Packaged nanoseconds photonic integrated switches for optical metro and datacenter interconnect systems

2021 ◽  
Author(s):  
Nicola Calabretta ◽  
Kristif Prifti ◽  
Netsanet Tessema ◽  
Aref Rasoulzadehzali ◽  
Ripalta Stabile
Keyword(s):  
Interconnect Systems

Reliability of commercial optical interconnect systems

1997 ◽  
Author(s):  
Nickolaos E. Strifas ◽  
Chandrasekhar Pusarla ◽  
Aristos Christou
Keyword(s):  
Optical Interconnect ◽  
Interconnect Systems

Measurement and interpretation of stress in copper films as a function of thermal history

1991 ◽  
Vol 6 (7) ◽  
pp. 1498-1501 ◽  
Author(s):  
Paul A. Flinn
Keyword(s):  
Mechanical Properties ◽  
Thermal Expansion ◽  
Elastic Modulus ◽  
Thermal History ◽  
Copper Films ◽  
Thermally Induced ◽  
Aluminum Films ◽  
Interconnection Material ◽  
Interconnect Systems

Since copper has some advantages relative to aluminum as an interconnection material, it is appropriate to investigate its mechanical properties in order to be prepared in advance for possible problems, such as the cracks and voids that have plagued aluminum interconnect systems. A model previously used to interpret the behavior of aluminum films proves to be, with minor modification, also applicable to copper. Although the thermal expansion of copper is closer to that of silicon and, consequently, the thermally induced strains are smaller, the much larger elastic modulus of copper results in substantially higher stresses. This has implications for the interaction of copper lines with dielectrics.

scholarly journals TRANSIENT RESPONSE OF A DISTRIBUTED RLC INTERCONNECT BASED ON DIRECT POLE EXTRACTION

2009 ◽  
Vol 18 (07) ◽  
pp. 1263-1285 ◽  
Author(s):  
GUOQING CHEN ◽  
EBY G. FRIEDMAN
Keyword(s):  
Closed Form ◽  
Transient Response ◽  
Transmission Lines ◽  
Average Error ◽  
Proposed Model ◽  
Newton Raphson ◽  
On Chip ◽  
Interconnect Systems ◽  
Interconnect System ◽  
Raphson Method

With higher operating frequencies, transmission lines are required to model global on-chip interconnects. In this paper, an accurate and efficient solution for the transient response at the far end of a transmission line based on a direct pole extraction of the system is proposed. Closed form expressions of the poles are developed for two special interconnect systems: an RC interconnect and an RLC interconnect with zero driver resistance. By performing a system conversion, the poles of an interconnect system with general circuit parameters are solved. The Newton–Raphson method is used to further improve the accuracy of the poles. Based on these poles, closed form expressions for the step and ramp response are determined. Higher accuracy can be obtained with additional pairs of poles. The computational complexity of the model is proportional to the number of pole pairs. With two pairs of poles, the average error of the 50% delay is 1% as compared with Spectre simulations. With ten pairs of poles, the average error of the 10%-to-90% rise time and the overshoots is 2% and 1.9%, respectively. Frequency dependent effects are also successfully included in the proposed method and excellent match is observed between the proposed model and Spectre simulations.

Mesoporous SiO2 as low-k dielectric for integration in Cu/low-k interconnect systems

2006 ◽  
Vol 18 (S1) ◽  
pp. 31-36
Author(s):  
Swantje Frühauf ◽  
Stefan E. Schulz ◽  
Thomas Gessner
Keyword(s):  
Mesoporous Sio2 ◽  
Interconnect Systems ◽  
Low K
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