Thermal Lattice Expansion Effect on Reactive Scattering of H2 from Cu(111) at Ts = 925 K

2013 ◽  
Vol 117 (36) ◽  
pp. 8770-8781 ◽  
Author(s):  
Arobendo Mondal ◽  
Mark Wijzenbroek ◽  
Matteo Bonfanti ◽  
Cristina Díaz ◽  
Geert-Jan Kroes
Keyword(s):  
Lattice Expansion ◽  
Reactive Scattering ◽  
Expansion Effect ◽  
Thermal Lattice Expansion

The thermal lattice expansion of calcium hydroxyapatite

1987 ◽  
Vol 80 (1) ◽  
pp. 149-154 ◽  
Author(s):  
W.G. Perdok ◽  
J. Christoffersen ◽  
J. Arends
Keyword(s):  
Calcium Hydroxyapatite ◽  
Lattice Expansion ◽  
Thermal Lattice Expansion

Effect of thermal lattice expansion on the stacking fault energies of fcc Fe andFe75Mn25alloy

2016 ◽  
Vol 93 (5) ◽  
Author(s):  
Vsevolod I. Razumovskiy ◽  
Andrei Reyes-Huamantinco ◽  
Peter Puschnig ◽  
A. V. Ruban
Keyword(s):  
Stacking Fault ◽  
Lattice Expansion ◽  
Thermal Lattice Expansion ◽  
Stacking Fault Energies

Raman Analysis of Single Crystalline Bulk Aluminum Nitride: Temperature Dependence of the Phonon Frequencies

2000 ◽  
Vol 639 ◽  
Author(s):  
Jonathan M. Hayes ◽  
Martin Kuball ◽  
Ying Shi ◽  
James H. Edgar
Keyword(s):  
Temperature Dependence ◽  
High Frequency ◽  
Electronic Devices ◽  
Lattice Expansion ◽  
Raman Analysis ◽  
Non Invasive ◽  
Micro Raman Spectroscopy ◽  
Bulk Gan ◽  
Thermal Lattice Expansion ◽  
Good Agreement

ABSTRACTThe frequencies of the E2(high), A1(LO), A1(TO), E1(TO) and E1(LO) phonons of singlecrystalline bulk AlN were measured using micro-Raman spectroscopy over a temperature range from 10K to 1275K. A modeling of the temperature dependence of the AlN phonon frequencies considering the thermal lattice expansion and two-phonon decay mechanisms gave results in good agreement with the experimental data. At temperatures in excess of ∼300K an approximate linear shift of the phonon frequencies with temperature was found. In this high temperature regime, we determined a frequency shift of the E2(high) phonon of (-2.22 ± 0.02) ×10−2cm−1/K, which is very similar to values reported for bulk GaN. This suggests that similar parameters will be suitable for AlxGa1−xN alloys, commonly used in high-power high-frequency electronic devices. The results provide the basis for non-invasive local temperature monitoring in highpower III-nitride devices using micro-Raman scattering techniques.

Longitudinal spin fluctuation contribution to thermal lattice expansion of paramagnetic Fe

2017 ◽  
Vol 95 (5) ◽  
Author(s):  
Zhihua Dong ◽  
Wei Li ◽  
Dengfu Chen ◽  
Stephan Schönecker ◽  
Mujun Long ◽  
...  
Keyword(s):  
Spin Fluctuation ◽  
Lattice Expansion ◽  
Longitudinal Spin ◽  
Thermal Lattice Expansion
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