scholarly journals Emission-intensity-enhanced GaN-based LED based on multilayer grating structures

2021 ◽  
Vol 51 (4) ◽  
Author(s):  
Xin Li ◽  
Dejie Sun ◽  
Kun Han ◽  
Lijun Cao ◽  
Shiliang Guo ◽  
...  

A novel surface-plasmon-enhanced GaN-LED is proposed to improve the emission efficiency of the traditional LED. The SiO2 film, Ag triangular structure and ITO film were coated on the rectangularly-patterned p-GaN layer sequentially, which can form the quasi-symmetrical waveguide structure to enhance the internal quantum efficiency and the light extraction efficiency. The COMSOL software is used to simulate the LED structure. The radiated powers, absorbed powers and distribution of electric field are obtained and analyzed. The results reveal that emission efficiency of the proposed GaN-LED can be greatly improved.

2012 ◽  
Vol 32 (12) ◽  
pp. 1223001
Author(s):  
王晓民 Wang Xiaomin ◽  
李康 Li Kang ◽  
孔凡敏 Kong Fanmin ◽  
张振明 Zhang Zhenming ◽  
高晖 Gao Hui

2012 ◽  
Vol 27 (8) ◽  
pp. 082002 ◽  
Author(s):  
M Ali ◽  
O Svensk ◽  
L Riuttanen ◽  
M Kruse ◽  
S Suihkonen ◽  
...  

2007 ◽  
Vol 364-366 ◽  
pp. 98-103
Author(s):  
Paul C.P. Chao ◽  
Lun De Liao ◽  
Yi Hua Fan ◽  
Chien Yu Shen ◽  
Yung Yuan Kao ◽  
...  

Using TracePro® Monte-Carlo ray-tracing simulations, this paper investigates the improved light extraction efficiency (LEE) obtained by patterning the surface and/or substrate of GaN LEDs with unique three-dimensional micro-cavity patterns. The simulations commence by considering the case of a sapphire-based GaN LED. The effects on the LEE of the micro-cavity dimensions, the absorption coefficient of the active layer, the point source location, and the chip dimensions are systematically examined. Subsequently, the LEE performance of the sapphire-based GaN LED is compared with that of a thin-GaN LED for various surface texturing strategies. In general, the results show that patterning either the surface or the substrate of the LED structure provides an effective improvement in the LEE of both the sapphire-based GaN LED and the thin- GaN LED. For both LED structures, the maximum LEE enhancement is obtained by patterning both the upper surface of the LED and the substrate surface. However, the simulation results indicate that the improvement obtained in the LEE is the result primarily of pattering the upper surface of the LED.


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