Vertically Aligned Few-Layered Graphene-Based Non-Cryogenic Bolometer

In this study, we report the photoresponse of vertically aligned few-layered graphene (VAG) upon infra-red (IR) irradiation at room temperature. Four probe measurements showed the current–voltage (I–V) characteristic of electrical switching during pulsed IR irradiation. The photoresponse reported here for VAG was significantly higher than that reported for carbon nanotube (CNT) samples. Our investigation shows that such a photoresponse arose solely from the bolometric effect, where the conductivity changed with temperature. The resistance magnitude of the VAGs increased ~two fold for each 6 °C increase in temperature. Also, the Thermal Coefficient of Resistance (TCR) in this region was ~11%/K, which is the highest TCR value reported for any carbon nanomaterial.

Study on the Temperature Dependency Effect of Thermal Coefficient of Resistance in Amorphous Silicon for Uncooled Microbolometer Application

ABSTRACTIn this paper, we studied the temperature dependency effect of thermal coefficient of resistance (TCR) in amorphous silicon (a-Si) on the properties of uncooled microbolometer with a-Si as a resistance layer by simulation. The temperature of the microbolometer rises during the operation mainly due to the heat generated by Joule heating as well as IR radiation. Generally, the TCR of a-Si is treated as a constant for the simplicity but the absolute value of TCR has been reported to decrease as the temperature increases. Therefore, to improve the device characteristics, the effect of temperature dependency of TCR in a-Si should be considered carefully in the range of the operating temperature. The responsivities of microbolometer are simulated according to the width of the resistance layer (W) with TCR as a function of temperature, which shows that the optimal W condition is affected by the TCR value changed by the temperature.

Granular metal–carbon nanocomposites as piezoresistive sensor films – Part 1: Experimental results and morphology

We have produced granular films based on carbon and different transition metals by means of plasma deposition processes. Some of the films possess an increased strain sensitivity compared to metallic films. They respond to strain almost linearly with gauge factors of up to 30 if strained longitudinally, while in the transverse direction about half of the effect is still measured. In addition, the film's thermal coefficient of resistance is adjustable by the metal concentration. The influence of metal concentration was investigated for the elements Ni, Pd, Fe, Pt, W, and Cr, while the elements Co, Au, Ag, Al, Ti, and Cu were studied briefly. Only Ni and Pd have a pronounced strain sensitivity at 55 ± 5 at. % (atomic percent) of metal, among which Ni–C is far more stable. Two phases are identified by transmission electron microscopy and X-ray diffraction: metal-containing nanocolumns densely packed in a surrounding carbon phase. We differentiate three groups of metals, due to their respective affinity to carbon. It turns out that only nickel has the capability to bond and form a stable and closed encapsulation of GLC around each nanoparticle. In this structure, the electron transport is in part accomplished by tunneling processes across the basal planes of the graphitic encapsulation. Hence, we hold these tunneling processes responsible for the increased gauge factors of Ni–C composites. The other elements are unable to form graphitic encapsulations and thus do not exhibit elevated gauge factors.

Variations in Electric Switching and Transverse Resistance of GeTe/ Sb2Te3 Superlattices at Elevated Temperature Studied by Conductive Scanning Probe Microscopy

ABSTRACTTemperature-dependent variations in electric switching and transverse resistance of phase-change [(GeTe)2(Sb2Te3)]n (n=4 and 8) chalcogenide superlattice (CSL) films were studied using conductive scanning probe microscopy (SPM). Three temperature regions with different electric transport properties were recognized in point current-voltage (I-V) spectra and the surface potential maps measured with tantalum and platinum-coated SPM cantilevers. At around 80°C the switching voltage decreased abruptly from ∼2 V to 0.5 V and the thermal coefficient of resistance changes its sign, indicating different carrier transport mechanisms. The observed changes correlated with decrease in the surface potential by ∼150 meV from 25 to 150°C. The results were ascribed to an opening of the CSL electronic band gap near the Fermi energy caused by thermal stress, which led to the transition from a Dirac-like semimetal to a narrow-gap semiconductor.

Exploring the infrared-sensing properties of polymorphous silicon-germanium (pm-SixGey:H) thin films

In this work we have performed an exploratory study of the infrared (IR) sensing properties of polymorphous silicon–germanium (pm-SixGey:H) thin films. Our objective was to study the characteristics that are important parameters for infrared detection, as activation energy (Ea), thermal coefficient of resistance (TCR), room temperature conductivity (σRT), and responsivity to IR radiation. After characterization, our results demonstrated that pm-SiGe:H films have advantages over a-Si:H,B, pm-Si:H, and pm-Ge:H, because of the possibility to tailor its properties as σRT, Ea, and TCR, and moreover, the possibility to adjust those values for specific applications.

Uncooled microbolometers with hydrogenated amorphous germanium-silicon films: Different device configurations and improvements on the thermosensing films

ABSTRACTWe report our main results on the development of un-cooled microbolometers based on hydrogenated amorphous Germanium-Silicon (a-GexSiy:H) thermo-sensing films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). Our research has been conducted to improve both, the structure of the devices (pixels) and the performance characteristics of the amorphous Germanium-Silicon thermosensing films.Our motivation is to produce microbolometers with much better performance characteristics (larger thermal coefficient of resistance, larger conductivity and better stability) than those available in commercial microbolometer arrays, based on boron doped hydrogenated amorphous silicon (a-Si:H,B).As part of our latest research, we also report the study of what we believe is the next generation of thermosensing films based on Silicon and Geranium amorphous films with embedded nanocrystals in the amorphous matrix (polymorphous films). Those materials have several advantages over amorphous, as a lower defect density, better stability and better transport properties.

Fabrication and Characteristics of Micro Heaters Based on Polycrystalline 3C-SiC for High Temperature and Voltage

This paper describes fabrication and properties of polycrystalline 3C-SiC micro heaters built on AlN(0.1 μm)/3C-SiC(1.0 μm) suspended membranes using surface micromachining technology. 3C-SiC and AlN semiconductors which have a large energy band gap and very low lattice mismatch were used as sensors in harsh environment micro electromechanical system (MEMS) applications in this work. The 3C-SiC thin film was simultaneously used as a resistance of temperature detector (RTD) and micro heater for detecting heated temperature correctly. The thermal coefficient of resistance (TCR) of the implemented 3C-SiC RTD is about -5200 ppm/°C in the temperature range from 25°C to 50°C and -1040 ppm/°C at 500°C. The 3C-SiC micro heater generates about 500°C of heat at 10.3 mW. Moreover, 3C-SiC micro heaters stand at higher applied voltages than case of Pt micro heaters.

Un-cooled Micro-bolometer with Sandwiched Thermo-sensing Layer Based on Ge Films Deposited by Plasma

We have fabricated and studied an un-cooled micro-bolometer with thermo-sensing layer sandwiched between two electrodes. The micro-bolometer has “bridge” configuration to provide sufficient thermo isolation of the thermo-sensing layer and is made on the surface of silicon wafer by means of surface micro-machining technique. The support layer of SiN and thermo-sensing layer of a-Ge:H,F have been deposited by low frequency PE CVD. The active area of the thermo-sensing layer is Ab=70x66 μm2. Temperature dependence of conductivity σ(T), current-voltage characteristics I(U), spectral noise density and thermal response time have been measured to characterize operation and to determine main performance characteristics. Activation energy of the thermo-sensing layer was Ea=0.34 eV providing thermal coefficient of resistance α=0.043 K-1. Pixel resistance was in the range Rb=(1÷30)x105 Ohm. Current and voltage responsivities were in the range RI=0.3÷14 AW-1 and RU=(1÷2)x105 VW-1, respectively. The value of detectivity was in the range of D*=(1÷40)x108 cmHz1/2W-1 and response time was τ=100 μs. The characteristics obtained in this micro-bolometer with sandwiched thermo-sensing layer make it promising for further development.