Evaluation of Major and Environmentally Driven Genes for Resistance in Pakistani Wheat Landraces and their Prospected Potential against Yellow Rust

Yellow rust is caused by Pst (Puccinia striiformis tritici), the most devastating wheat disease with continuous challenge of emerging virulences breaking vertical resistance worldwide resulting in epidemics. Vertical resistance genes incorporation is sustainable, economical and environment-friendly approach to control rust diseases. Wheat landraces (WLR) acquired vertical resistance through long time exposure of host pathogen survival competition in specific area having unique agronomic traits, genetic base and resistance against biotic and abiotic agents can be exploitable commodity for future food production. Fifty Pakistani WLRs already with known vertical resistance were screened against 7 potential Pakistani Pst races at seedling stage under glasshouse conditions to postulate resistance genes. Resistance magnitude was compared among the landraces. Six genes Yr1, Yr8, Yr9, Yr43, Yr44, and YrTr1 were successfully postulated either singly or in combination along with unidentified genes in 45 landraces. Pakistani Pst races are avirulent to Yr5, Yr10, Yr15, Yr24, Yr32, YrSp and YrTye. Most frequently postulated genes are Yr44 found in 22 genotypes, YrTr1 in 21, Yr9 in 19, Yr43 in 18, Yr8 and Yr1 in 14 wheat landraces. Multiple Yr gene pyramiding was observed in (B-74, B-281, B-530) with the presence of Yr8, Yr9, Yr43, Yr44, and YrTr1 and single gene were postulated from 12 genotypes. WLRs (B-03, B-158, B-160, B-171) reaction was immune showing presence of novel Yr genes. Study provides information regarding yellow rust resistance genes originated independently against localized Pst races with desirable agronomic traits since long and can be option for food security in changing environmental challenges.

Characteristics of Zn1-xAlxO NR/ITO Composite Films Oriented Application for Optoelectronic Devices

The Zn1-xAlxO nanorod (NR) were grown on ITO substrates by a hydrothermal process. The influences of the Al doping concentration on the surface morphology, structural, optical, and electrical characteristics of the Zn1-xAlxO NR/ITO composite film were investigated in detail. The results indicated that characteristics of the Zn1-xAlxO NR/ITO composite film were strongly influenced by the Al doping concentration. Furthermore, the lowest vertical resistance of the Zn1-xAlxO NR can be obtained when x = 0.01 and it strongly reduces when the concentration of UV light illumination increases. This reduction follows an exponential decay with a decay rate of 4.35. This result shows good photoconductivity response of the Zn1-xAlxO NR/ITO composite film and its ability to apply for optoelectronic devices material.

Development of a Simple Hydroponic Assay to Study Vertical and Horizontal Resistance of Soybean and Pathotypes of Phytophthora sojae

Phytophthora root rot, caused by Phytophthora sojae, is one of the most damaging diseases of soybean and the introgression of Rps (Resistance to P. sojae) genes into elite soybean lines is arguably the best way to manage this disease. Current bioassays to phenotype the gene-for-gene relationship are hampered with respect to reproducibility and long-term stability of isolates, and do not accurately predict horizontal resistance individually. The aim of our study was to investigate a new way of phenotyping P. sojae isolates and vertical and horizontal resistance in soybean that relies on zoospores inoculated directly into a hydroponic system. Inoculation of P. sojae isolates against a set of eight differentials accurately and reproducibly identified pathotypes over a period of two years. When applied to test vertical resistance of soybean lines with known and unknown Rps genes, the bioassay relied on plant dry weight to correctly identify all genes. In addition, simultaneous inoculations of three P. sojae isolates, collectively carrying eight major virulence factors against 64 soybean lines with known and unknown levels of horizontal resistance, separated the plants into five distinct groups of root rot, allowing the discrimination of lines with various degrees of partial resistance. Based on those results, this bioassay offers several advantages in facilitating efforts in breeding soybean for P. sojae resistance and in identifying virulence factors in P. sojae.

Modeling the Load Test of Vertical Resistance of Pile

This paper deals with the modeling of the load test of vertical resistance of reinforced concrete piles. The pile is a part of a group of piles with reinforced concrete heads. The head is pressed with steel arches of a bridge on highway Jablonov - Studenec. Pile model is created in ANSYS with several models of foundation having properties found out from geotechnical survey. Finally some crucial results obtained from computer models are presented and compared with these obtained from experiment.

Interacción entre genotipos de frijol y aislamiento de Rhizoctonia solani Kuhn. heredabilidad de la resistencia a la mustia hilachosa Thanatephorus cucumeris (Frank) (Donk) en cuItivares y poblaciones F, y F2 de frijol común Phaseolus vulgaris L.

Meso-american and Andean eommon bean genotypes were inoeulated with mycellium of Thanatephorus cucumeris (Frank), Donk to determine: 1- The interaction among different isolations of Rhizoclonia solani, Kuhn and bean genotypes from two genetic pools, 2- the heritability of resistance to web-blight and 3- the existing genic completion between the meso-american and Andean pools, respeetively. The results found in this experiment were as follows : the strains vary depending of the origin site. Thus, the Dominican Republic and Colombian strains cause a lesser damage to the bean plants. The Panama # 1 isolation is moderately slow, and the Panama # 2 and Costa Rica caused the largest damage to the crop. The RS- 32-Cr strain was the most virulent of all. The heritabiJity shown by crossing was high which indieates that there is genic completion between the meso-ameriean and the Andean pools, respectively. The erossing of of AFR-251 x BAT-1155, in a direct and reciprocal way, showed differences in the F1 and the F2, indicating that the resistance to the disease is controlled by cytoplasmie genes as by nuclear genes. The type of resistance shown by the different evaluated crosses was horizontal and not vertical resistance.

Determination of Ultimate Pile Bearing Capacity from a Seismic Method of Shear Wave Velocity in Comparison with Conventional Methods

The seismic method in the ultimate bearing capacity of piles based on shear wave velocity measurement is a new technique in geotechnical engineering design. In this study, the value of shear wave velocity, Vs is being successfully used to formulate a theory to determine the ultimate bearing capacity of piles. This theory is adapted from the ultimate bearing capacity of shallow foundation proposed by Keceli. Keceli’s formula is adapted by equating the pile tip vertical resistance of the seismic formula to the end bearing capacity of the pile tip for each layer. The sum of half the vertical resistance of each layer is then equated to the total shaft resistance of the pile. The end tip is then added to the total shaft resistance to give the total ultimate pile bearing capacity of the pile. This study was conducted at three sites, two sites of residual soil located in Malaysia and one site of alluvial soil situated at Collierville, Tennessee, USA. The results of the adapted seismic formula were compared with the static pile bearing capacities calculated using conventional methods proposed by Meyerhof for the SPT-N values and the Schmertmann, Bustamante and Gianeslli method for the SCPTu values. The percentage error in the ultimate bearing capacity of the piles between the adapted seismic and the conventional methods for all the sites were found to be -4.77%, -3.01% and -0.93% at Hulu Langat, Mutiara Damansara and Collierville sites respectively.

GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications

ABSTRACTWe developed a new GaN on SiC growth method by metalorganic vapour phase epitaxy (MOVPE) using of a single 2-dimension-growth step. Prior to epitaxy, to inhibit pre-reaction of Si-face SiC substrate with TMGa and NH3, TMAl was flowed without NH3. 1.5 μm of undoped crack-free GaN was grown on 6H-SiC (Si-face). Without buffer layer, the vertical resistance of GaN/SiC structure was found to be around 82.1Ω as determined by I-V characteristic. Further reduction in vertical resistance is expected by growth of n-GaN (1.5μm)/SiC structure (300μm). We also expect a SiC-based GaN heterostructure vertical FET will achieve high power and high switching speed performance.