thermal lattice expansion
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Author(s):  
Wojciech A. Sławiński ◽  
Hiroshi Okamoto ◽  
Helmer Fjellvåg

The quadruple perovskite BiMn7O12obtainedviahigh-pressure synthesis was investigated by high-resolution synchrotron X-ray powder diffraction over a temperature range of 10 to 295 K. Careful Rietveld analysis reveals triclinic lattice distortion of BiMn7O12at 295 K, which increases upon cooling to 10 K. Alsohkl-dependent anisotropic Bragg reflection shape was introduced to give a precise description of the diffracted intensities. Importantly BiMn7O12crystal structure was described in the non-centrosymmetricI1 triclinic space group. We also demonstrate the use of irreducible representations analysis (ISODISTORTprogram) for crystal structure distortion fromImtoI1 space group. The irreducible representation which describes crystal structure distortion points towards possible ferroelectricity. Finally anisotropic thermal lattice expansion was observed.


2017 ◽  
Vol 95 (5) ◽  
Author(s):  
Zhihua Dong ◽  
Wei Li ◽  
Dengfu Chen ◽  
Stephan Schönecker ◽  
Mujun Long ◽  
...  

2016 ◽  
Vol 93 (5) ◽  
Author(s):  
Vsevolod I. Razumovskiy ◽  
Andrei Reyes-Huamantinco ◽  
Peter Puschnig ◽  
A. V. Ruban

2013 ◽  
Vol 117 (36) ◽  
pp. 8770-8781 ◽  
Author(s):  
Arobendo Mondal ◽  
Mark Wijzenbroek ◽  
Matteo Bonfanti ◽  
Cristina Díaz ◽  
Geert-Jan Kroes

2000 ◽  
Vol 639 ◽  
Author(s):  
Jonathan M. Hayes ◽  
Martin Kuball ◽  
Ying Shi ◽  
James H. Edgar

ABSTRACTThe frequencies of the E2(high), A1(LO), A1(TO), E1(TO) and E1(LO) phonons of singlecrystalline bulk AlN were measured using micro-Raman spectroscopy over a temperature range from 10K to 1275K. A modeling of the temperature dependence of the AlN phonon frequencies considering the thermal lattice expansion and two-phonon decay mechanisms gave results in good agreement with the experimental data. At temperatures in excess of ∼300K an approximate linear shift of the phonon frequencies with temperature was found. In this high temperature regime, we determined a frequency shift of the E2(high) phonon of (-2.22 ± 0.02) ×10−2cm−1/K, which is very similar to values reported for bulk GaN. This suggests that similar parameters will be suitable for AlxGa1−xN alloys, commonly used in high-power high-frequency electronic devices. The results provide the basis for non-invasive local temperature monitoring in highpower III-nitride devices using micro-Raman scattering techniques.


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