Engineering of Electron Confinement through Defect‐Based Localized Polarization on SrTiO 3 Surface

2021 ◽  
pp. 2000968
Author(s):  
Junyan Chen ◽  
Wei Liu ◽  
Tobias Eul ◽  
Mingjing Chen ◽  
Xiaoyong Hu ◽  
...  
Keyword(s):  
1970 ◽  
Author(s):  
S. Aihara ◽  
M. Fujiwara ◽  
M. Hosokawa ◽  
H. Ikegami ◽  
Hugh C. Wolfe ◽  
...  

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.


2006 ◽  
Vol 99 (12) ◽  
pp. 126104 ◽  
Author(s):  
Isao Tomita ◽  
Akira Suzuki

2009 ◽  
Vol 16 (12) ◽  
pp. 123504 ◽  
Author(s):  
S. Y. Huang ◽  
A. Das Arulsamy ◽  
M. Xu ◽  
S. Xu ◽  
U. Cvelbar ◽  
...  

2020 ◽  
Vol 8 (31) ◽  
pp. 10551-10567 ◽  
Author(s):  
Chang Liu ◽  
Sergey A. Nikolaev ◽  
Wei Ren ◽  
Lee A. Burton

Electrides are systems in which an electron is not bound to an atom and plays an active role in the structure. The three types of electron confinement have been confirmed.


2015 ◽  
Vol 5 (2) ◽  
Author(s):  
Jaeyoung Park ◽  
Nicholas A. Krall ◽  
Paul E. Sieck ◽  
Dustin T. Offermann ◽  
Michael Skillicorn ◽  
...  

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