radiation circuit
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MRS Bulletin ◽  
2003 ◽  
Vol 28 (2) ◽  
pp. 126-130 ◽  
Author(s):  
Kerry Bernstein

AbstractHistorically, radiation-induced corruption of data in high-speed complementary metal oxide semiconductor designs has been limited to on-board static random-access memory in various memory caches. Successive generations of scaling, however, have resulted in capacitance reductions in key logic circuits, increasing their vulnerability to these “soft errors.” Charge delivered by radiation events now carries a substantial probability of inducing upsets, not only in bistable elements, but in logic evaluation circuits as well. This article introduces the reader to common logic-circuit topologies in high-speed microprocessors, radiation circuit response mechanisms that can compromise logic evaluation integrity, and existing techniques that mitigate this exposure.


1970 ◽  
Vol 29 (1) ◽  
pp. 727-729 ◽  
Author(s):  
E. S. Sakharov ◽  
I. P. Chuchalin ◽  
A. G. Skorikov ◽  
R. I. Akimova ◽  
V. V. Karnaukhov

1965 ◽  
Vol 19 (2) ◽  
pp. 1068-1069
Author(s):  
G. I. Kiknadze ◽  
V. G. Gambaryan ◽  
B. I. Litvinov ◽  
R. B. Lyudvigov ◽  
Z. G. Razmadze ◽  
...  

1959 ◽  
Vol 7 (2) ◽  
pp. 166-167
Author(s):  
A.K. Breger ◽  
Y.S. Ryabukhin ◽  
S.G. Tulkes ◽  
E.N. Volkov

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