Nonlinear optical property measurements of rhenium diselenide used for ultrafast fiber laser mode-locking at 1.9 μm

An experimental investigation into the nonlinear optical properties of rhenium diselenide (ReSe2) was conducted at a wavelength of 1.9 μm using the open-aperture and closed-aperture Z-scan techniques for the nonlinear optical coefficient (β) and nonlinear refractive index (n2) of ReSe2, respectively. β and n2 measured at 1.9 μm were ~ − 11.3 × 103 cm/GW and ~ − 6.2 × 10–2 cm2/GW, respectively, which to the best of our knowledge, are the first reported measurements for ReSe2 in the 1.9-μm spectral region. The electronic band structures of both ReSe2 and its defective structures were also calculated via the Perdew–Becke–Erzenhof functional to better understand their absorption properties. A saturable absorber (SA) was subsequently fabricated to demonstrate the usefulness of ReSe2 for implementing a practical nonlinear optical device at 1.9 μm. The 1.9-μm SA exhibited a modulation depth of ~ 8% and saturation intensity of ~ 11.4 MW/cm2. The successful use of the ReSe2-based SA for mode-locking of a thulium–holmium (Tm–Ho) co-doped fiber ring cavity was achieved with output pulses of ~ 840 fs at 1927 nm. We believe that the mode-locking was achieved through a hybrid mechanism of saturable absorption and nonlinear polarization rotation.

High refractive index and extreme biaxial optical anisotropy of rhenium diselenide for applications in all-dielectric nanophotonics

We establish a simple quantitative criterium for the search of new dielectric materials with high values of refractive index in the visible range. It is demonstrated, that for light frequencies below the bandgap, the latter is determined by the dimensionless parameter η calculated as the ratio of the sum of the widths of conduction and valence bands and the bandgap. Small values of this parameter, which can be achieved in materials with almost flat bands, lead to dramatic increase of the refractive index. We illustrate this rule with a particular example of rhenium dichalcogenides, for which we perform ab initio calculations of the band structure and optical susceptibility and predict the values of the refractive index $n{ >}5$ in a wide frequency range around 1 eV together with comparatively low losses. Our findings open new perspectives in search for the new high-index/low-loss materials for all-dielectric nanophotonics.

Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode

The BP/h-BN/ReSe2 heterostructure demonstrates the highest tunneling-based rectification ratio and responsivity. The tunneling device operates in switching operation at up to GHz frequency.