2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

New Methodology for Series-Resistance-Immune MOSFET Parameter Extraction from Linear to Saturation Region

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/eurosoi-ulis45800.2019.9041901 ◽

2019 ◽

Author(s):

T. A. Karatsori ◽

K. Bennamane ◽

G. Ghibaudo

Keyword(s):

Series Resistance ◽

Parameter Extraction ◽

Saturation Region

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Thin Si channel Back Enhanced (BE) SOI pMOSFET Photodetector under different bias conditions

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/eurosoi-ulis45800.2019.9041870 ◽

2019 ◽

Author(s):

J.A. Padovese ◽

R.C. Rangel ◽

K.R.A. Sasaki ◽

J.A. Martino

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Optimization of GAA vertical nanowire performance for logic application

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/eurosoi-ulis45800.2019.9041873 ◽

2019 ◽

Author(s):

Terirama Thingujam ◽

Dong-Hyeok Son ◽

Jeong-Gil Kim ◽

Yong Soo Lee ◽

In Man Kang ◽

...

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Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/eurosoi-ulis45800.2019.9041904 ◽

2019 ◽

Author(s):

R. Lethiecq ◽

M. Bawedin ◽

P. Galy

Keyword(s):

Cmos Technology ◽

In Situ Heating ◽

Mos Device ◽

28 Nm ◽

Soi Cmos

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Modeling of the bridge threshold voltage in A2RAM cell

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/eurosoi-ulis45800.2019.9041917 ◽

2019 ◽

Author(s):

F. Tcheme Wakam ◽

J. Lacord ◽

M. Bawedin ◽

S. Martinie ◽

S. Cristoloveanu ◽

...

Keyword(s):

Threshold Voltage

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TCAD Analysis of III-V capacitor-less A2RAM cells

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/eurosoi-ulis45800.2019.9041874 ◽

2019 ◽

Author(s):

Carlos Navarro ◽

Santiago Navarro ◽

Carlos Marquez ◽

F. Gamiz

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Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/eurosoi-ulis45800.2019.9041920 ◽

2019 ◽

Author(s):

Roberto L. de Orio ◽

Alexander Makarov ◽

Siegfried Selberherr ◽

Wolfgang Goes ◽

Johannes Ender ◽

...

Keyword(s):

Magnetic Field ◽

Free Layer

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Simulation of Si nanowire quantum-dot devices for authentication

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/eurosoi-ulis45800.2019.9041864 ◽

2019 ◽

Author(s):

Hamilton Carrillo-Nunez ◽

Chen Wang ◽

Asen Asenov ◽

Robert Young ◽

Vihar Georgiev

Keyword(s):

Quantum Dot ◽

Si Nanowire

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Comparison of leakage currents in the power supply bulk and SOI transistors: calculations and experiment

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/eurosoi-ulis45800.2019.9041886 ◽

2019 ◽

Author(s):

Mikhail Ilnitsky ◽

Vladimir Vdovin ◽

Andrey Egorkin ◽

Valentin Antonov ◽

Ida Tyschenko ◽

...

Keyword(s):

Power Supply ◽

Leakage Currents

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Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/eurosoi-ulis45800.2019.9041910 ◽

2019 ◽

Author(s):

Mingshan Liu ◽

Konstantin Mertens ◽

Nils Von Den Driesch ◽

Thomas Grap ◽

Stefan Trellenkamp ◽

...

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2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

New Methodology for Series-Resistance-Immune MOSFET Parameter Extraction from Linear to Saturation Region

Thin Si channel Back Enhanced (BE) SOI pMOSFET Photodetector under different bias conditions

Optimization of GAA vertical nanowire performance for logic application

Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology

Modeling of the bridge threshold voltage in A2RAM cell

TCAD Analysis of III-V capacitor-less A2RAM cells

Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM

Simulation of Si nanowire quantum-dot devices for authentication

Comparison of leakage currents in the power supply bulk and SOI transistors: calculations and experiment

Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs

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2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

New Methodology for Series-Resistance-Immune MOSFET Parameter Extraction from Linear to Saturation Region

Thin Si channel Back Enhanced (BE) SOI pMOSFET Photodetector under different bias conditions

Optimization of GAA vertical nanowire performance for logic application

Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology

Modeling of the bridge threshold voltage in A2RAM cell

TCAD Analysis of III-V capacitor-less A2RAM cells

Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM

Simulation of Si nanowire quantum-dot devices for authentication

Comparison of leakage currents in the power supply bulk and SOI transistors: calculations and experiment

Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Latest Publications