binary substrate
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2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shivangi Upadhyay ◽  
Alok Sinha

AbstractIn this study, a bacterial strain Serratia sp. was employed for the reduction of synthetically prepared different concentration of Cr(VI) solution (10, 25, 40, 50 and 100 mg/L). Cometabolism study have been carried out in the binary substrate system as well as in the tertiary substrate system. The results revealed that when glucose was added as a co-substrate, at low Cr(VI) concentration, complete reduction was achieved followed by increased biomass growth, but when Cr(VI) concentration was increased to 100 mg/L, the reduction decline to 93%. But in presence of high carbon iron filings (HCIF) as co-substrate even at higher Cr(VI) concentration i.e. 100 mg/L, 100% reduction was achieved and the cell growth continued till 124 h. The study was illustrated via Monod growth kinetic model for tertiary substrate system and the kinetic parameters revealed that the HCIF and glucose combination showed least inhibition to hexavalent chromium reduction by Serratia sp.


2019 ◽  
Vol 45 (9) ◽  
pp. 11287-11295 ◽  
Author(s):  
Ping Shen ◽  
Lifeng Zhang ◽  
Jianxun Fu ◽  
Hao Zhou ◽  
Yi Wang ◽  
...  

2014 ◽  
Vol 104 (6) ◽  
pp. 062103 ◽  
Author(s):  
Gang Wang ◽  
Da Chen ◽  
Zitong Lu ◽  
Qinglei Guo ◽  
Lin Ye ◽  
...  

2010 ◽  
Vol 22 (2) ◽  
pp. 409-419 ◽  
Author(s):  
Sumaya Ferreira Guedes ◽  
Benilde Mendes ◽  
Ana Lúcia Leitão

1989 ◽  
Vol 145 ◽  
Author(s):  
Allan E. Schultz ◽  
Y. Austin Chang

AbstractExtensive new data and modeling in the In-Ga-As system has allowed the authors to reexamine the phase equilibria between the melt and the epitaxial solid. A detailed thermodynamic model was constructed with the following improvements: (1) The solid-solid interaction parameters were based on InAs-GaAs miscibility gap data, and (2) liquid-bulk solid, as well as liquid-epitaxial solid, tie-lines were used. Comparison of tie- lines from epitaxial systems and bulk systems demonstrated that strain energy is not the dominant factor in equilibrium growth of epitaxial solid films of In1-xGaxAs on any Ill-V binary substrate. Both the “lattice- pulling” effect and the “substrate-orientation” effect were shown to be caused by different quaternary equilibria at the In1-xGaxAs/InP interface, and not by film-substrate strain.


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