Quaternary Phase Equilibria vs. Strain-Energy at the In.53Ga.47As/InP Interface

1989 ◽  
Vol 145 ◽  
Author(s):  
Allan E. Schultz ◽  
Y. Austin Chang
Keyword(s):  
Phase Equilibria ◽  
Strain Energy ◽  
Dominant Factor ◽  
Miscibility Gap ◽  
Bulk Solid ◽  
Tie Lines ◽  
Binary Substrate ◽  
Film Substrate ◽  
Gap Data ◽  
Quaternary Phase Equilibria

AbstractExtensive new data and modeling in the In-Ga-As system has allowed the authors to reexamine the phase equilibria between the melt and the epitaxial solid. A detailed thermodynamic model was constructed with the following improvements: (1) The solid-solid interaction parameters were based on InAs-GaAs miscibility gap data, and (2) liquid-bulk solid, as well as liquid-epitaxial solid, tie-lines were used. Comparison of tie- lines from epitaxial systems and bulk systems demonstrated that strain energy is not the dominant factor in equilibrium growth of epitaxial solid films of In1-xGaxAs on any Ill-V binary substrate. Both the “lattice- pulling” effect and the “substrate-orientation” effect were shown to be caused by different quaternary equilibria at the In1-xGaxAs/InP interface, and not by film-substrate strain.

Residual Stress, Fracture, and Adhesion in Sputter-Deposited Molybdenum Films

1988 ◽  
Vol 119 ◽  
Author(s):  
D. M. Mattox ◽  
R. E. Cuthrell
Keyword(s):  
Residual Stress ◽  
Strain Energy ◽  
Pressure Cycling ◽  
Stress Anisotropy ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Sputter Deposited ◽  
Film Substrate ◽  
Deposited Films ◽  
Deposition Conditions

AbstractAtomistically deposited films may form with high residual stresses which may be either tensile or compressive in nature. These film stresses represent stored strain energy which may affect the adhesion of the film-substrate couple and in the limit may cause spontaneous fracture at or near the film-substrate interface (loss of adhesion). In the post cathode magnetron sputter deposition of molybdenum films, we have found that the intrinsic film stresses are generally anisotropic and may easily exceed the fracture or adhesive strength of the film-substrate couple. The residual stress anisotropy in the film is dependent on the orientation with respect to the post cathode and the magnitude and nature of the stresses are very dependent on the deposition conditions, particularly gas pressure during sputtering. By using a pressure-cycling technique, we have deposited thick (5 microns) films of molybdenum which have little residual stress or stress anisotropy.

scholarly journals Subsolidus phase equilibria in the PbO-poor part of the TiO2–PbO–SiO2 system and its application in low-temperature thick-film dielectrics

2006 ◽  
Vol 21 (12) ◽  
pp. 3210-3214 ◽  
Author(s):  
Marko Hrovat ◽  
Thomas Maeder ◽  
Caroline Jacq ◽  
Janez Holc ◽  
Janez Bernard
Keyword(s):  
Particle Size ◽  
Low Temperature ◽  
Phase Equilibria ◽  
Thick Film ◽  
Crystalline Phase ◽  
Softening Point ◽  
Subsolidus Phase ◽  
Temperature Firing ◽  
Tie Lines ◽  
Kinetics Of

Subsolidus equilibria in the PbO-poor part of the TiO2–PbO–SiO2 diagram were studied with the aim of investigating possible applications for low-temperature thick-film dielectrics. The tie lines are between PbTiO2 and PbSiO3, and between PbTiO3 and SiO2. The results show that the TiO2, when added to low-temperature softening point glasses, reacts with the PbO from the glass, so forming PbTiO3. These results were applied to a low-temperature firing dielectric, consisting of a lead-rich PbO–SiO2–B2O3 glass filled with a TiO2 powder. The conversion of TiO2 to the PbTiO3 crystalline phase was observed above firing temperatures of approximately 600 °C. The kinetics of the reaction depend on the particle size of the TiO2.

scholarly journals Estimation of CE-CVM energy parameters from miscibility gap data

2005 ◽  
Vol 28 (2) ◽  
pp. 173-177 ◽  
Author(s):  
G. Srinivasa Gupta ◽  
G. Vamsi Madhav ◽  
A. Pandey ◽  
B. Nageswara Sarma ◽  
S. Lele
Keyword(s):  
Miscibility Gap ◽  
Energy Parameters ◽  
Gap Data

Energy Minimization During Epitaxial Grain Growth: Strain VS. Interfacial Energy

1993 ◽  
Vol 317 ◽  
Author(s):  
J. A. Floro ◽  
R. Carel ◽  
C. V. Thompson
Keyword(s):  
Grain Growth ◽  
Interfacial Energy ◽  
Energy Minimization ◽  
Strain Energy ◽  
Elastic Anisotropy ◽  
Interface Energy ◽  
Growth Strain ◽  
Free Energies ◽  
Film Substrate ◽  
Epitaxial Grain Growth

ABSTRACTWe have investigated Epitaxial Grain Growth (EGG) in polycrystalline Ag films on Ni (001) substrates. EGG is driven by minimization of crystallographically anisotropie free energies such as the film/substrate interfacial energy and the film strain. Under some conditions EGG results in the preferred growth of the (111) epitaxial orientations that are predicted to minimize the interfacial energy. However, when Ag films are deposited on Ni (001) at low temperature, EGG experiments consistently find that (111) oriented grains are consumed by grains with (001) orientations predicted to have much higher interface and surface energy. The large elastic anisotropy of Ag can account for this discrepancy. The film thickness and the deposition temperature (relative to the grain growth temperature) determine whether strain energy or interface energy minimization dominates orientation evolution during grain growth.

Quaternary Phase Equilibria in the Ti-Si-N-O System: Stability of Metallization Layers and Prediction of Thin Film Reactions

1989 ◽  
Vol 148 ◽  
Author(s):  
A.S. Bhansali ◽  
R. Sinclair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Diagram ◽  
Phase Equilibria ◽  
System Stability ◽  
Multicomponent Systems ◽  
Phase Rule ◽  
Quaternary Phase ◽  
Circuit Fabrication ◽  
Quaternary Phase Equilibria

ABSTRACTDuring high temperature circuit fabrication, metallization layers can come in contact with both solids and gases. Their stability can be addressed with the aid of phase equilibria. Using the Gibbs phase rule as a basis, a method for generating phase diagrams for multicomponent systems can be established. This procedure is described and illustrated by reference to the quaternary phase diagram of Ti-Si-N-O. This phase diagram can then be used to predict stability and/or reactions in metallization layers and thin films.

Practical Application of a Geometrically Nonlinear Stress-Curvature Relation

1991 ◽  
Vol 239 ◽  
Author(s):  
Christine B. Masters ◽  
N. J. Salamon
Keyword(s):  
Strain Energy ◽  
Film Stress ◽  
Silicon Substrates ◽  
Substrate Thickness ◽  
Geometrically Nonlinear ◽  
Practical Application ◽  
Total Strain Energy ◽  
Initial Film ◽  
Nonlinear Stress ◽  
Film Substrate

ABSTRACTA recently developed geometrically nonlinear stress-curvature relation based on a minimization of the total strain energy, which predicts a bifurcation in shape as the magnitude of intrinsic film stress increases, is discussed in this paper. It is compared with the linear theories of Stoney and Brenner & Senderoff for a thin molybdenum film on silicon substrates with various thicknesses. Although the ratio of film to substrate elastic modulus is only 2, Stoney's equation generates significant error for this film/substrate system and the Brenner & Senderoff relation should be used for calculating initial film stress when plate deflections are small. When deflections exceed approximately half the substrate thickness the Brenner & Senderoff equation produces over 10% error and consequently, the nonlinear stress-deflection relation should be used to relate plate curvatures to initial film stress.

Phase Equilibria and Lattice Parameters of Fe2Nb Laves Phase in Fe-Ni-Nb Ternary System at Elevated Temperatures

2004 ◽  
Vol 842 ◽  
Author(s):  
Masao Takeyama ◽  
Nobuyuki Gomi ◽  
Sumio Morita ◽  
Takashi Matsuo
Keyword(s):  
Ternary System ◽  
Phase Equilibria ◽  
Elevated Temperatures ◽  
Phase Region ◽  
Lattice Parameters ◽  
Laves Phase ◽  
Austenitic Steels ◽  
Dominant Factor ◽  
Two Phase ◽  
Ni Content

ABSTRACTPhase equilibria in Fe-Ni-Nb ternary system at elevated temperatures have been examined, in order to identify the two-phase region of γ-Fe (austenite) and ε-Fe2Nb (C14). The ε single phase region exists in the range of 27.5 to 35.5 at.% Nb in the Fe-Nb binary system, and it extends toward the equi-niobium concentration direction up to 44 at.% Ni in the ternary system at 1473 K, indicating that more than half of the Fe atoms in Fe2Nb can be replaced with Ni. Thus, the γ+ε two-phase region exists extensively, and the solubility of Nb in γ phase increases from 1.5 to 6.0 at.% with increase in Ni content. The lattice parameters of a and c in the C14 Laves phase decrease with increasing Ni content. The change in a axis is in good agreement with calculation based on Vegard's law, whereas that of c axis is much larger than the calculated value. The result suggests that atomic size effect is responsible for a-axis change and the binding energy is dominant factor for the c-axis change. To extend these findings to development of new class of austenitic steels strengthened by Laves phase, an attempt has been made to control the c/a ratio by alloying. The addition of Cr is effective to make the c/a ratio close to the cubic symmetry value (1.633).

scholarly journals Closed-Loop Miscibility Gap and Quantitative Tie-Lines in Ternary Membranes Containing Diphytanoyl PC

2006 ◽  
Vol 90 (12) ◽  
pp. 4428-4436 ◽  
Author(s):  
Sarah L. Veatch ◽  
Klaus Gawrisch ◽  
Sarah L. Keller
Keyword(s):  
Closed Loop ◽  
Miscibility Gap ◽  
Tie Lines
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