2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)
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9781585371365

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2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.1109/eosesd.2007.4401724 ◽

2007 ◽

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T-diodes - a novel plug-and-play wideband RF circuit ESD protection methodology

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.1109/eosesd.2007.4401759 ◽

2007 ◽

Cited By ~ 13

Author(s):

D. Linten ◽

S. Thijs ◽

J. Borremans ◽

M. Dehan ◽

D. Tremouilles ◽

...

Keyword(s):

Plug And Play ◽

Esd Protection ◽

Rf Circuit

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Characterization and modeling methodology for IC’s ESD susceptibility at system level using VF-TLP tester

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.1109/eosesd.2007.4401767 ◽

2007 ◽

Cited By ~ 5

Author(s):

Nicolas Lacrampe ◽

Fabrice Caignet ◽

Marise Bafleur ◽

Nicolas Nolhier ◽

Nicolas Mauran

Keyword(s):

System Level ◽

Modeling Methodology

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Double well field effect diode: Lateral SCR-like device for ESD protection of I/Os in deep sub micron SOI

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.1109/eosesd.2007.4401750 ◽

2007 ◽

Cited By ~ 5

Author(s):

Akram A. Salman ◽

Stephen G. Beebe ◽

Mario M. Pelella

Keyword(s):

Field Effect ◽

Well Field ◽

Esd Protection

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Shielded cable discharge induces current on interior signal lines

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.1109/eosesd.2007.4401768 ◽

2007 ◽

Cited By ~ 5

Author(s):

Steven S. Poon ◽

Timothy J. Maloney

Keyword(s):

Shielded Cable

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Harmful voltage overshoots due to turn-on behaviour of ESD protections during fast transients

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.1109/eosesd.2007.4401774 ◽

2007 ◽

Cited By ~ 18

Author(s):

T. Smedes ◽

N. Guitard

Keyword(s):

Turn On ◽

Fast Transients

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A self protecting RF output with 2 kV HBM hardness

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.1109/eosesd.2007.4401726 ◽

2007 ◽

Cited By ~ 1

Author(s):

Gernot Langguth ◽

Timo Gossmann ◽

Stefan Rauch ◽

Bernd Kreppold ◽

Martin Wendel

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Simulation and physics of charged board model for ESD

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.1109/eosesd.2007.4401769 ◽

2007 ◽

Cited By ~ 8

Author(s):

Tuomas Reinvuo ◽

Timo Tarvainen ◽

Toni Viheriakoski

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Modeling of discharge between wire and GMR head

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.1109/eosesd.2007.4401743 ◽

2007 ◽

Author(s):

Yutaka Soda

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General Chair's welcome

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.1109/eosesd.2007.4401723 ◽

2007 ◽

Download Full-text

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Table of contents

T-diodes - a novel plug-and-play wideband RF circuit ESD protection methodology

Characterization and modeling methodology for IC’s ESD susceptibility at system level using VF-TLP tester

Double well field effect diode: Lateral SCR-like device for ESD protection of I/Os in deep sub micron SOI

Shielded cable discharge induces current on interior signal lines

Harmful voltage overshoots due to turn-on behaviour of ESD protections during fast transients

A self protecting RF output with 2 kV HBM hardness

Simulation and physics of charged board model for ESD

Modeling of discharge between wire and GMR head

General Chair's welcome

Export Citation Format

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Table of contents

T-diodes - a novel plug-and-play wideband RF circuit ESD protection methodology

Characterization and modeling methodology for IC’s ESD susceptibility at system level using VF-TLP tester

Double well field effect diode: Lateral SCR-like device for ESD protection of I/Os in deep sub micron SOI

Shielded cable discharge induces current on interior signal lines

Harmful voltage overshoots due to turn-on behaviour of ESD protections during fast transients

A self protecting RF output with 2 kV HBM hardness

Simulation and physics of charged board model for ESD

Modeling of discharge between wire and GMR head

General Chair's welcome

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)
Latest Publications