gas precursor
Recently Published Documents


TOTAL DOCUMENTS

27
(FIVE YEARS 3)

H-INDEX

8
(FIVE YEARS 0)

ACS Nano ◽  
2021 ◽  
Author(s):  
Di Wang ◽  
Zhengwei Zhang ◽  
Bolong Huang ◽  
Hongmei Zhang ◽  
Ziwei Huang ◽  
...  

2021 ◽  
Author(s):  
Massimo Cuscunà ◽  
Mariachiara Manoccio ◽  
Marco Esposito ◽  
Mario Scuderi ◽  
Giuseppe Nicotra ◽  
...  

Core/shell nanohelices with VIS-CD are grown using FIBID, with the Ga+ source shaping the metallic core and the gas precursor the dielectric shell


2020 ◽  
Vol 54 (6) ◽  
pp. 647-650
Author(s):  
Koichiro Okuyama ◽  
◽  
Tadato Kido ◽  
Naohisa Miyakoshi ◽  
Yoichi Shimada ◽  
...  

Keyword(s):  

En este trabajo se produjeron películas de Carbono (C) sobre sustratos de acero D01 y acero D03. Las mismas fueron depositadas utilizando la técnica por haz de electrones empleando argón (Ar) como gas precursor y fueron caracterizadas a través de sus propiedades mecánicas y tribológicas. Se realizaron pruebas de: dureza, rugosidad y desgaste usando una punta piramidal tipo Berkovich para evaluar la dureza y una máquina tribológica de configuración pin sobre disco (pin-on-disc) para medir el desgaste. Se obtuvo la dureza de los recubrimientos, la cual varío respecto al sustrato utilizado, lo que originó un cambio en el coeficiente de fricción y desgaste. Un aumento considerable en la dureza permitió la disminución del coeficiente de fricción.


Author(s):  
Luong Thi Kim Phuong

To enhance the photoluminescence effeciency of the Ge film, we can apply a tensile strain or n doping in the Ge epilayers for modifying it’s energy band gap structure. In this work, we combine both electron doping method from Sb source and inducing a tensile strain in Ge films. Sb doped Ge grown on Si(100) substrate by molecular beam epitaxy technique. The dependence of photoluminescence intensity on the substrate temperature in the range of 130-240oC and on the Sb source temperature from 240 to 300oC are investigated. The active electron concentration obtained up to 2.5x1019cm-3. The tensile strain level in the Sb-doped Ge epilayers is twice larger than that of the P-doped Ge films using GaP solid source or PH3 gas precursor. These results are significant in the realization of the Si based photoelectronic devices which are compatible with mainstream CMOS technology.


Author(s):  
Carlos Alexander Lucho Constantino ◽  
Cristian Alain Briones Vázquez ◽  
María Guadalupe Moreno Bautista ◽  
Vivian Itzel Moreno Ramírez ◽  
Rosa Icela Beltrán Hernández
Keyword(s):  

El ozono (O3) se encuentra presente en distintas capas de la atmósfera: en la estratosfera, actúa como filtro de las radiaciones ultravioleta emitidas por el sol, mientras que en la troposfera es un contaminante dañino para los organismos vivos y también es un gas precursor de efecto invernadero. El objetivo de este estudio fue evaluar las variaciones horarias en la concentración de O3 en el municipio de Mineral de la Reforma, Hidalgo, para ello empleamos detectores colorimétricos preparados con una solución de almidón/KI. Los resultados obtenidos por la exposición de los detectores al O3 en la zona de estudio mostraron que la máxima concentración de este gas se presentó a las 12h00, con una temperatura promedio de 18.5°C y una humedad relativa entre 16 y 20%.


2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
A. Moreno-Bárcenas ◽  
J. F. Perez-Robles ◽  
Y. V. Vorobiev ◽  
N. Ornelas-Soto ◽  
A. Mexicano ◽  
...  

The present work shows a new method in order to cost-effectively achieve the synthesis of graphene by Chemical Vapor Deposition (CVD). Unlike most usual processes, where precursors such as argon, H2, CH4, and high purity copper foil are used, the proposed method has replaced the previous ones by N2, N2 (90%) : H2 (10%), C2H2, and electrolytic copper (technical grade) since the use of industrialized precursors helps reduce production costs. On the other hand, the process was modified from a continuous flow system with vacuum to a discontinuous one at atmospheric pressure, eliminating the use of vacuum pump. In addition, this modification optimized the consumption of gases, which reduced the waste and the emission of pollutant gases into the atmosphere. Graphene films were grown under different gas flowrates and temperatures. Then, the obtained material was characterized by TEM, Raman spectroscopy, and AFM, confirming the presence of few graphene layers. In brief, the growth time was reduced to six minutes with acetylene as a carbon precursor at 1000°C and at atmospheric pressure, with a flow rate of 30 sccm. Finally, the reported conditions can be used for the synthesis of good quality graphene films in industrial applications.


2017 ◽  
Vol 18 (6) ◽  
pp. 2120-2132 ◽  
Author(s):  
Alessandro Aiuppa ◽  
Marcello Bitetto ◽  
Vincenzo Francofonte ◽  
Gabriela Velasquez ◽  
Claudia Bucarey Parra ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document