Theoretical investigation of zirconium carbide MXenes as prospective high capacity anode materials for Na-ion batteries

2018 ◽  
Vol 6 (28) ◽  
pp. 13652-13660 ◽  
Author(s):  
Qiangqiang Meng ◽  
Jiale Ma ◽  
Yonghui Zhang ◽  
Zhen Li ◽  
Alice Hu ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Theoretical Investigation ◽  
Anode Materials ◽  
Lattice Mismatch ◽  
High Capacity ◽  
Zirconium Carbide ◽  
Small Lattice Mismatch ◽  
Small Lattice ◽  
Large Charge

Large charge transfer and small lattice mismatch are beneficial for second layer Na atom adsorption.

Rectifying Property of the Heterojunction Composed of La0. 8Sr0.2MnO3 on Si with and without SrMnO3 Diffusion Barrier Layers

2011 ◽  
Vol 415-417 ◽  
pp. 756-759
Author(s):  
Tong Li ◽  
Yu Zhang ◽  
Xiao Chang Ni
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Lattice Mismatch ◽  
Rutherford Backscattering Spectrometry ◽  
Rf Magnetron Sputtering ◽  
Voltage Measurement ◽  
Small Diffusion ◽  
Barrier Layers ◽  
Small Lattice Mismatch ◽  
Small Lattice

La0.8Sr0.2MnO3 (LSMO) films with SrMnO3 (SMO) diffusion barrier layers were deposited on (100) Si substrates at 600oC by RF magnetron sputtering. From X-ray diffraction patterns (XRD), (110) peak of LSMO has been greatly enhanced in LSMO/SMO/Si, which may result from small lattice mismatch between SMO and LSMO Rutherford backscattering spectrometry spectra (RBS) measurements clearly show that there is a sharp interface between SMO and Si and small diffusion between LSMO and SMO after introducing SMO diffusion barrier layer. Small lattice mismatch is also considered to play an important role in deciding good interface quality. The current-voltage measurement shows a good rectifying property of LSMO/SMO/Si when the thickness of SMO is 50 nm. On further increasing SMO thickness, the junction currents are depressed at the same applied positive voltage. We attribute the results to the bigger junction resistance caused through introducing thicker barrier layer.

Morphological Stability of Semicoherent Solid-Solid Interfaces: a Simple Model

1991 ◽  
Vol 229 ◽  
Author(s):  
Craig Rottman
Keyword(s):  
Simple Model ◽  
Lattice Mismatch ◽  
Misfit Dislocations ◽  
Morphological Stability ◽  
Small Lattice Mismatch ◽  
Wide Range ◽  
Small Lattice ◽  
Interface Orientation ◽  
The Stability

AbstractThe stability of semicoherent interfaces between two solids with small lattice mismatch is examined. I consider the cases in which the rotation θ between the two solids is both zero and small. The interface orientation, characterized by a single angle φ, is arbitrary. The interfaces are composed of regularly spaced misfit dislocations, steps, and lattice dislocations. For a wide range of φ, many flat interfaces are unstable with respect to breaking up into two interfaces of distinct orientations, one of which contains only one of the two types of dislocations possible.

On the mechanism of cross-hatch pattern formation in heterostructures with a small lattice mismatch

2019 ◽  
Vol 479 ◽  
pp. 930-941
Author(s):  
V.A. Kovalskiy ◽  
V.G. Eremenko ◽  
P.S. Vergeles ◽  
O.A. Soltanovich ◽  
I.I. Khodos ◽  
...  
Keyword(s):  
Pattern Formation ◽  
Lattice Mismatch ◽  
Small Lattice Mismatch ◽  
Small Lattice

TEM study of Cosi2 formation via annealing of Co-Ti bilayers on Si

1995 ◽  
Vol 53 ◽  
pp. 464-465
Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier
Keyword(s):  
Thermal Instability ◽  
Lattice Mismatch ◽  
Field Effect Transistors ◽  
Contact Layer ◽  
Interface Roughness ◽  
Oxide Semiconductor ◽  
Surface Layers ◽  
Silicide Layer ◽  
Small Lattice ◽  
Buried Layers

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.

Enhanced performance of Mo2P monolayer as lithium-ion battery anode materials by carbon and nitrogen doping: a first principles study

2021 ◽  
Vol 23 (6) ◽  
pp. 4030-4038
Author(s):  
Xinghui Liu ◽  
Shiru Lin ◽  
Jian Gao ◽  
Hu Shi ◽  
Seong-Gon Kim ◽  
...  
Keyword(s):  
Lithium Ion Battery ◽  
First Principles ◽  
Energy Barrier ◽  
Anode Materials ◽  
Nitrogen Doping ◽  
High Capacity ◽  
Lithium Ion ◽  
Carbon And Nitrogen ◽  
Nitrogen Doped ◽  
Battery Anode

Simple carbon (nitrogen) doped Mo2P as promoting lithium-ion battery anode materials with extremely low energy barrier and high capacity.

Engineering flexible carbon nanofibers concatenated MOFs-derived hollow octahedral CoFe2O4 as anode materials for enhanced lithium storage

2021 ◽  
Author(s):  
Fangfang Xue ◽  
Yangyang Li ◽  
Chen Liu ◽  
Zhigang Zhang ◽  
Jun Lin ◽  
...  
Keyword(s):  
Mechanical Property ◽  
Anode Materials ◽  
Electrode Materials ◽  
Electronic Devices ◽  
High Capacity ◽  
Lithium Ion ◽  
Lithium Storage ◽  
Excellent Mechanical Property ◽  
Wearable Electronic ◽  
Wearable Electronic Devices

Constructing suitable electrode materials with high capacity and excellent mechanical property is indispensable for flexible lithium-ion batteries (LIBs) to satisfy the growing flexible and wearable electronic devices. Herein, a necklace-like...

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