scholarly journals Defect characterization of UMG mc-Si solar cells using LBIC and luminescence imaging techniques

MRS Advances ◽  
2018 ◽  
Vol 3 (57-58) ◽  
pp. 3359-3365 ◽  
Author(s):  
L.A. Sánchez ◽  
A. Moretón ◽  
M. Guada ◽  
S. Rodríguez-Conde ◽  
O. Martínez ◽  
...  

ABSTRACTUpgraded metallurgical-grade silicon (UMG Si) solar cells with different ranges of efficiencies were characterized through electroluminescence imaging (ELi) and light-beam induced current (LBIC) measurements. The results showed a good correlation between the EL intensity and the efficiency of the solar cells. ELi images gave a bright contrast at the defects, grain boundaries and intragrain defects, and dark contrast inside the grain bodies. Metallic impurities are much more present in some cells due to the directional solidification of the Si ingot. Local short-circuit current mapping with LBIC measurements revealed a bright zone in the neighborhoods of the defects due to the depletion of impurities. Internal quantum efficiencies (IQE) and effective diffusion lengths (Leff) were calculated using different excitation wavelengths. High resolution LBIC measurements revealed micrometric clusters of impurities around intragrain defects.

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3397 ◽  
Author(s):  
Jong Lim ◽  
Woo Shin ◽  
Hyemi Hwang ◽  
Young-Chul Ju ◽  
Suk Ko ◽  
...  

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.


2014 ◽  
Vol 2014 ◽  
pp. 1-4
Author(s):  
Kuen-Hsien Wu ◽  
Chia-Chun Tang

Trenched electrodes were proposed to enhance the short-circuit current and conversion efficiency of polycrystalline-silicon (poly-Si) solar cells with nanoporous silicon (NPS) surface layers. NPS films that served as textured surface layers were firstly prepared on heavily doped p+-type (100) poly-Si wafers by anodic etching process. Interdigitated trenches were formed in the NPS layers by a reactive-ion-etch (RIE) process and Cr/Al double-layered metal was then deposited to fill the trenches and construct trenched-electrode-contacts (TEC’s). Cells with TEC structures (called “TEC cells”) obtained 5.5 times higher short-circuit current than that of cells with planar electrode contacts (called “non-TEC cells”). Most significantly, a TEC cell achieved 8 times higher conversion efficiency than that of a non-TEC cell. The enhanced short-circuit current and conversion efficiency in TEC cells were ascribed to the reduced overall series resistance of devices. In a TEC cell, trenched electrodes provided photocurrent flowing routes that directly access the poly-Si substrates without passing through the high resistive NPS layers. Therefore, the application of NPS surface layers with trenched electrodes is a novel approach to development of highly efficient poly-Si solar cells.


2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Minghua Li ◽  
Libin Zeng ◽  
Yifeng Chen ◽  
Lin Zhuang ◽  
Xuemeng Wang ◽  
...  

We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC) on acid textures to fabricate colored multicrystalline silicon (mc-Si) solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc) as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2thickness for the case of SiO2/SiNx:H (DARC) with fixed SiNx:H (refractive indexn=2.1at 633 nm, and thickness = 80 nm). The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam) evaporation to deposit a layer of SiO2over the standard SiNx:H for156×156 mm2mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm andI-Vmeasurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.


2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.


1994 ◽  
Vol 358 ◽  
Author(s):  
Gregory Sun ◽  
Yuxin Li ◽  
Yicheng Lu ◽  
Babar Khan ◽  
Gary S. Tompa

ABSTRACTObservation of light emission from porous Si has demonstrated that the optical properties of Si can be drastically altered by the quantum size effects. We have investigated the improvement of absorption properties of Si material by forming a porous Si layer. Shallow-junction commercial crystalline as well as polycrystalline Si solar cells without anti-reflective coatings have been processed into porous Si solar cells by a wet chemical etching technique. Our best results have demonstrated more than 15% improvement in short-circuit current with no change in open-circuit voltage. The performance of the porous Si solar cells has been found to be sensitive to the porous layer thickness. The efficiency can be reduced when the porous layer is relatively deep, presumably due to the penetration of pores through the shallow junction. We believe porous Si can be optimized for photovoltaic applications by properly controlling its porosity and thickness.


2016 ◽  
Vol 25 (01n02) ◽  
pp. 1640008
Author(s):  
R. Miyazawa ◽  
H. Wakabayashi ◽  
K. Tsutsui ◽  
H. Iwai ◽  
K. Kakushima

Photovoltaic characteristics of ultra-thin single crystalline Si solar cells with thicknesses ranging from 7.6 to 3.3 nm are presented. While the short-circuit current (ISC) AM1.5 illumination has shown a linear relationship with the volume of the Si layer, a gradual increase in the open-circuit voltage (VOC) with thinner Si layer has been confirmed, implying the bandgap enlargement of the Si layer due to quantum confinement. Spectral response measurement has revealed an increased optical bandgap of 1.3 eV for 3.3-nm-thick Si solar cells, which is wider than that of 7.6-nm-thick Si ones. Although some process related issues have become clear during the fabrication of solar cells, they can be utilized as top cells for tandem configurations, exceeding the limit of the bulk Si solar cells.


2014 ◽  
Vol 521 ◽  
pp. 52-55
Author(s):  
Chun Rong Xue ◽  
Yu Qin Gu ◽  
Ming Liang Deng

This work presents study of both the antireflection coatings on silicon solar cells and surface texture of silicon solar cell, with the aim to prepare high quality Si solar cells. Surface texturing, either in combination with an anti-reflection coating or by itself, can be used to minimize reflection, but the large reflection loss can be reduced significantly via a suitable anti-reflecting coatings. Significant improvement of the short circuit current after anti-reflecting coatings was observed. It is found that the currentvoltage characteristic with a double-layer anti-reflecting coatings is better than that with a single-layer anti-reflecting coatings. Depositing a multilayer on the textured surface reduces the large reflection loss significantly. The short circuit current of silicon solar cells has significant improvement after depositing anti-reflecting coatings on textured surface silicon, and it increases the efficiency of the Si solar cells.


Author(s):  
ANUBHAV GUPTA ◽  
PRAVEEN S ◽  
ABHISHEK KUMAR ◽  
PRIYANKA SHREE ◽  
SUCHANA MISHRA

Organic solar cells using P3HT: PCBM as an active layer on ITO coated glass substrates were fabricated and characterized. Different air annealing procedures and cathode materials were tried and the characteristics were compared with that of a standard thin film polycrystalline silicon solar cell. It was found that the sample prepared with post-deposition air annealing at 130 oC improves the open circuit voltage (Voc) considerably. Besides, short circuit current (Isc) and the efficiency (η) were highest for the sample with a non annealed active layer. Series resistance (Rs) for this sample was lowest, but 103 times higher than that of the silicon solar cell, which in turn may have reduced the efficiency value for the organic cell compared to silicon.


1986 ◽  
Vol 70 ◽  
Author(s):  
S. Yamazaki ◽  
M. Abe ◽  
S. Nagayama ◽  
K. Shibata ◽  
M. Susukida ◽  
...  

ABSTRACTPIN-structure small-area solar cells using a-Si have been frequently reported on, but only a few reports are available on the study of solar cells using a large-area (10-cm square) substrate, all with a resultant conversion efficiency of above 9.0 %[1,2]. Our study has been concentrated on solar cells using a batch of ten 10-cm square substrates with an average conversion efficiency of 9.5 % or more.As a result, without an anti-reflection coating on the surface of the glass substrate, the following values have been obtained: average conversion efficiency (EFF)=9.63 % (standard deviation of 0.195 %) -Open-circuit voltage (Voc)=12.668 V (standard deviation of 0.215 V) -Short-circuit current (Isc)=78.467 mA (standard deviation of 1.619 mA) -Fill factor (FF)=0.6672 (standard deviation of 0.009)The process, equipment and methods for measurements through which these results were obtained are described below.


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