NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits,
Latest Publications

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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Two-dimensional Tensor Temperature Extension of Hydrodynamic Model and Its Applications

NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, ◽

10.1109/nupad.1992.673850 ◽

2005 ◽

Author(s):

B. Pejtinovit ◽

H.K. Tang ◽

J.L. Egley ◽

L.R. Logan ◽

G.R. Srinivasan

Keyword(s):

Hydrodynamic Model ◽

Two Dimensional

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Analysis of Writing and Erasing Procedure of Flotox EEPROM Using the New Charge Balance Condition (CBC) Model

NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, ◽

10.1109/nupad.1992.673848 ◽

2005 ◽

Cited By ~ 2

Author(s):

S. Sugino ◽

N. Takakura ◽

Datong Chen ◽

R.W. Dutton

Keyword(s):

Charge Balance ◽

Balance Condition

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A New Methodology to Handle Mixed Circuit-Device Equations

NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, ◽

10.1109/nupad.1992.674107 ◽

2005 ◽

Cited By ~ 1

Author(s):

F. Gatti ◽

A. Gnudi ◽

G. Baccarani

Keyword(s):

Mixed Circuit

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Optimal Moving Meshes for Process and Device Simulations

NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, ◽

10.1109/nupad.1992.674102 ◽

2005 ◽

Cited By ~ 1

Author(s):

R.K. Smith ◽

R.E. Bank

Keyword(s):

Moving Meshes

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Modeling the Growth and Annealing of Dislocation Loops

NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, ◽

10.1109/nupad.1992.673842 ◽

2005 ◽

Cited By ~ 3

Author(s):

L. Borucki

Keyword(s):

Dislocation Loops

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A New Highly Efficient Nonlinear Relaxation Scheme for Hydrodynamic MOS Simulations

NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, ◽

10.1109/nupad.1992.674086 ◽

2005 ◽

Cited By ~ 6

Author(s):

B. Meinerzhagen ◽

K.H. Bach ◽

I. Bork ◽

W.L. Eng

Keyword(s):

Nonlinear Relaxation ◽

Highly Efficient ◽

Relaxation Scheme

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Hierarchical PDE Simulation of Nonequilibrium Transport Effects in Semiconductor Devices

NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, ◽

10.1109/nupad.1992.674097 ◽

2005 ◽

Cited By ~ 3

Author(s):

A. Benvenuti ◽

W.M. Coughran ◽

M.R. Pinto ◽

N.L. Schryer

Keyword(s):

Semiconductor Devices ◽

Nonequilibrium Transport ◽

Transport Effects

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A Monte Carlo MOSFET simulator based on a new method for the Poisson-transport iteration

NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, ◽

10.1109/nupad.1992.674090 ◽

2005 ◽

Author(s):

H. Kosina ◽

S. Selberherr

Keyword(s):

Monte Carlo ◽

New Method

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Automatic Numerical Evaluation of Derivatives and its use in Device Simulators

NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, ◽

10.1109/nupad.1992.674114 ◽

2005 ◽

Cited By ~ 3

Author(s):

E. Tijskens ◽

W. Schoenmaker ◽

K. De Meyer

Keyword(s):

Numerical Evaluation

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Solution of Hydrodynamic Device Model Using Multilevel Techniques

NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, ◽

10.1109/nupad.1992.674112 ◽

2005 ◽

Author(s):

A. Pardhanani ◽

G.F. Carey

Keyword(s):

Device Model

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NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits,Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Two-dimensional Tensor Temperature Extension of Hydrodynamic Model and Its Applications

Analysis of Writing and Erasing Procedure of Flotox EEPROM Using the New Charge Balance Condition (CBC) Model

A New Methodology to Handle Mixed Circuit-Device Equations

Optimal Moving Meshes for Process and Device Simulations

Modeling the Growth and Annealing of Dislocation Loops

A New Highly Efficient Nonlinear Relaxation Scheme for Hydrodynamic MOS Simulations

Hierarchical PDE Simulation of Nonequilibrium Transport Effects in Semiconductor Devices

A Monte Carlo MOSFET simulator based on a new method for the Poisson-transport iteration

Automatic Numerical Evaluation of Derivatives and its use in Device Simulators

Solution of Hydrodynamic Device Model Using Multilevel Techniques

NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits,
Latest Publications