Efficiency degradation induced by surface defects-assisted tunneling recombination in GaN/InGaN micro-light-emitting diodes

2021 ◽  
Vol 118 (2) ◽  
pp. 021105
Author(s):  
Jian Yin ◽  
Ehsanollah Fathi ◽  
Hossein Zamani Siboni ◽  
Chao Xu ◽  
Dayan Ban
Keyword(s):  
Light Emitting Diodes ◽  
Surface Defects ◽  
Light Emitting ◽  
Tunneling Recombination ◽  
Assisted Tunneling

scholarly journals Phenylalkylammonium passivation enables perovskite light emitting diodes with record high-radiance operational lifetime: the chain length matters

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuwei Guo ◽  
Sofia Apergi ◽  
Nan Li ◽  
Mengyu Chen ◽  
Chunyang Yin ◽  
...  
Keyword(s):  
Chain Length ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Surface Defects ◽  
Theoretical Modelling ◽  
Ion Migration ◽  
Light Emitting ◽  
Operational Lifetime ◽  
Chain Lengths

AbstractPerovskite light emitting diodes suffer from poor operational stability, exhibiting a rapid decay of external quantum efficiency within minutes to hours after turn-on. To address this issue, we explore surface treatment of perovskite films with phenylalkylammonium iodide molecules of varying alkyl chain lengths. Combining experimental characterization and theoretical modelling, we show that these molecules stabilize the perovskite through suppression of iodide ion migration. The stabilization effect is enhanced with increasing chain length due to the stronger binding of the molecules with the perovskite surface, as well as the increased steric hindrance to reconfiguration for accommodating ion migration. The passivation also reduces the surface defects, resulting in a high radiance and delayed roll-off of external quantum efficiency. Using the optimized passivation molecule, phenylpropylammonium iodide, we achieve devices with an efficiency of 17.5%, a radiance of 1282.8 W sr−1 m−2 and a record T50 half-lifetime of 130 h under 100 mA cm−2.

scholarly journals Photon-assisted tunneling in GaN nanowire white light emitting diodes

2009 ◽  
Vol 6 (S2) ◽  
pp. S538-S540 ◽  
Author(s):  
P.-C. Yeh ◽  
M.-C. Hwa ◽  
J.-W. Yu ◽  
H.-M. Wu ◽  
H.-L. Tsai ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Gan Nanowire ◽  
Assisted Tunneling ◽  
White Light Emitting Diodes

Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes

2015 ◽  
Vol 14 (2) ◽  
pp. 444-455 ◽  
Author(s):  
Marco Mandurrino ◽  
Michele Goano ◽  
Marco Vallone ◽  
Francesco Bertazzi ◽  
Giovanni Ghione ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Self-Activated Green-Yellow Emitting Gd2CaZnO5 Phosphor for Efficient Ultra-Violet Light-Emitting Diodes

2020 ◽  
Vol 20 (6) ◽  
pp. 3754-3761 ◽  
Author(s):  
Naina Lohia ◽  
Savvi Mishra ◽  
Swati Bishnoi ◽  
G. Swati ◽  
Vishnu V. Jaiswal ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Surface Defects ◽  
Broad Band ◽  
Ultra Violet ◽  
Yellow Emission ◽  
Electromagnetic Spectrum ◽  
Light Emitting ◽  
Ultra Violet Light ◽  
Violet Light ◽  
High Temperature Xrd

A new self-activated green-yellow emitting Gd2CaZnO5 (GCZO) phosphor was synthesized using solid-state reaction method at high-temperature. XRD analysis confirmed the orthorhombic structure of the sample with the Pbnm space group. SEM micrographs reveal the irregular morphology with micron sized particles. Detailed photoluminescence (PL) analysis revealed that the excitation of the phosphor lies in the UV range (˜377 nm) with the related broad green-yellow emission centered at 530 nm. The broad band emission ranging from ˜450 nm to 650 nm can be attributed to the surface defects and oxygen vacancies. The calculated luminescence decay lifetime for the optimized phosphor was found to be 2.925 μs. Furthermore, the color-coordinate (x, y) were calculated and found to be (0.44, 0.45), which lies in the green-yellow (˜540 nm) region of the electromagnetic spectrum. The values of color coordinates and Color correlated temperature of 3289 K support the synthesized phosphor for the emission of warm white-light. These results perfectly established the suitability of this green-yellow emitting GCZO phosphor for Ultra-Violet Light-Emitting Diodes (LEDs) excited white-LED applications.

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes

2015 ◽  
Vol 212 (5) ◽  
pp. 947-953 ◽  
Author(s):  
Marco Mandurrino ◽  
Giovanni Verzellesi ◽  
Michele Goano ◽  
Marco Vallone ◽  
Francesco Bertazzi ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

2014 ◽  
Vol 105 (13) ◽  
pp. 133504 ◽  
Author(s):  
M. Auf der Maur ◽  
B. Galler ◽  
I. Pietzonka ◽  
M. Strassburg ◽  
H. Lugauer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling
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