Fast Non-Contact Dielectric Characterization for SiC MOS Processing

Non-contact corona-voltage metrology is utilized to characterize as-grown thermal oxide films on 4H SiC substrates. Contact potential difference mapping is coupled with incremental application of corona charge to provide whole-wafer images of process related effects and multiplepoint capacitance-voltage characteristics respectively. Correspondence between wafer VCPD images and process details is suggested along with examples of fast electrical dielectric thickness determination and non-contact C-V characteristic acquisition.

Oxide Mediated Epitaxy on Planar and Non-Planar Si

ABSTRACTThe recently developed oxide mediated epitaxy (OME) technique involves the growth of epitaxial CoSi2 through a thin layer of silicon oxide grown in peroxide baths. Here we report improvements of the OME technique from the use of in-situ grown thermal oxide as the barrier layer and post-growth oxygen anneals. Growth of uniform epitaxial CoSi2 layers by OME on non-planar surfaces of selectively deposited CVD Si layers with oxide and nitride patterns was also demonstrated. Both the epitaxial orientation of CoSi2 and the thickness of the CoSi2 layer, measured along the deposition direction, remained unchanged across facet boundaries. OME appears well suited for shallow-junction silicidation application in devices involving raised source/drain structures.

Formation and Passivation of New Paramagnetic Defects Associated With Thermal Oxides On Silicon

A new spin resonance spectrum has been observed with electron paramagnetic resonance in thermal oxides grown on (111) silicon. Our analysis indicates that this new spectrum consists of two isotropic resonances. One resonance has a g-value of 2.0026 and a linewidth (FWHM) of 1.2 G (labeled SL8); the other resonance has a g-value of 2.0029 and a linewidth (FWHM) of 5 G (labeled SL9). These spectra might be due to impurity contamination resulting from the oxidation process and associated with defects at interior surfaces. The SL8 resonance in particular appears to be located within the as-grown thermal oxide. The effects of 60Co gamma irradiation and annealing in either hydrogen or ammonia on these spectra are also presented in this paper.