birefringence pattern
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Author(s):  
Marcelina Sobczak ◽  
Magdalena Asejczyk ◽  
Kamil Kalinowski ◽  
Barbara Pierścionek

2019 ◽  
Vol 36 (4) ◽  
pp. B23
Author(s):  
Marcelina Sobczak ◽  
Magdalena Asejczyk-Widlicka ◽  
Agnieszka Szafraniec ◽  
Piotr Kurzynowski

2019 ◽  
Vol 6 (1) ◽  
pp. 181215 ◽  
Author(s):  
Maria Raimo

Helical conformations and structures are frequently observed in materials. The presence of helices at points of the unit cell of a crystal, on a larger size scale in the crystalline lattice or even in the microscopic structure of crystals, affects the chemico-physical properties of a solid and, hence, also interactions with light. Here, attention has been drawn to the geometrical properties of helices produced by a hypothetical torque of a transparent crystal, and optical properties of twisted crystals easily observed by a polarizing microscope have been discussed. Radially grown spherulites are obtained by most substances crystallized from melt. The circular arrangement of elongated crystals reflects the optical behaviour of each crystal and, because of the larger dimensions of spherulites, allows investigations otherwise hardly feasible on separate crystals. According to the torsional analysis of elongated bodies and the birefringence theory, information on the existence of helically shaped crystals can be deduced, as hereinafter explained, from the microscopic appearance and birefringence pattern of spherulites. Indeed, twisting decreases the birefringence throughout an elongated crystal and, therefore, also the birefringence of spherulites formed by twisted radial crystals is reduced.


2017 ◽  
Vol 42 (2) ◽  
pp. 111
Author(s):  
Hyo Jin Ji ◽  
Se-Hee Park ◽  
Kyung-Mo Cho ◽  
Suk Keun Lee ◽  
Jin Woo Kim

2014 ◽  
Vol 93 (2) ◽  
pp. e105-e110 ◽  
Author(s):  
Harsha L. Rao ◽  
Ravi K. Yadav ◽  
Viquar U. Begum ◽  
Uday K. Addepalli ◽  
Sirisha Senthil ◽  
...  

2012 ◽  
Vol 717-720 ◽  
pp. 331-334
Author(s):  
Le Thi Mai Hoa ◽  
Thierry Ouisse ◽  
M. Seiss ◽  
Didier Chaussende

Using 6H SiC wafers including regions with a varying residual stress, the birefringence pattern of almost vertical dislocations is measured and modeled. We show that it is possible to identify the basal plane component of "small" dislocations by a quantitative fit of the birefringence pattern. Combining birefringence and etch pit detection after KOH etching shows that most of the vertical dislocations are of a mixed nature, exhibiting both an edge and a screw component.


2009 ◽  
Vol 93 (9) ◽  
pp. 1191-1194 ◽  
Author(s):  
K Qiu ◽  
C K S Leung ◽  
R N Weinreb ◽  
S Liu ◽  
C Y L Chueng ◽  
...  

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