О возможности интерференции Рамсея в германии, легированном мелкими примесями

Dynamics of creation and distraction of coherent states resonantly excited by pair of laser pulses following each other with temporal delay in germanium crystal doped with shallow impurities has been theoretically considered. The power of excited radiation, lattice tempera-ture and limit permissible of inhomogeneous line broadening that necessary to observe of Ramsey interference in such system have been estimated.

Bound-exciton recombination in MgxZn1-xO thin films

Excitons in semiconductor alloys feel a random disorder potential leading to inhomogeneous line broadening and a lack of knowledge about the dominating recombination processes. Nevertheless, we demonstrate competing localization effects due to disorder (random potential fluctuations) and shallow point defects. We were able to spectrally separate donor-bound and quasi-free excitons within the whole wurtzite-type composition range of MgxZn1-xO (0 ≤ x ≤ 0.33) using spectrally resolved (x ≤ 0.06) and time-resolved photoluminescence (x ≥ 0.08). We found out that donor-bound excitons dominate photoluminescence spectra even for Mg-contents up to x = 0.18 and still appear for x = 0.33.