Separating Homogeneous and Inhomogeneous Line Widths of Heavy- and Light-Hole Excitons in Weakly Disordered Semiconductor Quantum Wells

2011 ◽  
Vol 115 (18) ◽  
pp. 5365-5371 ◽  
Author(s):  
Alan D. Bristow ◽  
Tianhao Zhang ◽  
Mark E. Siemens ◽  
Steven T. Cundiff ◽  
R. P. Mirin
Keyword(s):  
Quantum Wells ◽  
Light Hole ◽  
Semiconductor Quantum Wells ◽  
Line Widths ◽  
Inhomogeneous Line

Microcavities

2017 ◽  
Author(s):  
Alexey V. Kavokin ◽  
Jeremy J. Baumberg ◽  
Guillaume Malpuech ◽  
Fabrice P. Laussy
Keyword(s):  
Quantum Wells ◽  
Strong Light ◽  
Fundamental Physics ◽  
Postgraduate Students ◽  
Optical Cavities ◽  
Semiconductor Quantum Wells ◽  
Exciton Polaritons ◽  
Different Types ◽  
Potential Applications ◽  
Experimental Findings

Both rich fundamental physics of microcavities and their intriguing potential applications are addressed in this book, oriented to undergraduate and postgraduate students as well as to physicists and engineers. We describe the essential steps of development of the physics of microcavities in their chronological order. We show how different types of structures combining optical and electronic confinement have come into play and were used to realize first weak and later strong light–matter coupling regimes. We discuss photonic crystals, microspheres, pillars and other types of artificial optical cavities with embedded semiconductor quantum wells, wires and dots. We present the most striking experimental findings of the recent two decades in the optics of semiconductor quantum structures. We address the fundamental physics and applications of superposition light-matter quasiparticles: exciton-polaritons and describe the most essential phenomena of modern Polaritonics: Physics of the Liquid Light. The book is intended as a working manual for advanced or graduate students and new researchers in the field.

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Exchange splitting of light hole excitons in Al1−χGaχAs-GaAs quantum wells

1991 ◽  
Vol 80 (8) ◽  
pp. 553-556 ◽  
Author(s):  
Martin W. Berz ◽  
Lucio Claudio Andreani ◽  
Edgar F. Steigmeier ◽  
Franz-Karl Reinhart
Keyword(s):  
Quantum Wells ◽  
Light Hole ◽  
Exchange Splitting

Lateral-superlattice effects in very narrow strained semiconductor quantum wells grown on vicinal surfaces

1993 ◽  
Vol 47 (20) ◽  
pp. 13880-13883 ◽  
Author(s):  
F. Meseguer ◽  
F. Agulló-Rueda ◽  
C. López ◽  
J. Sánchez-Dehesa ◽  
J. Massies ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vicinal Surfaces ◽  
Semiconductor Quantum Wells
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