A Hard Sphere Model for Bimolecular Recombination of Heavy Ions

We propose a hard sphere model of bimolecular recombination RM+ + X– → MX + R, where M+ is an alkali ion, X– is a halide ion, and R is a neutral rare gas or mercury atom. Calculations are carried out for M+ = Cs+, X– = Br–, R = Ar, Kr, Xe, Hg, for collision energies in the range from 1 to 10 eV, and for distributions of the RM+ complex internal energy corresponding to temperatures of 500, 1000, and 2000 K. The excitation functions and opacity functions of bimolecular recombination in the hard sphere approximation are found, and the classification of the collisions according to the sequences of pairwise encounters of the particles is considered. In more than half of all the cases, recombination occurs due to a single impact of the Br– ion with the R atom. For the recombination XeCs+ + Br–, the hard sphere model enables one to reproduce the most important characteristics of the collision energy dependence of the recombination probability obtained within the framework of quasiclassical trajectory calculations.

Light intensity dependence of organic solar cell operation and dominance switching between Shockley–Read–Hall and bimolecular recombination losses

We investigated the variation of current density–voltage (J–V) characteristics of an organic solar cell (OSC) in the dark and at 9 different light intensities ranging from 0.01 to 1 sun of the AM1.5G spectrum. All three conventional parameters, short-circuit currents (Jsc), open-circuit voltage (Voc), and Fill factor (FF), representing OSC performance evolved systematically in response to light intensity increase. Unlike Jsc that showed quasi-linear monotonic increase, Voc and FF showed distinctive non-monotonic variations. To elucidate the origin of such variations, we performed extensive simulation studies including Shockley–Read–Hall (SRH) recombination losses. Simulation results were sensitive to defect densities, and simultaneous agreement to 10 measured J–V curves was possible only with the defect density of $$5 \times 10^{12} {\text{ cm}}^{ - 3}$$ 5 × 10 12 cm - 3 . Based on analyses of simulation results, we were able to separate current losses into SRH- and bimolecular-recombination components and, moreover, identify that the competition between SRH- and bimolecular-loss currents were responsible for the aforementioned variations in Jsc, Voc, and FF. In particular, we verified that apparent demarcation in Voc, and FF variations, which seemed to appear at different light intensities, originated from the same mechanism of dominance switching between recombination losses.

Исследование кинетики гибели неравновесных носителей заряда в четверных соединениях меди Cu-=SUB=-2-delta-=/SUB=-NiSnS-=SUB=-4-=/SUB=- (0≤delta≤0.2)

By solid-phase synthesis from elemental Cu, Ni, Sn, and S samples Cu2 - δNiSnS4 was prepared . The parameters of their crystal lattice have been refined. The lifetimes of photogenerated current carriers in Cu2 - δNiSnS4 were estimated for the first time by the contactless time-resolved microwave photoconductivity method. This times turned out to be τ ≈ 7 ns, which is comparable with the literature data for the times in kesterites CZTS. Herewith, in kinetics of loses of photogenerated cureent carriers is observed predominance of bimolecular recombination processes over capture processes.

15.34% efficiency all-small-molecule organic solar cells with an improved fill factor enabled by a fullerene additive

A fullerene additive adjusts the miscibility between donor and acceptor for morphology optimization and reduces bimolecular recombination, assisting significant improvement of fill factor and efficiency.

Изменения фотоэлектрических свойств нелегированных пленок аморфного гидрированного кремния под влиянием предварительного освещения при повышенных температурах

The effect of preliminary weak illumination at elevated temperatures on the photoelectric properties of undoped α-Si:H films is investigated. It is found that the dark conductivity and photoconductivity of films increases with the preliminary-illumination intensity, and the parameter γ determining the dependence of the photoconductivity on the illumination intensity decreases due to an increasing fraction of the bimolecular recombination of electrons at energy levels of the tail of the density of states of the conduction band. It is assumed that this effect may be induced by the presence of an uncontrolled oxygen impurity and an increase in the concentration of electrically active oxygen as a result of preliminary illumination of the films at elevated temperatures.

Two-dimensional bimolecular recombination in amorphous organic semiconductors

Two-dimensional recombination in the spatially correlated random landscape demonstrates rich behavior depending on the disorder parameters and charge carrier density.

Light Intensity-dependent Variation in Defect Contributions to Charge Transport and Recombination in a Planar MAPbI3 Perovskite Solar Cell

We investigated operation of a planar MAPbI3 solar cell with respect to intensity variation ranging from 0.01 to 1 sun. Measured J-V curves consisted of space-charge-limited currents (SCLC) in a drift-dominant range and diode-like currents in a diffusion-dominant range. The variation of power-law exponent of SCLC showed that charge trapping by defects diminished as intensity increased, and that drift currents became eventually almost ohmic. Diode-like currents were analysed using a modified Shockley-equation model, the validity of which was confirmed by comparing measured and estimated open-circuit voltages. Intensity dependence of ideality factor led us to the conclusion that there were two other types of defects that contributed mostly as recombination centers. At low intensities, monomolecular recombination occurred due to one of these defects in addition to bimolecular recombination to result in the ideality factor of ~1.7. However, at high intensities, another type of defect not only took over monomolecular recombination, but also dominated bimolecular recombination to result in the ideality factor of ~2.0. These ideality-factor values were consistent with those representing the intensity dependence of loss-current ratio estimated by using a constant internal-quantum-efficiency approximation. The presence of multiple types of defects was corroborated by findings from equivalent-circuit analysis of impedance spectra.