GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications

2015 ◽  
Vol 1736 ◽  
Author(s):  
Zheng Sun ◽  
Shigeyoshi Usami ◽  
Di Lu ◽  
Takahiro Ishii ◽  
Marc Olsson ◽  
...  
Keyword(s):  
High Power ◽  
Vapour Phase ◽  
Switching Speed ◽  
Vapour Phase Epitaxy ◽  
Growth Step ◽  
Vertical Resistance ◽  
Speed Performance ◽  
Growth Method ◽  
High Switching Speed ◽  
Gan Heterostructure

ABSTRACTWe developed a new GaN on SiC growth method by metalorganic vapour phase epitaxy (MOVPE) using of a single 2-dimension-growth step. Prior to epitaxy, to inhibit pre-reaction of Si-face SiC substrate with TMGa and NH3, TMAl was flowed without NH3. 1.5 μm of undoped crack-free GaN was grown on 6H-SiC (Si-face). Without buffer layer, the vertical resistance of GaN/SiC structure was found to be around 82.1Ω as determined by I-V characteristic. Further reduction in vertical resistance is expected by growth of n-GaN (1.5μm)/SiC structure (300μm). We also expect a SiC-based GaN heterostructure vertical FET will achieve high power and high switching speed performance.

HVPE-based orientation-patterned GaAs: added-value for non-linear applications.

2003 ◽  
Vol 799 ◽  
Author(s):  
Faye D. ◽  
Lallier E. ◽  
Grisard A. ◽  
Gérard B. ◽  
Gil-Lafon E.
Keyword(s):  
Frequency Conversion ◽  
Vapour Phase ◽  
Added Value ◽  
Optical Parametric Oscillators ◽  
Vapour Phase Epitaxy ◽  
Parametric Oscillators ◽  
Structure Thickness ◽  
Large Scope ◽  
Growth Method ◽  
Optical Applications

ABSTRACTA new route is presented for the development of Orientation-Patterned Gallium Arsenide (OP-GaAs) for both guided and non-guided optical applications. The method is based on the use of the near-equilibrium growth process HVPE (Hydride Vapour Phase Epitaxy) that enables thick, high quality and orientation-preserving regrowth over dimensions fully compatible with targeted applications. The control of the growth anisotropy permits to preserve the original periodic arrangement of the initial template so that OP-GaAs substrates can be fabricated with pattern width and structure thickness ranging respectively from 1.8 to 110μm and 20 to 500μm. Such a large scope of dimensions appears useful either for bulk structures such as Optical Parametric Oscillators (OPO) or telecommunication applications. As an example, we suggest that combining this growth method with mechano-chemical polishing process could decrease propagation losses on AlGaAs waveguide structures for frequency conversion in telecom bands.

Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed

2017 ◽  
Vol 897 ◽  
pp. 521-524 ◽  
Author(s):  
Q.J. Zhang ◽  
G. Wang ◽  
Charlotte Jonas ◽  
Craig Capell ◽  
Steve Pickle ◽  
...  
Keyword(s):  
Detailed Analysis ◽  
High Voltage ◽  
Dynamic Characteristics ◽  
High Power ◽  
Switching Speed ◽  
Static And Dynamic Characteristics ◽  
Medium Voltage ◽  
Fast Switching ◽  
High Switching Speed ◽  
Fast Switching Speed

Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2nd Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET development. A low specific on-resistance of 4.7 mΩ⋅cm2 has been achieved on 1700 V, 20 mΩ 4H-SiC DMOSFETs at 250°C based on a 3rd generation planar MOSFET platform, which is less than half of the resistance of the previous generation devices. A detailed analysis has been carried out with respect to the static and dynamic characteristics, third quadrant conduction, and body diode reverse recovery charge, etc.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Laser Silicon Interaction Study on Ring Oscillators to Establish Temperature Voltage Dependency Trends on 14 nm and Future FinFET Technologies

2017 ◽  
Author(s):  
Gaurav Mattey ◽  
Lava Ranganathan
Keyword(s):  
High Speed ◽  
Laser Frequency ◽  
Ring Oscillator ◽  
Switching Speed ◽  
Dual Nature ◽  
Voltage Imaging ◽  
Multiple Cores ◽  
Speed Performance ◽  
Self Test ◽  
Frequency Changes

Abstract Critical speed path analysis using Dynamic Laser Stimulation (DLS) technique has been an indispensable technology used in the Semiconductor IC industry for identifying process defects, design and layout issues that limit product speed performance. Primarily by injecting heat or injecting photocurrent in the active diffusion of the transistors, the laser either slows down or speeds up the switching speed of transistors, thereby affecting the overall speed performance of the chip and revealing the speed limiting/enhancing circuits. However, recently on Qualcomm Technologies’ 14nm FinFET technology SOC product, the 1340nm laser’s heating characteristic revealed a Vt (threshold voltage) improvement behavior at low operating voltages which helped identify process issues on multiple memory array blocks across multiple cores failing for MBIST (Memory Built-in Self-test). In this paper, we explore the innovative approach of using the laser to study Vt shifts in transistors due to process issues. We also study the laser silicon interactions through scanning the 1340nm thermal laser on silicon and observing frequency shifts in a high-speed Ring Oscillator (RO) on 16nm FinFET technology. This revealed the normal and reverse Temperature Dependency Gate voltages for 16nm FinFET, thereby illustrating the dual nature of stimulation (reducing mobility and improving Vt) from a thermal laser. Frequency mapping through Laser Voltage Imaging (LVI) was performed on the Ring Oscillator (RO) using the 1340nm thermal laser, while concurrently stimulating the transistors of the RO. Spatial distribution of stimulation was studied by observing the frequency changes on LVI.

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

scholarly journals Towards practical applications of quantum emitters in boron nitride

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Koperski ◽  
K. Pakuła ◽  
K. Nogajewski ◽  
A. K. Dąbrowska ◽  
M. Tokarczyk ◽  
...  
Keyword(s):  
Optical Properties ◽  
Boron Nitride ◽  
Vapour Phase ◽  
Emission Characteristics ◽  
Vapour Phase Epitaxy ◽  
Practical Applications ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Polydimethylsiloxane Films ◽  
Background Luminescence ◽  
Quantum Emitters

AbstractWe demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epitaxy are inspected. We observe that these specimens display an antibunching in the second-order correlation functions, if the broadband background luminescence is properly controlled. Furthermore, the feasibility to use flexible and transparent substrates to support hBN crystals that host quantum emitters is explored. We characterise hBN powders deposited onto polydimethylsiloxane films, which display quantum emission characteristics in ambient environmental conditions.

A memory nanodevice based on Zn-MOF-74: a molecular dynamics study

2020 ◽  
Vol 8 (5) ◽  
pp. 1567-1570 ◽  
Author(s):  
Mikhail Suyetin ◽  
Thomas Heine
Keyword(s):  
Molecular Dynamics ◽  
Electric Field ◽  
Memory Element ◽  
Switching Speed ◽  
High Switching Speed ◽  
Element Density

C60−@Zn-MOF-74 operated by an electric field exhibits a combined high switching speed of 27 GB s−1 and a high memory element density of 106 Tb per inch2.

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