conditions, AES faces difficulties for reliable film characterization, and the complementary use of other techniques is required for determining the exact film stoichiometry.


Author(s):  
T. Begou ◽  
S. A. Little ◽  
A. Aquino ◽  
V. Ranjan ◽  
A. Rockett ◽  
...  
Keyword(s):  

2000 ◽  
Vol 110-111 ◽  
pp. 41-67 ◽  
Author(s):  
Jinghua Guo ◽  
Per Skytt ◽  
Nial Wassdahl ◽  
Joseph Nordgren

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