Raman Spectroscopy-Based Investigation of Thermal Conductivity of Stressed Silicon Microcantilevers

2015 ◽  
Vol 29 (4) ◽  
pp. 845-857 ◽  
Author(s):  
Ming Gan ◽  
Vikas Samvedi ◽  
Vikas Tomar
Keyword(s):  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Stressed Silicon

scholarly journals Study of anisotropic thermal conductivity in textured thermoelectric alloys by Raman spectroscopy

RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24456-24465
Author(s):  
Rapaka S. C. Bose ◽  
K. Ramesh
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Transport Properties ◽  
Thermal Transport ◽  
Layered Crystal ◽  
Layered Crystal Structure ◽  
Thermal Transport Properties ◽  
Anisotropic Thermal Conductivity ◽  
P Type

Polycrystalline p-type Sb1.5Bi0.5Te3 (SBT) and n-type Bi2Te2.7Se0.3 (BTS) compounds possessing layered crystal structure show anisotropic electronic and thermal transport properties.

scholarly journals Study of Thermometry in Two-Dimensional Sb2Te3 from Temperature-Dependent Raman Spectroscopy

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Manavendra P. Singh ◽  
Manab Mandal ◽  
K. Sethupathi ◽  
M. S. Ramachandra Rao ◽  
Pramoda K. Nayak
Keyword(s):  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Temperature Coefficient ◽  
Heat Dissipation ◽  
Peak Position ◽  
Two Dimensional ◽  
Phonon Modes ◽  
Temperature Dependent ◽  
Excellent Candidate ◽  
High Figure

AbstractDiscovery of two-dimensional (2D) topological insulators (TIs) demonstrates tremendous potential in the field of thermoelectric since the last decade. Here, we have synthesized 2D TI, Sb2Te3 of various thicknesses in the range 65–400 nm using mechanical exfoliation and studied temperature coefficient in the range 100–300 K using micro-Raman spectroscopy. The temperature dependence of the peak position and line width of phonon modes have been analyzed to determine the temperature coefficient, which is found to be in the order of 10–2 cm−1/K, and it decreases with a decrease in Sb2Te3 thickness. Such low-temperature coefficient would favor to achieve a high figure of merit (ZT) and pave the way to use this material as an excellent candidate for thermoelectric materials. We have estimated the thermal conductivity of Sb2Te3 flake with the thickness of 115 nm supported on 300-nm SiO2/Si substrate which is found to be ~ 10 W/m–K. The slightly higher thermal conductivity value suggests that the supporting substrate significantly affects the heat dissipation of the Sb2Te3 flake.

scholarly journals Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating

2010 ◽  
Vol 97 (26) ◽  
pp. 263107 ◽  
Author(s):  
Martin Soini ◽  
Ilaria Zardo ◽  
Emanuele Uccelli ◽  
Stefan Funk ◽  
Gregor Koblmüller ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Laser Heating ◽  
Micro Raman Spectroscopy ◽  
Gaas Nanowires

Thermal conductivity of mesoporous films measured by Raman spectroscopy

2014 ◽  
Vol 104 (16) ◽  
pp. 161907 ◽  
Author(s):  
B. Stoib ◽  
S. Filser ◽  
N. Petermann ◽  
H. Wiggers ◽  
M. Stutzmann ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Mesoporous Films

Thermal Conductivity of Boron Carbides

1987 ◽  
Vol 97 ◽  
Author(s):  
Marvin Moss
Keyword(s):  
Electron Microscopy ◽  
Thermal Conductivity ◽  
Scanning Electron Microscopy ◽  
Raman Spectroscopy ◽  
Temperature Dependence ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Theoretical Density ◽  
Increasing Temperature ◽  
Scanning Electron

ABSTRACTThe thermal conductivity, k, of boron carbides of various B/C ratios, two modes of preparation – hot pressed and carbothermic, and two isotopic variants of boron – 11B and normal boron 10.81B, was measured from 300 to 1023 K. The density and composition of the samples were reflected in the magnitude and temperature dependence of k, and were investigated further with scanning electron microscopy, Rutherford backscattering spectroscopy, and Raman spectroscopy. While lower than theoretical density in B4C reduces k, the characteristic monotonic decline of k with increasing temperature is retained. This k-vs.-T behavior distinguishes B4C from material with larger B/C ratios for which the temperature dependence is essentially nil.

Measurement of In-Plane Thermal Conductivity of Ultrathin Films Using Micro-Raman Spectroscopy

2014 ◽  
Vol 18 (2) ◽  
pp. 183-193 ◽  
Author(s):  
Zhe Luo ◽  
Han Liu ◽  
Bryan T. Spann ◽  
Yanhui Feng ◽  
Peide Ye ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Ultrathin Films ◽  
Micro Raman Spectroscopy
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