forest dislocation
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2015 ◽  
Vol 821-823 ◽  
pp. 108-114 ◽  
Author(s):  
Hiroyoki Nagasawa ◽  
Ramya Gurunathan ◽  
Maki Suemitsu

Eelectrically active defects in 3C–SiC are investigated by considering the structures and interactions of planar defects. An anti-phase boundary (APB) largely degrades the blocking property of semiconductor devices due to its semimetallic nature. Although APBs can be eliminated by orienting the specific polar face of 3C-SiC along a particular direction, stacking faults (SFs) cannot be eliminated due to Shockley-type partial dislocation glide. SFs with Shockley-type partial dislocations form a trapezoidal plate which expands the Si-terminated surface with increasing 3C-SiC thickness. Although the density of SFs can be reduced by counter termination, specific cross-junctions between a pair of counter SFs forms a forest dislocation, and this is regarded as an electrically active defect. This paper proposes an effective way to suppress the forest dislocations and APBs which nucleate during 3C-SiC growth.


1965 ◽  
Vol 11 (111) ◽  
pp. 605-615 ◽  
Author(s):  
R. Bullough ◽  
J. V. Sharp

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