Влияние связующего и красителей на механизм туннельной люминесепнции микрокристаллов AgBr(I)

It was previously found that in emulsion microcrystals (EMC) AgBr (I) (with silver content corresponding to pBr 4), the centers responsible for tunneling recombination at T = 77 K, with a maximum of luminescence at λmax~ 560 nm when excited from light from the absorption region of AgBr (I) EMCs (λ ~ 450 nm) as a result of temperature quenching, they undergo structural transformation into centers, which, under the same excitation, provide tunneling recombination with a wavelength depending on the binder: for EMC AgBr (I) obtained in water ‒ λmax~ 720 nm, in gelatin ‒ λmax~ 750 nm. In the present work, similar structural transformations of the centers determining tunneling recombination with λmax~ 560 nm, to the centers with luminescence on λmax~ 720 nm were implemented for AgBr (I) EMCs synthesized in polyvinyl alcohol (PVA) with an increase in the content of silver ions in the emulsion (from pBr 4 to 7). Responsible for this transformation, as follows from the obtained results, are mobile interstitial silver ions Agi +, which transform these tunnel recombination centers. The effect of the binder on the recombination processes in EMC AgBr (I) is manifested in changes in the kinetics of the increase in luminescence with λmax~ 560 nm upon excitation by light from the absorption region of AgBr (I) EMC (λ ~ 450 nm) to a stationary level. For a binder whose molecules do not interact with Ag centers Agin+, n = 1, 2 (water, PVA at pBr 4), increase in luminescence with λmax~ 560 nm occurs monotonically from zero to the maximum stationary level. For a binder (in our case, G is gelatin), whose molecules with centers Agin+ (n = 1,2) form complexes (Agin0G+), the kinetics of the increase in luminescence in EMC AgBr (I) to a stationary level at λmax~ 560 nm at pBr 4 is characterized by the presence of “flash flare”. Adsorption on the surface of EMC AgBr (I) (in PVA at pBr 7) of the dye is manifested as follows: if, before the introduction of the dye, the kinetics of the increase in luminescence with λmax~ 560 nm, when excited from light from the absorption region of AgBr (I) EMC (λ ~ 450 nm) to a stationary level, “flare-up” appeared, then after the introduction of the dye, the luminescence increases with λmax~ 560 nm occurs monotonically from zero to the maximum stationary level. Studies of the “flash” of luminescence stimulated by infrared (IR) light, after the termination of the action of exciting light, showed that when the kinetics of the increase in luminescence with λmax~ 560 nm to the stationary level, it exhibits "flare-up", a "flash" stimulated by IR light is not observed at λ ~ 560 nm. In the absence of “flash flare”, a “flash” at λ ~ 560 nm is observed. From our point of view, the results obtained indicate that “flare-up burning” is due to the presence of deep centers of electron localization with a small capture cross section, and not a photochemical reaction stimulated by exciting light. Key words: AgBr (I) microcrystals, emulsions, glow centers, luminescence flare-up.

Диоды Шоттки графит/p-SiC, полученные методом переноса нарисованной пленки графита на SiC

Graphite/ p -SiC Schottky diodes are fabricated using the recently suggested technique of transferring drawn graphite films onto p -SiC single-crystal substrates. The current–voltage and capacitance–voltage characteristics are measured at different temperatures and at different frequencies of a small-signal AC signal, respectively. The temperature dependences of the potential-barrier height and of the series resistance of the graphite/ p -SiC junctions are measured and analyzed. The dominant mechanisms of the charge–carrier transport through the diodes are determined. It is shown that the dominant mechanisms of the transport of charge carriers through the graphite/ p -Si Schottky diodes at a forward bias are multi-step tunneling recombination and tunneling described by the Newman formula (at high bias voltages). At reverse biases, the dominant mechanisms of charge transport are the Frenkel–Poole emission and tunneling. It is shown that the graphite/ p -SiC Schottky diodes can be used as detectors of ultraviolet radiation since they have the open-circuit voltage V _oc = 1.84 V and the short-circuit current density I _sc = 2.9 mA/cm^2 under illumination from a DRL 250-3 mercury–quartz lamp located 3 cm from the sample.

Synthesis of a Novel Structure Carbon Nanocoils and their Application in Photo Diode Devices

In this paper, the novel structure of carbon nanocoils were synthesized successfully by catalytic thermal decomposition of acetylene in CVD reactor under inert atmospheric pressure. Fe as a catalyst coated alumina beads used as substrate , both were placed inside a cylindrical shape stainless steel mesh SSC and located at the mid of CVD reactor. Preliminary study of application of prepared carbon nanocoil in synthesis of photodiode showed that the photodiode has a good rectification and the forward current obeys to tunneling-recombination model.