Detection of arsenic donor electrons using gate-pulse-induced spin-dependent recombination in silicon transistors

2021 ◽  
Vol 118 (26) ◽  
pp. 263504
Author(s):  
Masahiro Hori ◽  
Yukinori Ono
Keyword(s):  
Gate Pulse ◽  
Silicon Transistors

Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors

2004 ◽  
Vol 19 (7) ◽  
pp. 870-876 ◽  
Author(s):  
Bin B Jie ◽  
K F Lo ◽  
Elgin Quek ◽  
Sanford Chu ◽  
Chih-Tang Sah
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Silicon Transistors ◽  
Metal Oxide Silicon

One-dimensional Sub-threshold Channels In Nanoscale Triple-gate Silicon Transistors

2007 ◽  
Author(s):  
Gabri P. Lansbergen ◽  
Hermann Sellier ◽  
Jaap Caro ◽  
Nadine Collaert ◽  
Isabelle Ferain ◽  
...  
Keyword(s):  
One Dimensional ◽  
Silicon Transistors

Diffused Emitter and Base Silicon Transistors*

1956 ◽  
Vol 35 (1) ◽  
pp. 1-22 ◽  
Author(s):  
M. Tanenbaum ◽  
D. E. Thomas
Keyword(s):  
Silicon Transistors

scholarly journals A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Mingzhi Dai ◽  
Karim Khan ◽  
Shengnan Zhang ◽  
Kemin Jiang ◽  
Xingye Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Integrated Circuits ◽  
Direct Method ◽  
Temperature Dependent ◽  
Extrinsic Factors ◽  
Gate Pulse ◽  
Dual Gate ◽  
Pulse Spectroscopy ◽  
A Direct Method ◽  
Peak Value

Abstract Sub-gap density of states (DOS) is a key parameter to impact the electrical characteristics of semiconductor materials-based transistors in integrated circuits. Previously, spectroscopy methodologies for DOS extractions include the static methods, temperature dependent spectroscopy and photonic spectroscopy. However, they might involve lots of assumptions, calculations, temperature or optical impacts into the intrinsic distribution of DOS along the bandgap of the materials. A direct and simpler method is developed to extract the DOS distribution from amorphous oxide-based thin-film transistors (TFTs) based on Dual gate pulse spectroscopy (GPS), introducing less extrinsic factors such as temperature and laborious numerical mathematical analysis than conventional methods. From this direct measurement, the sub-gap DOS distribution shows a peak value on the band-gap edge and in the order of 1017–1021/(cm3·eV), which is consistent with the previous results. The results could be described with the model involving both Gaussian and exponential components. This tool is useful as a diagnostics for the electrical properties of oxide materials and this study will benefit their modeling and improvement of the electrical properties and thus broaden their applications.

Analysis of integrated thyristor switching-off by a reverse gate pulse current

2017 ◽  
Vol 62 (11) ◽  
pp. 1684-1688 ◽  
Author(s):  
I. V. Grekhov ◽  
A. G. Lyublinsky ◽  
E. M. Mikhailov ◽  
D. S. Poloskin ◽  
A. A. Skidanov
Keyword(s):  
Pulse Current ◽  
Gate Pulse

Active gate driving technique for series connecting SiC MOSFETs in the presence of gate pulse delay mismatch

2021 ◽  
pp. 1-1
Author(s):  
Vamshi Krishna Miryala ◽  
Saravanan Dhanasekaran ◽  
Ganesh P ◽  
Kamalesh Hatua ◽  
Subhashish Bhattacharya
Keyword(s):  
Pulse Delay ◽  
Gate Pulse ◽  
Gate Driving
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