Emission-intensity-enhanced GaN-based LED based on multilayer grating structures

A novel surface-plasmon-enhanced GaN-LED is proposed to improve the emission efficiency of the traditional LED. The SiO2 film, Ag triangular structure and ITO film were coated on the rectangularly-patterned p-GaN layer sequentially, which can form the quasi-symmetrical waveguide structure to enhance the internal quantum efficiency and the light extraction efficiency. The COMSOL software is used to simulate the LED structure. The radiated powers, absorbed powers and distribution of electric field are obtained and analyzed. The results reveal that emission efficiency of the proposed GaN-LED can be greatly improved.