super acid
Recently Published Documents


TOTAL DOCUMENTS

164
(FIVE YEARS 6)

H-INDEX

18
(FIVE YEARS 0)

2021 ◽  
Author(s):  
Xiangxue Liu ◽  
Ke Wang ◽  
Baoquan Liu ◽  
Zhenmei Guo ◽  
Chao Zhang ◽  
...  
Keyword(s):  
One Step ◽  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhaojun Li ◽  
Hope Bretscher ◽  
Yunwei Zhang ◽  
Géraud Delport ◽  
James Xiao ◽  
...  

AbstractThere is a growing interest in obtaining high quality monolayer transition metal disulfides for optoelectronic applications. Surface treatments using a range of chemicals have proven effective to improve the photoluminescence yield of these materials. However, the underlying mechanism for the photoluminescence enhancement is not clear, which prevents a rational design of passivation strategies. Here, a simple and effective approach to significantly enhance the photoluminescence is demonstrated by using a family of cation donors, which we show to be much more effective than commonly used p-dopants. We develop a detailed mechanistic picture for the action of these cation donors and demonstrate that one of them, bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI), enhances the photoluminescence of both MoS2 and WS2 to a level double that of the currently best performing super-acid trifluoromethanesulfonimide (H-TFSI) treatment. In addition, the ionic salts used in our treatments are compatible with greener solvents and are easier to handle than super-acids, providing the possibility of performing treatments during device fabrication. This work sets up rational selection rules for ionic chemicals to passivate transition metal disulfides and increases their potential in practical optoelectronic applications.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Qi-Mian Koh ◽  
Cindy Guanyu Tang ◽  
Mervin Chun-Yi Ang ◽  
Kim-Kian Choo ◽  
Qiu-Jing Seah ◽  
...  

AbstractIt is widely thought that the water-oxidation reaction limits the maximum work function to about 5.25 eV for hole-doped semiconductors exposed to the ambient, constrained by the oxidation potential of air-saturated water. Here, we show that polymer organic semiconductors, when hole-doped, can show work functions up to 5.9 eV, and yet remain stable in the ambient. We further show that de-doping of the polymer is not determined by the oxidation of bulk water, as previously thought, due to its general absence, but by the counter-balancing anion and its ubiquitously hydrated complexes. The effective donor levels of these species, representing the edge of the ‘chemical’ density of states, can be depressed to about 6.0 eV below vacuum level. This can be achieved by raising the oxidation potential for hydronium generation, using large super-acid anions that are themselves also stable against oxidation. In this way, we demonstrate that poly(fluorene-alt-triarylamine) derivatives with tethered perfluoroalkyl-sulfonylimidosulfonyl anions can provide ambient solution-processability directly in the ultrahigh-workfunction hole-doped state to give films with good thermal stability. These results lay the path for design of soft materials for battery, bio-electronic and thermoelectric applications.


2021 ◽  
Vol 16 (4) ◽  
pp. 597-601
Author(s):  
Xiao-Dong Zhou ◽  
Er-Lei Wang ◽  
Hong-Lei Yuan ◽  
Yong-Mei Wang

Wearable strain sensor can be mounted on textiles and attached onto human skins to detect various mechanical motions and health conditions. Here, we report a sensitive and response-stable strain sensor based on the polymers consisting of the super acid-treated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and polydimethylsiloxane. The polymer-based strain sensor exhibits a high sensitivity of 26.6–30.6 and a stable response with a large sensing strain of up to 30% for a potential application.


2020 ◽  
Vol 158 ◽  
pp. 656-667 ◽  
Author(s):  
Sunita Singh ◽  
Deboshree Mukherjee ◽  
Srikanta Dinda ◽  
Subhas Ghosal ◽  
Jitamanyu Chakrabarty

2020 ◽  
Vol 63 (9) ◽  
pp. 1214-1220 ◽  
Author(s):  
Kebin An ◽  
Guohua Xie ◽  
Shaolong Gong ◽  
Zhanxiang Chen ◽  
Xiang Zhou ◽  
...  

2020 ◽  
Vol 4 (10) ◽  
pp. 1900136
Author(s):  
Xing Zhang ◽  
Hui Yan ◽  
Lingjun Zhu ◽  
Tian Li ◽  
Shurong Wang
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document