Photo-Assisted Corona-Charge Characterization of Wide Bandgap Interfaces with Deep Traps Invisible in Standard C-V

Wide bandgap semiconductor technology has been generating a great deal of attention due to its fundamental advantages in high power electronics. Understanding and effective control of interfacial properties belong to a group of critical issues requiring progress. In this work, we report progress in wide bandgap interface characterization, achieved using photo-ionization of deep traps under a non-equilibrium condition created by corona-charge bias in deep depletion. This characterization capability is demonstrated on oxidized n-type epitaxial SiC with deep interfacial traps invisible in standard C-V. These traps, initially present at high density, are shown to be reduced by half after a wet anneal. The photo-ionization technique is incorporated in commercially available non-contact C-V (CnCV) metrology [1,2] providing a non-invasive, cost and time saving metrology that benefits development research as well as device fabrication.

Multifunctional polyethylene (PE)/polypropylene (PP) bicomponent fiber filter with anchored nanocrystalline MnO2 for effective air purification

A multifunctional composite filter combined with nanocrystalline MnO2 and a PE/PP bicomponent fiber by introducing corona charge technology has been fabricated and exhibited excellent filtration, adsorption and catalytic abilities in air pollutant abatement.

Corona charge regulation in nanoparticle electrophoresis

Nanoparticle (NP) size and charge play key roles in bioconjugation chemistry, imaging and drug delivery. Although the electrophoretic mobility and hydrodynamic size are routinely measured, interpreting these data can be extremely difficult. Here, the challenge is addressed via an electrokinetic model for spheres bearing a soft amphoteric corona, the charge of which is regulated by a multi-component electrolyte. The model is applied to NPs with a metallic core to which are grafted poly(ethylene glycol) chains with either weak acid or amphiprotic end groups. The results elucidate the separate roles of electrolyte pH and ionic strength on the electrophoretic mobility and diffusion coefficient. In this study, the forces were evaluated directly, rather than from the Stokeslet velocity disturbances. While the second-order convergence was demonstrated by both methods, the direct approach, which uses only the inner part of the global solution, furnished superior accuracy and robustness. This may benefit future attempts to model the dielectric and electroacoustic properties of these complex nanoparticulates.

Investigation of Parasitic Edge Recombination in High-Lifetime Oxidized n-Si

An investigation of the parasitic surface recombination mechanisms in high-lifetime oxidized n-Si is presented. An approximate analytical expression describing recombination at the edge of square shaped specimens is derived. This shows that edge recombination can have a significant effect on the effective lifetime as measured using the transient photo-conductance technique and that for well passivated high quality material edge recombination can be the dominant mechanism in reducing the effective lifetime below the intrinsic level. For 3 x 3 cm2 pieces of silicon measured using a Sinton photo-conductance lifetime instrument, it is shown that recombination at the edge of the sample results in an additional component to the measured lifetime of around 16 ms at an injection level of 1015 cm-3. When this effect is taken into account measurements of 1 Ωcm FZ-Si show that a SRV as low as 1.5 cm/s is possible when the surface is passivated using a corona charge concentration of +2.2 x 1012 q/cm2 deposited on a 100 nm oxide layer.