Polarization Reversal Characteristics of Ferroelectric-Schottky Diode Hybrid Structure

The polarization reversal characteristics were measured by fabricating a device with top electrode/n-type semiconductor/ferroelectric/bottom electrode structure. It was observed that the hysteresis curves were changed according to the polarity of the applied voltage. When a positive voltage was applied, depolarization was hardly observed. However, a significant depolarization occurred when a negative voltage was applied. An attempt was made to set up an equivalent circuit using a Schottky diode to model the semiconductor-ferroelectric structure. This study is expected to be useful for setting protocol of electronic device composed of semiconductor-ferroelectric hybrid structure.

Применение сканирующей емкостной силовой микроскопии для выявления примесных фаз в сегнетоэлектрике триглицинсульфат

The results of the study of inhomogeneous ferroelectric triglycine sulfate single crystal with a growth periodic impurity structure TGS - TGS + Cr are presented. The impurity distribution was investigated with scanning capacitance force microscopy (SCFM). The peculiarities of the capacitance variations imaging on a doubled and tripled resonant frequency of electrostatic force are considered. The piezoelectric response, surface potential and surface topography were studied. It is shown that capacitive contrast is formed both at the domain boundaries and in the TGS and TGS + Cr bands. It was shown that SCFM allowed one to observe the impurity spatial distribution in the ferroelectric structure at the difference in the chromium concentration about 0.02-0.08 wt%.