2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Latest Publications

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9781612841663, 9781612841656, 9781612841649

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Improving parasitic emitter resistance determination methods for advanced SiGe:C HBT transistors

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bctm.2011.6082779 ◽

2011 ◽

Cited By ~ 3

Author(s):

C. Raya ◽

B. Ardouin ◽

Z. Huszka

Keyword(s):

Determination Methods

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A new technique for characterizing very low frequency noise of bipolar junction transistors

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bctm.2011.6082774 ◽

2011 ◽

Cited By ~ 1

Author(s):

Hans Tuinhout ◽

Adrie Zegers-van Duijnhoven ◽

Hans Mertens ◽

Anco Heringa

Keyword(s):

Low Frequency ◽

New Technique ◽

Frequency Noise ◽

Bipolar Junction Transistors ◽

Low Frequency Noise ◽

Very Low Frequency ◽

A New Technique

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A Survey of Integrated RF Power Measurement and Control Components for Communications

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bctm.2011.6082756 ◽

2011 ◽

Cited By ~ 1

Author(s):

J. Cowles

Keyword(s):

Power Measurement ◽

Rf Power ◽

And Control ◽

Measurement And Control

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Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bctm.2011.6082748 ◽

2011 ◽

Author(s):

A. Bhattacharyya ◽

C. Maneux ◽

S. Fregonese ◽

T. Zimmer

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Experimental extraction of the base resistance of SiGe:C HBTs beyond BVCEO: An improved technique

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bctm.2011.6082778 ◽

2011 ◽

Author(s):

M. Costagliola ◽

V. d'Alessandro ◽

D. Celi ◽

A. Chantre ◽

P. Chevalier ◽

...

Keyword(s):

Base Resistance ◽

Improved Technique

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Influence of probe tip calibration on measurement accuracy of small-signal parameters of advanced BiCMOS HBTs

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bctm.2011.6082782 ◽

2011 ◽

Cited By ~ 11

Author(s):

A. Rumiantsev ◽

P. Sakalas ◽

N. Derrier ◽

D. Celi ◽

M. Schroter

Keyword(s):

Measurement Accuracy ◽

Small Signal ◽

Signal Parameters

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SiGe:C profile optimization for low noise performance

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bctm.2011.6082773 ◽

2011 ◽

Cited By ~ 8

Author(s):

P.H.C. Magnee ◽

R. van Dalen ◽

H. Mertens ◽

T. Vanhoucke ◽

B. van Velzen ◽

...

Keyword(s):

Low Noise ◽

Noise Performance ◽

Profile Optimization

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A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bctm.2011.6082768 ◽

2011 ◽

Cited By ~ 7

Author(s):

Wei Tai ◽

L. Richard Carley ◽

David S. Ricketts

Keyword(s):

Output Power ◽

Power Amplifier ◽

Saturated Output Power

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A fractional-N synthesizer for software-defined radio with reduced level of spurious tones

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bctm.2011.6082741 ◽

2011 ◽

Cited By ~ 2

Author(s):

Sabbir A. Osmany ◽

Frank Herzel ◽

J. Christoph Scheytt

Keyword(s):

Software Defined Radio ◽

Spurious Tones

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A +18dBm, 79–87.5GHz bandwidth power amplifier in 0.13µm SiGe-BiCMOS

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bctm.2011.6082740 ◽

2011 ◽

Cited By ~ 1

Author(s):

Yi Zhao ◽

John R. Long ◽

Marco Spirito ◽

Atef B. Akhnoukh

Keyword(s):

Power Amplifier ◽

Sige Bicmos

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2011 IEEE Bipolar/BiCMOS Circuits and Technology MeetingLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Improving parasitic emitter resistance determination methods for advanced SiGe:C HBT transistors

A new technique for characterizing very low frequency noise of bipolar junction transistors

A Survey of Integrated RF Power Measurement and Control Components for Communications

Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations

Experimental extraction of the base resistance of SiGe:C HBTs beyond BVCEO: An improved technique

Influence of probe tip calibration on measurement accuracy of small-signal parameters of advanced BiCMOS HBTs

SiGe:C profile optimization for low noise performance

A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE

A fractional-N synthesizer for software-defined radio with reduced level of spurious tones

A +18dBm, 79–87.5GHz bandwidth power amplifier in 0.13µm SiGe-BiCMOS

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Latest Publications