Room-temperature Coulomb oscillation of a proton dot in Ni–Nb–Zr–H glassy alloys with nanofarad capacitance

2009 ◽  
Vol 105 (6) ◽  
pp. 063715 ◽  
Author(s):  
Mikio Fukuhara ◽  
Akihisa Inoue
Keyword(s):  
Room Temperature ◽  
Glassy Alloys ◽  
Coulomb Oscillation

Superconductivity and Coulomb oscillation in Ni–Nb–Zr–H glassy alloys with nanoclusters

2010 ◽  
Vol 18 (10) ◽  
pp. 1864-1866 ◽  
Author(s):  
Mikio Fukuhara ◽  
Hajime Yoshida ◽  
Akihisa Inoue ◽  
Nobuhisa Fujima
Keyword(s):  
Glassy Alloys ◽  
Coulomb Oscillation

Investigation of Electrical Properties in Chalcogenide Thin Film According to Wave Length

2007 ◽  
Vol 31 ◽  
pp. 135-137
Author(s):  
H. Choi ◽  
H.K. Kim ◽  
Y.W. Koo ◽  
K.H. Nam ◽  
S.M. Koo ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Wave Length ◽  
Potential Candidate ◽  
Melt Quenching ◽  
Programmable Metallization Cell ◽  
Glassy Alloys ◽  
Electrochemical Control ◽  
Evaporation Technique ◽  
Chalcogenide Thin Film

Programmable metallization cell (PMC) memory is based on the electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte. We investigate the nature of thin films formed by the photo-dissolution of Ag into Ge-Se-Te glasses for use in programmable metallization cell devices. Glassy alloys of a-Ge25Se75-xTex(x = 0, 25) are prepared by well known melt-quenching technique. Thin films of a-Ge25Se75-xTex(x = 0, 25) glassy alloys are evaporated by vacuum evaporation technique at ~10-6 torr on glass substrate at room temperature. Optical properties in this study concerns photo-diffusion of Ag on Ag-doped Ge-Se-Te electrolytes. With these promising properties, the composition a-Ge25Se75-xTex(x = 0, 25) is recommended as a potential candidate for PMC-RAM.

ROOM-TEMPERATURE COULOMB OSCILLATION OF Ni–Nb–Zr–H GLASSY ALLOY

2010 ◽  
Vol 24 (22) ◽  
pp. 2289-2293 ◽  
Author(s):  
MIKIO FUKUHARA ◽  
RYO SATO ◽  
TETSU SUZUKI ◽  
AKIHISA INOUE
Keyword(s):  
Room Temperature ◽  
Field Effect Transistor ◽  
Glassy Alloy ◽  
Three Dimensional ◽  
Drain Current ◽  
Coulomb Oscillation ◽  
Drain Bias ◽  
Effect Transistor ◽  
Dc Current ◽  
Current Standards

The Ids–Vg characteristics of the aluminum-oxide glassy alloy ( Ni 0.36 Nb 0.24 Zr 0.40)90- H 10 field-effect transistor (GAFET) for gate–drain bias voltage from -50 to +50 μV were measured at room temperature. We observed four kinds of drain current oscillations for gate voltage at two-current plateau regions of -20~-15 and +35~+40 μV. The transistor showed the three-dimensional Coulomb diamond structure. From DC current standards I=ef, we get f=256 GHz for the first peak, being tunneling of one electron.

Evaluation of Room-Temperature Performance of Ultra-Small Single-Electron Transistor-Based Analog-to-Digital Convertors

2018 ◽  
Vol 27 (14) ◽  
pp. 1850217 ◽  
Author(s):  
Mostafa Miralaie ◽  
Ali Mir
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Periodic Oscillation ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Analog To Digital ◽  
Coulomb Oscillation ◽  
Temperature Operating ◽  
Coulomb Blockade Regime ◽  
Oscillation Characteristics

In this paper, in order to analyze the performance of single-electron transistor (SET)-based analog-to-digital converter (ADC) circuits at room temperature, first, the quantum Coulomb blockade regime is explained and based on it we calculate and discuss the inherent Coulomb oscillation characteristics of room-temperature-operating SETs (or, in other words, ultra-small SETs). Then, to explain the performance of SET-based ADC structures, we explore the sensitivity of converter section of these structures to the inherent periodic oscillation characteristics. By simulating two different temperatures of 100[Formula: see text]K and 300[Formula: see text]K, we demonstrate that for proper performance of converter section of the SET-based ADCs, SETs must have inherent Coulomb oscillations with the same and high peak-to-valley current ratio (PVCR) and equal Coulomb peak spacing (i.e., equal [Formula: see text]. The Coulomb oscillation characteristics of the room-temperature-operating silicon SET show the Coulomb oscillations with unequal PVCRs and unequal Coulomb peak spacings (i.e., unequal [Formula: see text]. As a result, it can be seen that the room-temperature-operating SET-based ADCs never have a suitable output.

ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A-Ge20Te80-xBix (x = 0, 1.5, 2.5, 5.0) THIN FILMS

2013 ◽  
Vol 22 ◽  
pp. 439-451
Author(s):  
AMBIKA SHARMA ◽  
KUMARI ANSHU ◽  
PREETI YADAV
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Life Time ◽  
Defect States ◽  
Temperature Dependent ◽  
Photoelectrical Properties ◽  
Glassy Alloys ◽  
Localized State ◽  
Evaporation Technique ◽  
Density Of Defect States

Bulk samples of Te-rich Ge20Te80-xBix (x = 0, 1.5, 2.5, 5.0) glassy alloys are prepared by melt quenching technique. The thin films of the bulk samples are deposited by using vacuum evaporation technique for their electrical and photoelectrical measurements. Keithley 6487 picoammeter has been used to study the electrical and photoelectrical characteristics of Ge20Te80-XBix thin films kept in vacuum. Temperature dependent dark and photoconductivity is studied in the temperature range 300-360 K and voltage V = 80V. Photoconductivity with intensity at room temperature follows a power law where power γ lies near to 0.5, suggesting that the recombination is bimolecular in nature. The density of defect states and photosensitivity are found to follow an opposite trend with each other. The differential life time is determined from the rise and decay of photocurrent w.r.t. time. The dispersion parameter and localized state distribution parameter are estimated from decay curves and reported for the studied composition.

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