small lattice mismatch
Recently Published Documents


TOTAL DOCUMENTS

5
(FIVE YEARS 0)

H-INDEX

2
(FIVE YEARS 0)

2019 ◽  
Vol 479 ◽  
pp. 930-941
Author(s):  
V.A. Kovalskiy ◽  
V.G. Eremenko ◽  
P.S. Vergeles ◽  
O.A. Soltanovich ◽  
I.I. Khodos ◽  
...  

2018 ◽  
Vol 6 (28) ◽  
pp. 13652-13660 ◽  
Author(s):  
Qiangqiang Meng ◽  
Jiale Ma ◽  
Yonghui Zhang ◽  
Zhen Li ◽  
Alice Hu ◽  
...  

Large charge transfer and small lattice mismatch are beneficial for second layer Na atom adsorption.


2011 ◽  
Vol 415-417 ◽  
pp. 756-759
Author(s):  
Tong Li ◽  
Yu Zhang ◽  
Xiao Chang Ni

La0.8Sr0.2MnO3 (LSMO) films with SrMnO3 (SMO) diffusion barrier layers were deposited on (100) Si substrates at 600oC by RF magnetron sputtering. From X-ray diffraction patterns (XRD), (110) peak of LSMO has been greatly enhanced in LSMO/SMO/Si, which may result from small lattice mismatch between SMO and LSMO Rutherford backscattering spectrometry spectra (RBS) measurements clearly show that there is a sharp interface between SMO and Si and small diffusion between LSMO and SMO after introducing SMO diffusion barrier layer. Small lattice mismatch is also considered to play an important role in deciding good interface quality. The current-voltage measurement shows a good rectifying property of LSMO/SMO/Si when the thickness of SMO is 50 nm. On further increasing SMO thickness, the junction currents are depressed at the same applied positive voltage. We attribute the results to the bigger junction resistance caused through introducing thicker barrier layer.


1991 ◽  
Vol 229 ◽  
Author(s):  
Craig Rottman

AbstractThe stability of semicoherent interfaces between two solids with small lattice mismatch is examined. I consider the cases in which the rotation θ between the two solids is both zero and small. The interface orientation, characterized by a single angle φ, is arbitrary. The interfaces are composed of regularly spaced misfit dislocations, steps, and lattice dislocations. For a wide range of φ, many flat interfaces are unstable with respect to breaking up into two interfaces of distinct orientations, one of which contains only one of the two types of dislocations possible.


Sign in / Sign up

Export Citation Format

Share Document