stressed silicon
Recently Published Documents

TOTAL DOCUMENTS

51
(FIVE YEARS 0)

H-INDEX

11
(FIVE YEARS 0)
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Compressively Stressed Silicon Nanoclusters as an Antifracture Mechanism for High-Performance Lithium-Ion Battery Anodes

2020 ◽  
Vol 12 (35) ◽  
pp. 39195-39204
Author(s):  
Mohammed Salah ◽  
Colin Hall ◽  
Eva Alvarez de Eulate ◽  
Peter Murphy ◽  
Candice Francis ◽  
...  
Keyword(s):  
Lithium Ion Battery ◽  
High Performance ◽  
Lithium Ion ◽  
Silicon Nanoclusters ◽  
Stressed Silicon

scholarly journals Перестройка спектра терагерцового стимулированного излучения при внутрицентровом оптическом возбуждении одноосно-деформированного Si : Bi

2020 ◽  
Vol 54 (8) ◽  
pp. 816
Author(s):  
Р.Х. Жукавин ◽  
К.А. Ковалевский ◽  
С.Г. Павлов ◽  
N. Deb mann ◽  
A. Pohl ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Frequency Tuning ◽  
Stimulated Raman Scattering ◽  
Uniaxial Stress ◽  
Emission Lines ◽  
Terahertz Emission ◽  
Theoretical Investigations ◽  
Silicon Doped ◽  
Stimulated Raman ◽  
Stressed Silicon

The results of experimental and theoretical investigations dedicated to the uniaxial stress induced tuning of terahertz stimulated terahertz emission from silicon doped with bismuth under optical intracenter excitation. The frequency tuning of two emission lines from bismuth donor in silicon under uniaxial stress along [001] has been demonstrated in the experiments. The crosssections of stimulated Raman scattering for uniaxially stressed silicon doped with bismuth donors have been calculated.

Tunable Stokes Shift in Uniaxially Stressed Silicon with Shallow Donors

2019 ◽  
Author(s):  
Roman Kh. Zhukavin ◽  
Sergey G. Pavlov ◽  
Andreas Pohl ◽  
Nikolay V. Abrosimov ◽  
Helge Riemann ◽  
...  
Keyword(s):  
Stokes Shift ◽  
Shallow Donors ◽  
Stressed Silicon

Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

2016 ◽  
Vol 50 (11) ◽  
pp. 1458-1462
Author(s):  
R. Kh. Zhukavin ◽  
K. A. Kovalevsky ◽  
M. L. Orlov ◽  
V. V. Tsyplenkov ◽  
H.-W. Hübers ◽  
...  
Keyword(s):  
Absorption And Emission ◽  
Terahertz Absorption ◽  
Stressed Silicon

Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations

2016 ◽  
Vol 120 (5) ◽  
pp. 054502
Author(s):  
Geert Eneman ◽  
Philippe Roussel ◽  
David Paul Brunco ◽  
Nadine Collaert ◽  
Anda Mocuta ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Band Offsets ◽  
Stressed Silicon

On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon

2014 ◽  
Vol 48 (8) ◽  
pp. 1017-1022 ◽  
Author(s):  
V. V. Tsyplenkov ◽  
R. Kh. Zhukavin ◽  
V. N. Shastin
Keyword(s):  
Donor States ◽  
Stressed Silicon

Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

2014 ◽  
Vol 116 (4) ◽  
pp. 043506 ◽  
Author(s):  
F. Volpi ◽  
M. Braccini ◽  
A. Devos ◽  
G. Raymond ◽  
A. Pasturel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Mechanical Behaviour ◽  
Stressed Silicon

Ultraviolet photoluminescence from stressed silicon nanoclusters

2014 ◽  
Vol 115 (8) ◽  
pp. 083103 ◽  
Author(s):  
Gayatri Sahu ◽  
Vikas Sahu ◽  
L. M. Kukreja
Keyword(s):  
Silicon Nanoclusters ◽  
Stressed Silicon
Load More ...
Sign in / Sign up

Export Citation Format

Share Document